Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
Channel-1
20
Channel-2
R
DS(on)
(Ω)
0.012 at V
GS
= 10 V
0.0175 at V
GS
= 4.5 V
0.010 at V
GS
= 10 V
0.0115 at V
GS
= 4.5 V
I
D
(A)
9.6
7.8
13.5
12.8
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
20
V
SD
(V)
Diode Forward Voltage
0.53 V at 3 A
I
F
(A)
2.0
• DC/DC Converters
- Game Stations
- Notebook PC Logic
SO-14
D
1
D
1
G
1
G
2
S
2
S
2
S
2
1
2
3
4
5
6
7
Top View
Ordering Information:
Si4340DY-T1-E3 (Lead (Pb)-free)
Si4340DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
14
13
12
11
10
9
8
S
1
S
1
D
2
D
2
D
2
D
2
D
2
S
1
N-Channel 1
MOSFET
S
2
N-Channel 2
MOSFET
G
1
G
2
Schottky Diode
D
1
D
2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Channel-1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.8
2.0
1.28
9.6
7.7
40
1.04
1.14
0.73
2.73
3.0
1.9
- 55 to 150
± 20
7.3
5.8
13.5
10.8
50
1.30
1.43
0.91
W
°C
10 s
Steady State
20
± 16
9.9
7.5
A
10 s
Channel-2
Steady State
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72376
S09-2436-Rev. C, 16-Nov-09
www.vishay.com
1
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typ.
53
92
35
Max.
62.5
110
42
Channel-2
Typ.
35
72
18
Max.
42
87
23
Schottky
Typ.
40
76
21
Max.
48
93
25
°C/W
Unit
Si4340DY
Vishay Siliconix
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
b
I
D(on)
V
DS
=
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 9.6 A
V
GS
= 10 V, I
D
= 13.5 A
V
GS
= 4.5 V, I
D
= 7.8 A
V
GS
= 4.5 V, I
D
= 12.8 A
V
DS
= 15 V, I
D
= 9.6 A
V
DS
= 15 V, I
D
= 13.5 A
I
S
= 1.8 A, V
GS
= 0 V
I
S
= 2.73 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.8
0.8
2.00
1.90
100
100
1
100
15
4000
V
nA
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
µA
20
30
0.0095
0.007
0.0135
0.0085
25
38
0.74
0.485
10
17
3.3
4.5
3.1
4.5
0.9
1.4
15
24
16
22
42
68
16
19
35
38
0.012
0.010
0.0175
0.0115
A
Drain-Source On-State Resistance
b
R
DS(on)
Ω
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
g
fs
V
SD
S
1.1
0.53
15
25
nC
V
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
Channel-1
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 9.6 A
Channel-2
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= - 13.5 A
f = 1 MHz
Channel-1
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
Channel-2
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
I
F
= 1.8 A, dI/dt = 100 A/µs
I
F
= 2.73 A, dI/dt = 100 µA/µs
0.45
0.7
1.35
2.1
25
35
25
35
65
100
25
30
60
65
Ω
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
SCHOTTKY SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V
F
I
rm
C
T
Test Conditions
I
F
= 3 A
I
F
= 3 A, T
J
= 125 °C
V
R
= 20 V
V
R
= 20 V, T
J
= 75 °C
V
R
= - 20 V, T
J
= 125 °C
V
R
= 15 V
Min.
Typ.
0.485
0.42
0.008
0.4
6.5
102
Max.
0.53
0.42
0.100
5
20
Unit
V
Maximum Reverse Leakage Current
Junction Capacitance
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Definition of interactive projection system:
Interactive projection systems, also known as multimedia interactive projection, are available in floor, wall, and tabletop interactive projection....[详细]
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