IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BTA425Y-800CT
3Q Hi-Com Triac
23 June 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB)
internally insulated plastic package intended for use in circuits where high static and
dynamic dV/dt and high dI/dt can occur. This "series CT" triac will commutate the full
RMS current at the maximum rated junction temperature (T
j(max)
= 150 °C) without the
aid of a snubber. It is used in applications where "high junction operating temperature
capability" is required.
2. Features and benefits
•
•
•
•
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
2500 V RMS isolation voltage capability
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability
High voltage capability
High current capability
Less sensitive gate for high noise immunity
Internally insulated package
Internally isolated mounting base
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
•
•
•
•
Applications subject to high temperature
Heating controls
High power motor control
High power switching
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
T
j
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
junction temperature
Conditions
Min
-
-
-
Typ
-
-
-
Max
800
250
150
Unit
V
A
°C
Scan or click this QR code to view the latest information for this product
TO
-2
20A
B
NXP Semiconductors
BTA425Y-800CT
3Q Hi-Com Triac
Symbol
I
T(RMS)
Parameter
RMS on-state current
Conditions
full sine wave; T
mb
≤ 101 °C;
Fig. 1;
Fig. 2; Fig. 3
Min
-
Typ
-
Max
25
Unit
A
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
rate of change of
commutating current
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
dI
com
/dt
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 25 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
13
-
-
A/ms
1000
-
-
V/µs
-
-
35
mA
-
-
35
mA
-
-
35
mA
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78D)
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA425Y-800CT
TO-220AB
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220
Version
SOT78D
Type number
BTA425Y-800CT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
23 June 2014
2 / 12
NXP Semiconductors
BTA425Y-800CT
3Q Hi-Com Triac
7. Marking
Table 4.
Marking codes
Marking code
BTA425Y-800CT
Type number
BTA425Y-800CT
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 101 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
Conditions
Min
-
-
-
-
-
-
-
-
Max
800
25
250
275
312.5
100
2
5
0.5
150
150
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; sine-wave pulse
I
T
= 30 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
°C
over any 20 ms period
-
-40
-
BTA425Y-800CT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
23 June 2014
3 / 12
NXP Semiconductors
BTA425Y-800CT
3Q Hi-Com Triac
30
I
T(RMS)
(A)
20
aaa-012991
100
I
T(RMS)
(A)
80
aaa-012992
101 °C
60
40
10
20
0
-50
0
50
100
T
mb
(°C)
150
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
40
f = 50 Hz; T
mb
= 101 °C
RMS on-state current as a function of surge
duration; maximum values
aaa-012993
P
tot
(W)
30
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α =
180 °C
α
120 °C
90 °C
60 °C
30 °C
20
10
0
0
5
10
15
20
25
I
T(RMS)
(A)
30
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
BTA425Y-800CT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
23 June 2014
4 / 12
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
