SGP07N120
Fast IGBT in NPT-technology
•
lower
E
off
compared to previous generation
•
Short circuit withstand time – 10
µs
•
Designed for:
- Motor controls
- Inverter
- SMPS
•
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
1
C
G
E
PG-TO-220-3-1
•
Qualified according to JEDEC for target applications
•
Pb-free lead plating; RoHS compliant
•
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
SGP07N120
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150°C
Gate-emitter voltage
Avalanche energy, single pulse
I
C
= 8A,
V
CC
= 50V,
R
GE
= 25Ω, start at
T
j
= 25°C
Short circuit withstand time
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
T
j
,
T
stg
-
-55...+150
260
°C
2
V
CE
1200V
I
C
8A
E
off
0.7mJ
T
j
150°C
Marking
Package
GP07N120 PG-TO-220-3-1
Symbol
V
CE
I
C
Value
1200
16.5
7.9
Unit
V
A
I
Cpul s
-
V
GE
E
AS
t
SC
P
tot
27
27
±20
40
10
125
V
mJ
µs
W
V
GE
= 15V, 100V
≤
V
CC
≤
1200V,
T
j
≤
150°C
1
2
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3
Sep 07
Power Semiconductors
SGP07N120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 5 00
µA
V
CE(sat)
V
G E
= 15 V ,
I
C
= 8 A
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 35 0
µA
,
V
C E
=
V
G E
V
C E
=1200V,V
G E
=0V
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
Symbol
R
thJC
R
thJA
Conditions
Max. Value
1
Unit
K/W
PG-TO-220-3-1
62
Symbol
Conditions
Value
min.
1200
2.5
-
3
-
-
-
typ.
-
3.1
3.7
4
-
-
-
6
-
-
-
-
-
720
60
40
70
7
75
max.
-
3.6
4.3
5
Unit
V
µA
100
400
100
-
870
75
50
90
-
-
nC
nH
A
nA
S
pF
I
GES
g
fs
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
=0V,V
G E
=20V
V
C E
= 20 V ,
I
C
= 8 A
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 96 0 V,
I
C
=8 A
V
G E
= 15 V
V
G E
= 15 V ,t
S C
≤
10
µs
10 0 V≤
V
C C
≤
12 0 0 V,
T
j
≤
1 5 0° C
-
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3
Sep 07
Power Semiconductors
SGP07N120
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
°C
,
V
C C
= 80 0 V,
I
C
= 8 A,
V
G E
= 15 V /0 V ,
R
G
= 47
Ω,
1)
L
σ
=1 8 0n H,
1)
C
σ
= 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
27
29
440
21
0.6
0.4
1.0
35
38
570
27
0.8
0.55
1.35
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 5 0° C
V
C C
= 80 0 V,
I
C
= 8 A,
V
G E
= 15 V /0 V ,
R
G
= 47
Ω,
1)
L
σ
=1 8 0n H,
1)
C
σ
= 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
30
26
490
30
1.0
0.7
1.7
36
31
590
36
1.2
0.9
2.1
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
1)
Leakage inductance L
σ
and stray capacity C
σ
due to dynamic test circuit in figure E.
Power Semiconductors
3
Rev. 2.3
Sep 07
SGP07N120
35A
30A
10A
I
c
t
p
=5
µ
s
15
µ
s
I
C
,
COLLECTOR CURRENT
20A
15A
T
C
=80°C
I
C
,
COLLECTOR CURRENT
25A
50
µ
s
200
µ
s
1A
1ms
T
C
=110°C
10A
5A
0A
10Hz
I
c
0.1A
DC
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 47Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤
150°C)
150W
20A
125W
100W
75W
I
C
,
COLLECTOR CURRENT
50°C
75°C
100°C
125°C
P
tot
,
POWER DISSIPATION
15A
10A
50W
5A
25W
0W
25°C
0A
25°C
50°C
75°C
100°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
Power Semiconductors
4
Rev. 2.3
Sep 07
SGP07N120
25A
25A
20A
20A
V
GE
=17V
I
C
,
COLLECTOR CURRENT
15A
10A
15V
13V
11V
9V
7V
I
C
,
COLLECTOR CURRENT
15A
10A
V
GE
=17V
15V
13V
11V
9V
7V
5A
5A
0A
0V
1V
2V
3V
4V
5V
6V
7V
0A
0V
1V
2V
3V
4V
5V
6V
7V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T
j
= 150°C)
V
CE(sat)
,
COLLECTOR
-
EMITTER SATURATION VOLTAGE
25A
6V
I
C
=16A
5V
20A
I
C
,
COLLECTOR CURRENT
4V
15A
T
J
=+150°C
T
J
=+25°C
10A
T
J
=-40°C
I
C
=8A
I
C
=4A
3V
2V
5A
1V
0A
3V
5V
7V
9V
11V
0V
-50°C
0°C
50°C
100°C
150°C
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V
CE
= 20V)
T
j
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
Power Semiconductors
5
Rev. 2.3
Sep 07
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