This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD50N02-06P
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State
Resistance
b
Symbol
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 20 A
Min.
20
0.8
Typ.
a
Max.
Unit
3
± 100
1
50
0.0046
0.0073
0.006
0.0084
0.0095
V
nA
µA
A
Ω
S
50
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Time
c
15
2550
900
415
19
7.5
6
1.5
11
10
24
9
V
GS
= 0 V, V
DS
= 10 V, f = 1 MHz
pF
30
nC
2.4
20
15
35
15
100
1.5
70
Ω
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 50 A
0.5
Turn-On Delay
V
DD
= 10 V, R
L
= 0.2
Ω
Rise Time
c
c
I
D
≅
50 A, V
GEN
= 10 V, R
G
= 2.5
Ω
Turn-Off Delay Time
c
Fall Time
Source-Drain Diode Ratings and Characteristic
(T
C
= 25 °C)
I
SM
Pulsed Current
V
SD
I
F
= 50 A, V
GS
= 0 V
Diode Forward Voltage
b
I
F
= 50 A, dI/dt = 100 A/µs
t
rr
Source-Drain Reverse Recovery Time
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
c. Independent of operating temperature.
ns
A
V
ns
1.2
35
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C unless noted)
160
140
V
GS
= 10 thru 5 V
120
I
D
- Drain Current (A)
4V
100
80
60
40
20
2V
0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
10
0
0.0
0.5
3V
20
25 °C
- 55 °C
1.0 1.5 2.0 2.5 3.0 3.5
V
GS
- Gate-to-Source
Voltage
(V)
4.0
4.5
I
D
- Drain Current (A)
80
100
60
40
T
C
= 125 °C
Output Characteristics
www.vishay.com
2
Transfer Characteristics
Document Number: 71931
S11-2308-Rev. D, 21-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD50N02-06P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C unless noted)
100
T
C
= - 55 °C
g
fs
- Transconductance (S)
80
25 °C
125 °C
0.008
V
GS
= 4.5 V
0.006
0.010
60
V
GS
= 6.3 V
40
R
DS(on)
0.004
V
GS
= 10 V
0.002
20
0
0
10
20
30
40
50
I
D
- Drain Current (A)
0.000
0
20
40
60
80
100
I
D
- Drain Current (A)
Transconductance
3500
3000
C
iss
C - Capacitance (pF)
2500
2000
1500
C
oss
1000
C
rss
500
0
0
4
8
12
16
20
0
0
10
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source Voltage (V )
8
V
DS
= 10 V
I
D
= 50 A
6
4
2
8
16
24
32
40
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
1.6
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 10
V
I
D
= 30 A
1.4
I
S
- Source Current (A)
100
Gate Charge
1.2
T
J
= 150 °C
10
T
J
= 25 °C
1.0
0.8
0.6
- 50
1
- 25
0
25
50
75
100
125
150
175
0
T
J
- Junction Temperature (°C)
0.3
0.6
0.9
1.2
V
SD
- Source-to-Drain
Voltage
(V)
1.5
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: 71931
S11-2308-Rev. D, 21-Nov-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71931.
www.vishay.com
4
Document Number: 71931
S11-2308-Rev. D, 21-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
E
b3
L3
A
C2
MILLIMETERS
DIM.
A
A1
b
b2
MIN.
2.18
-
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
2.28 BSC
4.56 BSC
1.40
0.89
-
1.01
1.78
1.27
1.02
1.52
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
-
6.73
-
10.41
MIN.
0.086
-
0.025
0.030
0.195
0.018
0.018
0.235
0.161
0.250
0.170
0.370
INCHES
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
0.265
-
0.410
D
H
b3
C
C2
L4
L5
gage plane height (0.5 mm)
L
D
D1
E
E1
H
e
e1
L
L3
L4
L5
b
e
e1
b2
C
A1
0.090 BSC
0.180 BSC
0.055
0.035
-
0.040
0.070
0.050
0.040
0.060
D1
E1
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
Notes
• Dimension L3 is for reference only.
Revision: 16-May-16
Document Number: 71197
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
卡巴斯基的安全研究人员称其发现了如何攻击Intel微处理器的远程攻击代码，据传，这一代码可以通过TCP/IP包和JavaScript代码到达用户系统。 目前受影响的系统包括Windows XP，Vista，Windows Server 2003，Windows Server 2008，Linux甚至是BSD和Mac。但所幸大多数错误可以由Intel和BIOS厂商联合进行修复。 卡...[详细]
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