MBD301G,
MMBD301LT1G,
MMBD301LT3G,
SMMBD301LT3G
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
www.onsemi.com
30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
•
•
•
•
Extremely Low Minority Carrier Lifetime
−
15 ps (Typ)
Very Low Capacitance
−
1.5 pF (Max) @ V
R
= 15 V
Low Reverse Leakage
−
I
R
= 13 nAdc (Typ) MBD301, MMBD301
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current (DC)
Total Device Dissipation
@ T
A
= 25°C
MBD301G
MMBD301LT1G, MMBD301LT3G,
SMMBD301LT3G
Derate above 25°C
MBD301G
MMBD301LT1G, MMBD301LT3G,
SMMBD301LT3G
Operating Junction
Temperature Range
Storage Temperature Range
T
J
T
stg
Symbol
V
R
I
F
P
F
280
200
Value
30
200 (Max)
Unit
V
mA
MW
TO−92 2−Lead
CASE 182
STYLE 1
TO−92
2
CATHODE
1
ANODE
SOT−23 (TO−236)
CASE 318
STYLE 8
SOT−23
3
CATHODE
1
ANODE
MARKING DIAGRAMS
MBD
301
AYW
G
G
1
TO−92
SOT−23
4T M
G
G
2.8
2.0
−55
to
+125
−55
to
+150
mW/°C
°C
°C
A
= Assembly Location
Y
= Year
W = Work Week
4T = Device Code (SOT−23)
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 1994
March, 2018
−
Rev. 9
1
Publication Order Number:
MBD301/D
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
mA)
Total Capacitance
(V
R
= 15 V, f = 1.0 MHz) Figure 1
Reverse Leakage
(V
R
= 25 V) Figure 3
Forward Voltage
(I
F
= 1.0 mAdc) Figure 4
Forward Voltage
(I
F
= 10 mAdc) Figure 4
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
Min
30
−
−
−
−
Typ
−
0.9
13
0.38
0.52
Max
−
1.5
200
0.45
0.6
Unit
V
pF
nAdc
Vdc
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
MBD301G
MMBD301LT1G
MMBD301LT3G
SMMBD301LT3G
Package
TO−92
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
5,000 Units / Bulk
3,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G
TYPICAL ELECTRICAL CHARACTERISTICS
2.8
C T, TOTAL CAPACITANCE (pF)
2.4
2.0
1.6
1.2
0.8
0.4
0
0
3.0
6.0
18
9.0
12
15
21
V
R
, REVERSE VOLTAGE (VOLTS)
24
27
30
t
, MINORITY CARRIER LIFETIME (ps)
f = 1.0 MHz
500
400
KRAKAUER METHOD
300
200
100
0
0
10
20
30
40
50
60
70
I
F
, FORWARD CURRENT (mA)
80
90
100
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
10
IF, FORWARD CURRENT (mA)
100
IR, REVERSE LEAKAGE (
m
A)
1.0
T
A
= 100°C
10
T
A
= 85°C
T
A
= - 40°C
0.1
75°C
1.0
T
A
= 25°C
0.01
25°C
0.001
0.1
0
6.0
12
18
V
R
, REVERSE VOLTAGE (VOLTS)
24
30
0.2
0.4
0.6
0.8
V
F
, FORWARD VOLTAGE (VOLTS)
1.0
1.2
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
I
F(PEAK)
CAPACITIVE
CONDUCTION
I
R(PEAK)
FORWARD
CONDUCTION
STORAGE
CONDUCTION
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
PADS
DUT
SAMPLING
OSCILLOSCOPE
(50
W
INPUT)
Figure 5. Krakauer Method of Measuring Lifetime
www.onsemi.com
3
DOC. NO.
PAGE NO.
98ASB42118B
2
of
2
ISSUE
REVISION
COORD/
DATE
J
K
L
SH 1: DIM “F” WAS ..407-.482, .016-.019. REQ BY T. GRINTER.
SH 1 : DIMENSIONS “D”, “F” WERE 0.56, 0.022. REQ BY
T. GRINTER.
DELETED DIM “F” AND REVISED NOTE 4. REQ BY T. GRINTER.
FB
27 JAN1998
FB
10 FEB 1998
FB
14 APR 1998
Electronic versions are uncontrolled except when accessed directly from WWCM.
Printed versions are uncontrolled, except when stamped "CONTROLLED COPY" in red.
TI技术论坛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
