MII 200-12 A4
MID 200-12 A4
MDI 200-12 A4
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
MII
3
I
C25
= 270 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.2 V
MID
3
MDI
3
1
2
3
11
10
9
8
8
9
1
1
8
9
1
11
10
2
11
10
2
2
E 72873
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C80
I
CM
t
SC
(SCSOA)
RBSOA
P
tot
T
J
T
stg
V
ISOL
50/60 Hz, RMS
t = 1 min
I
ISOL
£
1 mA
t=1s
Insulating material: Al
2
O
3
Mounting torque (module)
(teminals)
d
S
d
A
a
Weight
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Typical
Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 20 kW
Continuous
Transient
T
C
= 25°C
T
C
= 80°C
T
C
= 80°C, t
p
= 1 ms
V
GE
= ±15 V, V
CE
= V
CES
, T
J
= 125°C
R
G
= 6.8
W,
non repetitive
V
GE
= ±15 V, T
J
= 125°C, R
G
= 6.8
W
Clamped inductive load, L = 100
mH
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
270
180
360
10
I
CM
= 360
V
CEK
< V
CES
1130
150
-40 ... +150
4000
4800
2.25-2.75
20-25
2.5-3.7
22-33
10
9.6
50
250
8.8
V
V
V
V
A
A
A
ms
A
Advantages
W
q
Features
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
package with DCB ceramic base plate
isolation voltage 4800 V
UL registered E72873
q
q
q
q
q
q
q
q
q
q
q
q
°C
°C
V~
V~
Nm
lb.in.
Nm
lb.in.
mm
mm
m/s
2
g
oz.
q
space and weight savings
reduced protection circuits
Typical Applications
q
q
M
d
q
q
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
Data according to a single IGBT/FRED unless otherwise stated.
© 2000 IXYS All rights reserved
1-4
030
MII 200-12 A4
MID 200-12 A4
MDI 200-12 A4
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ. max.
1200
4.5
T
J
= 25°C
T
J
= 125°C
15
6.5
V
V
Dimensions in mm (1 mm = 0.0394")
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
R
thJC
R
thJS
V
GE
= 0 V
I
C
= 6 mA, V
CE
= V
GE
V
CE
= V
CES
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 150 A, V
GE
= 15 V
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
10 mA
mA
±700
nA
2.2
11
1.5
0.65
100
50
650
50
24.2
21
0.22
2.7
V
nF
nF
nF
ns
ns
ns
ns
mJ
mJ
Inductive load, T
J
= 125°C
I
C
= 150 A, V
GE
= ±15 V
V
CE
= 600 V, R
G
= 6.8
W
with heatsink compound
0.11 K/W
K/W
Equivalent Circuits for Simulation
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ. max.
2.2
1.8
2.5
1.9
300
200
125
200
0.45
V
V
A
A
A
ns
0.23 K/W
K/W
Conduction
V
F
I
F
I
RM
t
rr
R
thJC
R
thJS
I
F
= 150 A, V
GE
= 0 V,
I
F
= 150 A, V
GE
= 0 V, T
J
= 125°C
T
C
= 25°C
T
C
= 80°C
I
F
= 150 A, V
GE
= 0 V, -di
F
/dt = 1200 A/ms
T
J
= 125°C, V
R
= 600 V
with heatsink compound
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.5 V; R
0
= 7.0 mW
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.3 V; R
0
= 3.4 mW
Thermal Response
IGBT (typ.)
C
th1
= 0.40 J/K; R
th1
= 0.110 K/W
C
th2
= 0.93 J/K; R
th2
= 0.003 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.28 J/K; R
th1
= 0.226 K/W
C
th2
= 0.51 J/K; R
th2
= 0.005 K/W
© 2000 IXYS All rights reserved
2-4
MII 200-12 A4
MID 200-12 A4
MDI 200-12 A4
350
A
300
I
C
250
T
J
= 25°C
V
GE
=17V
15V
13V
11V
350
T
J
= 125°C
A
300
I
C
250
200
150
V
GE
=17V
15V
13V
11V
200
150
100
50
0
0.0
0.5
1.0
1.5
2.0
2.5
V
CE
9V
100
50
0
0.0
9V
3.0
V
0.5
1.0
1.5
2.0
2.5 3.0
V
CE
3.5
V
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
350
V
CE
= 20V
A
300
I
C
250
T
J
= 25°C
600
A
500
I
F
400
300
T
J
= 125°C
T
J
= 25°C
200
150
100
50
0
5
6
7
8
9
10
V
GE
200
100
0
11
V
0
1
2
V
F
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
100
20
V
V
GE
15
250
t
rr
V
CE
= 600V
I
C
= 150A
A
ns
80
I
RM
200
150
100
I
RM
T
J
= 125°C
V
R
= 600V
I
F
= 150A
200-12
t
rr
60
10
40
5
20
0
0
200
400
600
Q
G
50
0
0
800
nC
0
200
400
A/
m
600
800
s
-di/dt
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
© 2000 IXYS All rights reserved
3-4
MII 200-12 A4
MID 200-12 A4
MDI 200-12 A4
90
mJ
E
on
t
d(on)
t
r
120
ns
80
E
on
V
CE
= 600V
V
GE
= ±15V
80
mJ
t
E
off
60
t
d(off)
800
ns
600
t
E
off
400
V
CE
= 600V
V
GE
= ±15V
R
G
= 6.8
W
T
J
= 125°C
60
40
40
30
R
G
= 6.8
W
T
J
= 125°C
20
200
0
0
100
200
I
C
0
0
0
100
200
I
C
t
f
300 A
0
300
A
Fig. 7 Typ. turn on energy and switching
times versus collector current
50
mJ
200
ns
160
t
120
t
r
80
40
0
28
E
off
Fig. 8 Typ. turn off energy and switching
times versus collector current
50
mJ
40
30
20
10
0
0
4
8
12
16
R
G
t
f
2000
V
CE
= 600V
V
GE
= ±15V
I
C
= 150A
T
J
= 125°C
40
E
on
V
CE
= 600V
V
GE
= ±15V
I
C
= 150A
T
J
= 125°C
t
d(on)
E
on
t
d(off)
ns
1600
t
1200
800
400
0
30
20
10
0
0
4
8
12
16
R
G
E
off
20
24
W
20
24
W
28
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
400
A
I
CM
300
R
G
= 6.8
W
T
J
= 125°C
V
CEK
< V
CES
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
0.1
Z
thJC
0.01
0.001
0.0001
diode
IGBT
200
100
single pulse
200-12
0
0
200
400
600
800 1000 1200
V
V
CE
0.00001
0.00001 0.0001
0.001
0.01
t
0.1
s
1
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
© 2000 IXYS All rights reserved
4-4
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