(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage and Operating Junction Temperature Range (Note 1)
Symbol
V
RRM
V
RWM
V
R
I
O
I
FRM
I
FSM
T
stg
, T
J
Value
200
Unit
V
2.0
4.0
40
−65 to +175
A
A
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
Symbol
Y
JCL
R
qJA
R
qJA
Value
12
75
260
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(I
F
= 1.0 A, T
J
= 25°C)
(I
F
= 2.0 A, T
J
= 25°C)
(I
F
= 1.0 A, T
J
= 125°C)
(I
F
= 2.0 A, T
J
= 125°C)
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
Reverse Recovery Time
I
F
= 2.0 A; V
R
= 30 V; dl/dt = 50 A/ms
T
J
= −40°C to 150°C
2. Mounted with 700 mm
2
copper pad size (Approximately 1 in
2
) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm
2
copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width
≤
380
ms,
Duty Cycle
≤
2.0%.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Symbol
V
F
1.0
1.05
0.86
0.90
I
R
0.5
35
t
rr
50
ns
mA
Value
Unit
V
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2
NHPM220, NRVHPM220
TYPICAL CHARACTERISTICS
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
10
T
A
= 150°C
1 T
A
= 125°C
0.1
T
A
= 175°C
10
T
A
= 150°C
1
T
A
= 125°C
0.1
T
A
= 175°C
T
A
= 25°C
T
A
= 25°C
0.01
T
A
= −40°C
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0.01
T
A
= −40°C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.001
0.001
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E−03
1.E−04
T
A
= 150°C
T
A
= 175°C
T
A
= 125°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−03
T
A
= 175°C
1.E−04
T
A
= 125°C
T
A
= 150°C
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
1.E−11
0
20
40
60
80
100 120 140 160 180 200
T
A
= −55°C
T
A
= 25°C
1.E−05
1.E−06
T
A
= 25°C
1.E−07
1.E−08
T
A
= −40°C
0
20
40
60
80
100 120 140 160 180 200
1.E−09
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
1.E−12
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1000
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
Figure 4. Maximum Reverse Characteristics
DC
Square Wave
100
R
qJC
= 12°C/W
20
40
60
80
100
120
140
160 180
10
0
20
40
60
80
100 120 140 160 180 200
V
R
, REVERSE VOLTAGE (V)
T
C
, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
NHPM220, NRVHPM220
TYPICAL CHARACTERISTICS
3.0
P
F(AV)
, AVERAGE FORWARD POW-
ER DISSIPATION (W)
I
PK
/I
AV
= 20
2.5
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
dc
I
PK
/I
AV
= 5
I
PK
/I
AV
= 10
T
J
= 175°C
Square Wave
Figure 7. Forward Power Dissipation
1000
50% (DUTY CYCLE)
25%
10%
5.0%
2.0%
1.0%
100
R(t) (C/W)
10
1.0
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 8. Thermal Response, Junction−to−Ambient (20 mm
2
pad)
100
50% (DUTY CYCLE)
25%
10
R(t) (C/W)
10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 9. Thermal Response, Junction−to−Ambient (1 in
2
pad)
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4
NHPM220, NRVHPM220
PACKAGE DIMENSIONS
POWERMITE
CASE 457−04
ISSUE F
−A−
C
J
S
F
0.08 (0.003)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH, PROTRUSIONS OR GATE BURRS SHALL
NOT EXCEED 0.15 (0.006) PER SIDE.
DIM
A
B
C
D
F
H
J
K
L
R
S
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
1.75
2.05 0.069
0.081
1.75
2.18 0.069
0.086
0.85
1.15 0.033
0.045
0.40
0.69 0.016
0.027
0.70
1.00 0.028
0.039
-0.05
+0.10 -0.002 +0.004
0.10
0.25 0.004
0.010
3.60
3.90 0.142
0.154
0.50
0.80 0.020
0.031
1.20
1.50 0.047
0.059
0.50 REF
0.019 REF
M
T B
S
C
S
PIN 1
−B−
K
PIN 2
R
L
J
H
−T−
0.08 (0.003)
M
D
T B
S
C
S
SOLDERING FOOTPRINT*
0.635
0.025
2.67
0.105
0.762
0.030
2.54
0.100
1.27
0.050
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
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