• Load Switch, PA Switch and Battery Switch for Portable
Devices
S
1
S
2
1
S
1
2
G
1
D
1
D
1
6
5
1.60 mm
G
2
4
S
2
1.60 mm
D
2
3
D
2
Marking Code
DAX
Part # code
XXX
Lot Traceability
and Date code
G
1
G
2
D
1
Ordering Information:
SiB911DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
2
P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
Limit
- 20
±8
- 2.6
- 2.1
- 1.5
a, b
- 1.2
a, b
-5
- 2.6
- 0.9
a, b
3.1
2
1.1
a, b
0.7
a, b
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
A
Pulsed Drain Current
Continuous Source-Drain Diode Current
I
DM
I
S
Maximum Power Dissipation
P
D
T
J
, T
stg
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
Temperature)
c, d
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
a, e
t
≤
5s
Steady State
Symbol
R
thJA
R
thJC
Typical
90
32
Maximum
115
40
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See Solder Profile (
h
ttp://www.vishay.com/ppg?73257).
The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under Steady State conditions is 125 °C/W.
f. Based on T
C
= 25 °C.
Document Number: 74475
S-80515-Rev. B, 10-Mar-08
www.vishay.com
1
New Product
SiB911DK
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 1.4 A, di/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 1.4 A, V
GS
= 0 V
- 0.8
25
26
19
6
T
C
= 25 °C
- 2.6
5
- 1.2
50
50
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 7.1
Ω
I
D
≅
- 1.4 A, V
GEN
= - 8 V, R
g
= 1
Ω
V
DD
= - 10 V, R
L
= 7.1
Ω
I
D
≅
- 1.4 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= - 10 V, V
GS
= - 8 V, I
D
= - 1.7 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 1.7 A
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
115
30
20
2.6
1.6
0.3
0.5
7
12
45
10
31
3
25
10
10
20
70
15
50
10
40
15
15
ns
Ω
4.0
2.5
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 1.5 A
V
GS
= - 2.5 V, I
D
= - 1.2 A
V
GS
= - 1.8 V, I
D
= - 0.18 A
V
DS
= - 10 V, I
D
= - 1.5 A
5
0.242
0.345
0.455
3
0.295
0.420
0.560
S
Ω
- 0.4
- 20
- 19
1.9
-1
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74475
S-80515-Rev. B, 10-Mar-08
New Product
SiB911DK
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
5
V
GS
= 5 thru 3.5 V
3V
1.0
4
I
D
- Drain Current (A)
2.5 V
I
D
- Drain Current (A)
0.8
3
2V
2
1.5 V
1
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.6
0.4
T
C
= 125 °C
0.2
25 °C
- 55 °C
0.0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.8
200
Transfer Characteristics
0.7
R
DS(on)
- On-Resistance (Ω)
V
GS
= 1.8
V
C - Capacitance (pF)
160
V
GS
= 2.5
V
C
iss
120
0.6
0.5
80
C
oss
0.4
0.3
V
GS
= 4.5
V
40
C
rss
0.2
0
1
2
3
4
5
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
8
V
GS
- Gate-to-Source Voltage (V)
I
D
= 1.7 A
1.4
R
DS(on)
- On-Resistance
6
V
DS
= 10 V
1.6
Capacitance
V
GS
= 4.5
V,
2.5
V,
1.8
V;
I
D
= 1.5 A
(Normalized)
1.2
4
V
DS
= 16 V
1.0
2
0.8
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 74475
S-80515-Rev. B, 10-Mar-08
On-Resistance vs. Junction Temperature
www.vishay.com
3
New Product
SiB911DK
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
0.8
I
D
= 1.5 A
0.7
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.1
0
1
2
3
4
5
V
GS
- Gate-to-Source
Voltage
(V)
25 °C
125 °C
T
J
= 150 °C
1
T
J
= 25 °C
Soure-Drain Diode Forward Voltage
0.8
8
On-Resistance vs. Gate-to-Source Voltage
0.7
I
D
= 250
µA
Power (W)
6
V
GS(th)
(V)
0.6
4
0.5
2
0.4
0.3
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
10
Limited
by
R
DS(on)*
I
DM
Limited
Single Pulse Power, Junction-to-Ambient
I
D
- Drain Current (A)
100
µs
1
1 ms
10 ms
100 ms
1 s, 10 s
DC
BV
DSS
Limited
0.1
*
V
GS
1
10
100
0.1
T
A
= 25 °C
Single Pulse
0.01
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 74475
S-80515-Rev. B, 10-Mar-08
New Product
SiB911DK
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3.0
4
2.5
3
I
D
- Drain Current (A)
2.0
Power Dissipation (W)
0
25
50
75
100
125
150
1.5
2
1.0
1
0.5
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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