RF MOSFET Transistors RF Transistor
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | ASI [ASI Semiconductor, Inc] |
产品种类 Product Category | RF MOSFET Transistors |
RoHS | Details |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 13 A |
Vds - Drain-Source Breakdown Voltage | 65 V |
技术 Technology | Si |
最小工作温度 Minimum Operating Temperature | - 65 C |
最大工作温度 Maximum Operating Temperature | + 200 C |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | 221-11-3 |
系列 Packaging | Tray |
Configuration | Single |
Operating Frequency | 200 MHz |
类型 Type | RF Power MOSFET |
NumOfPackaging | 1 |
Pd-功率耗散 Pd - Power Dissipation | 270 W |
Vgs - Gate-Source Voltage | 40 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |
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