TO
-22
0A
B
BUK9504-40A
N-channel TrenchMOS logic level FET
Rev. 2 — 7 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
40
75
300
V
A
W
Static characteristics
R
DSon
V
GS
= 4.3 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
-
-
-
3.7
2.9
3.5
5.9
4
4.4
mΩ
mΩ
mΩ
NXP Semiconductors
BUK9504-40A
N-channel TrenchMOS logic level FET
Quick reference data
…continued
Parameter
Conditions
Min
-
Typ
-
Max Unit
1.6
J
Table 1.
Symbol
E
DS(AL)S
Avalanche ruggedness
non-repetitive
I
D
= 75 A; V
sup
≤
40 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 5 V;
avalanche energy T
j(init)
= 25 °C; unclamped
gate-drain charge V
GS
= 5 V; I
D
= 25 A;
V
DS
= 32 V; T
j
= 25 °C;
see
Figure 13
Dynamic characteristics
Q
GD
-
56
-
nC
[1]
Continuous current is limited by package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78A (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK9504-40A
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
Type number
BUK9504-40A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 February 2011
2 of 14
NXP Semiconductors
BUK9504-40A
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4.
Limiting values
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
T
mb
= 100 °C; V
GS
= 5 V; see
Figure 1
T
mb
= 25 °C; V
GS
= 5 V; see
Figure 1;
see
Figure 3
I
DM
P
tot
T
stg
T
j
I
S
I
SM
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
[3]
[1]
[1]
[1]
[2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Min
-
-
-15
-
-
-
-
-
-55
-55
-
-
-
-
Max
40
40
15
75
75
198
794
300
175
175
198
75
794
1.6
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
J
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Source-drain diode
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source I
D
= 75 A; V
sup
≤
40 V; R
GS
= 50
Ω;
V
GS
= 5 V;
avalanche energy
T
j(init)
= 25 °C; unclamped
[1]
[2]
[3]
Continuous current is limited by package.
Current is limited by power dissipation chip rating.
Current is limited by power dissipation chip rating
BUK9504-40A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 February 2011
3 of 14
NXP Semiconductors
BUK9504-40A
N-channel TrenchMOS logic level FET
200
I
D
(A)
150
03ne93
120
P
der
(%)
80
03na19
100
40
50
Capped at 75 A due to package
0
25
50
75
100
125
150
175
200
T
mb
(°C)
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
10
3
R
DSon
= V
DS
/ I
D
I
D
(A)
10
2
Capped at 75 A due to package
DC
10
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
03ne68
t
p
= 10
μs
100
μs
1 ms
10 ms
100 ms
1
1
10
V
DS
(V)
102
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9504-40A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 February 2011
4 of 14
NXP Semiconductors
BUK9504-40A
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see
Figure 4
vertical in still air
Min
-
-
Typ
-
60
Max
0.5
-
Unit
K/W
K/W
1
Z
th(j-mb)
(K/W)
10
−1
03ne69
δ
= 0.5
0.2
0.1
0.05
10
−2
0.02
P
δ
=
t
p
T
Single Shot
10
−3
t
p
T
t
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9504-40A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 February 2011
5 of 14
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