Freescale Semiconductor
Technical Data
Document Number: MRF9085
Rev. 11, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large - signal, common - source amplifier
applications in 26 volt base station equipment.
•
Typical CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 700 mA
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 20 Watts
Power Gain — 17.9 dB
Efficiency — 28%
Adjacent Channel Power —
750 kHz: - 45.0 dBc @ 30 kHz BW
1.98 MHz: - 60.0 dBc @ 30 kHz BW
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9085LR3
MRF9085LSR3
880 MHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
CASE 465 - 06, STYLE 1
NI - 780
MRF9085LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF9085LSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
=
25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
250
1.43
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.7
Unit
°C/W
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MRF9085LR3 MRF9085LSR3
4-1
Freescale Semiconductor
RF Product Device Data
ARCHIVE INFORMATION
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
MRF9085LR3
MRF9085LSR3
Class
1 (Minimum)
M2 (Minimum)
M1 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 700 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 6 Adc)
Dynamic Characteristics
(1)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
1. Part is internally input matched.
C
oss
C
rss
—
—
73
2.9
—
—
pF
pF
(continued)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.0
—
—
—
—
3.7
0.19
8.0
4.0
—
0.4
—
Vdc
Vdc
Vdc
S
MRF9085LR3 MRF9085LSR3
4-2
Freescale Semiconductor
RF Product Device Data
ARCHIVE INFORMATION
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
Power Output, 1 dB Compression Point, CW
(V
DD
= 26 Vdc, I
DQ
= 700 mA,
f1 = 880.0 MHz)
Common- Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 90 W CW, I
DQ
= 700 mA,
f1 = 880.0 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 90 W CW, I
DQ
= 700 mA,
f1 = 880.0 MHz)
Power Output, 1 dB Compression Point, CW
(1)
(V
DD
= 26 Vdc, I
DQ
= 700 mA,
f1 = 960 MHz)
G
ps
17
17.9
—
dB
Symbol
Min
Typ
Max
Unit
η
36
40
—
%
IMD
—
- 31
- 28
dBc
IRL
—
- 21
-9
dB
ARCHIVE INFORMATION
G
ps
—
17.9
—
dB
η
—
40.0
—
%
IMD
—
- 31
—
dBc
IRL
—
- 16
—
dB
P
1dB
—
105
—
W
G
ps
—
17.5
—
dB
η
—
51
—
%
P
1dB
—
105
—
W
1. These values are derived from a 960 MHz optimized test fixture. Values are not applicable to Figures 1 and 2.
MRF9085LR3 MRF9085LSR3
Freescale Semiconductor
RF Product Device Data
4-3
ARCHIVE INFORMATION
V
GG
+
+
C7
B1
B2
B3
+
+
C18
+
C19
V
DD
+
C17
C8
C9
L1
L2
C16
C11
RF
INPUT
C6
Z1
C1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
C10
C4
C3
C5
DUT
C12
C13
Z11
Z12 Z13 Z14
Z15
Z16
Z17 Z18
Z19
C15
C14
Z20
RF
OUTPUT
ARCHIVE INFORMATION
B1, B2, B3
C1, C9, C15, C16
C3
C4, C13
C5, C6, C12
C7, C17, C18, C19
C8
C10, C11
C14
L1
L2
N1, N2
WB1, WB2
Z1
Z2
Z3
Z4
Z5
Short Ferrite Beads, Surface Mount
47 pF Chip Capacitors, ATC
5.6 pF Chip Capacitor, ATC
0.8 - 8.0 Variable Capacitors, Gigatrim
8.2 pF Chip Capacitors, ATC
10
mF,
35 V Tantalum Surface Mount Capacitors, Kemet
20 K pF Chip Capacitor, ATC
16 pF Chip Capacitors, ATC
0.6 - 4.5 Variable Capacitor, Gigatrim
7.15 nH Inductor, Coilcraft
17.5 nH Inductor, Coilcraft
N - Type Panel Mount, Stripline, M/A - Com
5 Mil BeCu Shim (0.225 x 0.525)
0.219″ x 0.080″ Microstrip
0.150″ x 0.080″ Microstrip
0.851″ x 0.080″ Microstrip
0.125″ x 0.220″ Microstrip
0.123″ x 0.220″ Microstrip
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
PCB
0.076″ x 0.220″ Microstrip
0.261″ x 0.220″ Microstrip
0.220″ x 0.630″ x 0.200″ Taper
0.240″ x 0.630″ Microstrip
0.060″ x 0.630″ Microstrip
0.067″ x 0.630″ Microstrip
0.233″ x 0.630″ Microstrip
0.630″ x 0.220″ x 0.200″ Taper
0.200″ x 0.220″ Microstrip
0.055″ x 0.220″ Microstrip
0.088″ x 0.220″ Microstrip
0.226″ x 0.220″ Microstrip
0.868″ x 0.080″ Microstrip
0.129″ x 0.080″ Microstrip
0.223″ x 0.080″ Microstrip
Arlon GX - 0300- 55- 22, 30 mils
ε
r
= 2.55
Figure 1. 865 - 895 MHz Broadband Test Circuit Schematic
MRF9085LR3 MRF9085LSR3
4-4
Freescale Semiconductor
RF Product Device Data
ARCHIVE INFORMATION
C7
VGG
B1
C8
B2
C6
C11
B3
C17
V DD
C19
C16
C18
L2
C15
C1
C9
WB1
L1
C3
C4
C5
WB2
C12
C14
CUTOUT
C10
C13
ARCHIVE INFORMATION
MRF9085
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 865 - 895 MHz Broadband Test Circuit Component Layout
MRF9085LR3 MRF9085LSR3
Freescale Semiconductor
RF Product Device Data
4-5
ARCHIVE INFORMATION
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