VS-HFA70FA120
www.vishay.com
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 70 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• UL approved file E78996
SOT-227
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
V
R
V
F
(typical)
t
rr
(typical)
I
F(AV)
per module at T
C
Package
1200 V
2.3 V
51 ns
70 A at 94 °C
SOT-227
The dual diode series configuration (VS-HFA70FA120) is
used for output rectification or freewheeling/clamping
operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per leg
Single pulse forward current per leg
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage
temperature range
SYMBOL
V
R
I
F
I
FSM
P
D
V
ISOL
T
J
, T
Stg
T
C
= 110 °C
T
J
= 25 °C
T
C
= 110 °C
Any terminal to case, t = 1 min
TEST CONDITIONS
MAX.
1200
35
380
174
2500
-55 to +150
UNITS
V
A
W
V
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
= 100 μA
I
F
= 30 A
Forward voltage
V
FM
I
F
= 60 A
I
F
= 30 A, T
J
= 125 °C
I
F
= 60 A, T
J
= 125 °C
V
R
= V
R
rated
Reverse leakage current
I
RM
T
J
= 125 °C, V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
MIN.
1200
-
-
-
-
-
-
-
TYP.
-
2.30
2.89
2.14
2.82
1.2
1.0
2.7
MAX.
-
3.00
3.80
2.44
3.27
75
-
10
μA
mA
V
UNITS
Revision: 05-Jan-18
Document Number: 94289
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA70FA120
www.vishay.com
Vishay Semiconductors
SYMBOL
t
rr
TEST CONDITIONS
I
F
= 1 A; dI
F
/dt = 200 A/μs; V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
V
R
= 1200 V
I
F
= 50 A
dI
F
/dt = - 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
TYP.
51
134
204
12
18
790
1770
24
MAX.
-
-
-
-
-
-
-
-
A
nC
pF
ns
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Peak recovery current
Reverse recovery charge
Junction capacitance
I
RRM
Q
rr
C
T
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both legs conducting
Case to heatsink
Weight
Mounting torque
Case style
Torque to terminal
Torque to heatsink
SYMBOL
R
thJC
R
thCS
Flat, greased surface
TEST CONDITIONS
MIN.
-
-
-
-
-
-
TYP.
-
-
0.10
30
-
-
MAX.
0.46
0.23
-
-
1.1 (9.7)
SOT-227
g
Nm (lbf.in)
°C/W
UNITS
1.8 (15.9) Nm (lbf.in)
I
F
- Instantaneous Forward Current (A)
1000
10 000
T
J
= 150 °C
1000
T
J
= 125 °C
100
10
1
T
J
= 25 °C
0.1
0.01
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
200
400
600
800
1000
1200
100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
10
1
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg)
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 05-Jan-18
Document Number: 94289
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA70FA120
www.vishay.com
Vishay Semiconductors
1000
C
T
- Junction Capacitance (pF)
100
10
10
100
1000
10 000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
0.01
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
DC
P
DM
t
1
t
2
Single pulse
(thermal resistance)
0.001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
.
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
175
200
Allowable Case Temperature (°C)
Average Power Loss (W)
150
125
100
150
RMS Limit
100
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
0
DC
75
50
25
0
0
10
20
30
40
50
60
70
80
90
Square
wave (d = 0.5)
80 % rated V
R
applied
50
0
10
20
30
40
50
60
70
I
F
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature
vs. Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Losses Characteristics (Per Leg)
Revision: 05-Jan-18
Document Number: 94289
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA70FA120
www.vishay.com
Vishay Semiconductors
3000
V
R
= 200 V
I
F
= 50 A
2500
2000
I
F
= 30 A
V
R
= 200 V
250
I
F
= 50 A
200
125 °C
150
I
F
= 30 A
125 °C
Q
rr
(nC)
t
rr
(ns)
1500
1000
100
25 °C
25 °C
50
500
0
100
1000
100
1000
0
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
35
V
R
= 200 V
30
25
I
F
= 50 A
I
F
= 30 A
I
rr
(nC)
20
15
10
125 °C
25 °C
5
0
100
1000
dI
F
/dt (A/μs)
Fig. 9 - Typical Reverse Recovery Current vs. dI
F
/dt
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
Revision: 05-Jan-18
Document Number: 94289
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA70FA120
www.vishay.com
Vishay Semiconductors
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 11 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
HF
2
A
3
70
4
F
5
A
6
120
7
Vishay
Semiconductors
product
HEXFRED
®
family
Process designator (A = electron irradiated)
Current rating (70 = 70 A)
Circuit configuration (two
separate
diodes, parallel pin-out)
Package indicator (SOT-227
standard
insulated base)
Voltage rating (120 = 1200 V)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
Two separate diodes,
parallel pin-out
4
3
4
3
F
1
2
1
2
LINKS TO RELATED DOCUMENTS
Dimensions
Packaging information
www.vishay.com/doc?95423
www.vishay.com/doc?95425
Revision: 05-Jan-18
Document Number: 94289
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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