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MJD3055TF

产品描述Bipolar Transistors - BJT NPN Epitaxial Sil
产品类别分立半导体    晶体管   
文件大小163KB,共7页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
标准
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MJD3055TF概述

Bipolar Transistors - BJT NPN Epitaxial Sil

MJD3055TF规格参数

参数名称属性值
Brand NameFairchild Semiconductor
是否无铅不含铅
是否Rohs认证符合
厂商名称Fairchild
零件包装代码DPAK
包装说明SMALL OUTLINE, R-PSSO-G2
针数3
制造商包装代码3LD, TO-252, NOT COMPLIANT TO JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK)
Reach Compliance Codenot_compliant
ECCN代码EAR99
最大集电极电流 (IC)10 A
集电极-发射极最大电压60 V
配置SINGLE
最小直流电流增益 (hFE)5
JEDEC-95代码TO-252
JESD-30 代码R-PSSO-G2
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量2
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
最大功率耗散 (Abs)20 W
认证状态Not Qualified
表面贴装YES
端子面层Matte Tin (Sn)
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)2 MHz

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