AUTOMOTIVE GRADE
PD - 97619
AUIRGP35B60PD-E
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
NPT Technology, Positive Temperature Coefficient
Lower V
CE
(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
Lead-Free, RoHS Compliant
Automotive Qualified*
G
E
C
V
CES
= 600V
V
CE(on)
typ. = 1.85V
@ V
GE
= 15V I
C
= 22A
n-channel
C
Equivalent MOSFET
Parameters
R
CE(on)
typ. = 84mΩ
I
D
(FET equivalent) = 35A
Applications
•
PFC and ZVS SMPS Circuits
•
DC/DC Converter Charger
E
C
G
TO-247AD
AUIRGP35B60PD-E
Benefits
•
Parallel Operation for Higher Current Applications
•
Lower Conduction Losses and Switching Losses
•
Higher Switching Frequency up to 150KHz
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FRM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
Clamped Inductive Load Current
Max.
600
60
34
120
120
40
15
60
±20
308
123
-55 to +150
Units
V
d
A
Diode Continous Forward Current
Diode Continous Forward Current
Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
e
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
*Qualification
standards can be found at http://www.irf.com/
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
6.0 (0.21)
Max.
0.41
1.7
–––
40
–––
Units
°C/W
g (oz)
1
www.irf.com
01/11/10
AUIRGP35B60PD-E
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
Min.
600
—
—
—
—
—
—
Typ.
—
0.78
1.7
1.85
2.25
2.37
3.00
4.0
-10
36
3.0
0.35
1.30
1.20
—
Max. Units
—
—
—
2.15
2.55
2.80
3.45
5.0
—
—
375
—
1.70
1.60
±100
nA
V
S
µA
mA
V
V
V
Ω
Conditions
V
GE
= 0V, I
C
= 500µA
1MHz, Open Collector
I
C
= 22A, V
GE
= 15V
I
C
= 35A, V
GE
= 15V
I
C
= 22A, V
GE
= 15V, T
J
= 125°C
I
C
= 35A, V
GE
= 15V, T
J
= 125°C
I
C
= 250µA
V
CE
= 50V, I
C
= 22A, PW = 80µs
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 125°C
I
F
= 15A, V
GE
= 0V
I
F
= 15A, V
GE
= 0V, T
J
= 125°C
V
GE
= ±20V, V
CE
= 0V
Ref.Fig
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
V/°C V
GE
= 0V, I
C
= 1mA (25°C-125°C)
4, 5,6,8,9
R
G
V
CE(on)
Internal Gate Resistance
Collector-to-Emitter Saturation Voltage
V
GE(th)
∆V
GE(th)
/∆TJ
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
3.0
—
—
—
—
—
—
—
7,8,9
mV/°C V
CE
= V
GE
, I
C
= 1.0mA
gfe
I
CES
V
FM
I
GES
10
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Qg
Q
gc
Q
ge
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
C
oes
eff.
C
oes
eff. (ER)
RBSOA
t
rr
Q
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Time Related)
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
160
55
21
220
215
435
26
6.0
110
8.0
410
330
740
26
8.0
130
12
3715
265
47
135
179
Max. Units
240
83
32
270
265
535
34
8.0
122
10
465
405
870
34
11
150
16
—
—
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
f = 1Mhz
ns
µJ
ns
µJ
nC
I
C
= 22A
V
CC
= 400V
V
GE
= 15V
Conditions
Ref.Fig
17
CT1
I
C
= 22A, V
CC
= 390V
V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
T
J
= 25°C
CT3
f
I
C
= 22A, V
CC
= 390V
V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
T
J
= 25°C
CT3
fÃÃ
f
I
C
= 22A, V
CC
= 390V
V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
T
J
= 125°C
I
C
= 22A, V
CC
= 390V
V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
T
J
= 125°C
CT3
11,13
WF1,WF2
CT3
12,14
WF1,WF2
ÃfÃÃ
16
Effective Output Capacitance (Energy Related)
Reverse Bias Safe Operating Area
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Peak Reverse Recovery Current
g
g
—
—
V
GE
= 0V, V
CE
= 0V to 480V
T
J
= 150°C, I
C
= 120A
15
3
CT2
FULL SQUARE
—
—
—
—
—
—
42
74
80
220
4.0
6.5
60
120
180
600
6.0
10
A
nC
ns
V
CC
= 480V, Vp =600V
Rg = 22Ω, V
GE
= +15V to 0V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 15A, V
R
= 200V,
di/dt = 200A/µs
I
F
= 15A, V
R
= 200V,
di/dt = 200A/µs
I
F
= 15A, V
R
= 200V,
di/dt = 200A/µs
19
21
19,20,21,22
CT5
Notes:
R
CE(on)
typ. = equivalent on-resistance = V
CE(on)
typ./ I
C
, where V
CE(on)
typ.= 1.85V and I
C
=22A. I
D
(FET Equivalent) is the equivalent MOSFET I
D
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 28 µH, R
G
= 22
Ω.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
C
oes
eff. is a fixed capacitance that gives the same charging time as C
oes
while V
CE
is rising from 0 to 80% V
CES
.
C
oes
eff.(ER) is a fixed capacitance that stores the same energy as C
oes
while V
CE
is rising from 0 to 80% V
CES
.
2
www.irf.com
AUIRGP35B60PD-E
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments:
This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.
TO-247
Class M4 (425V)
AEC-Q101-002
Class H2 (4000V)
AEC-Q101-001
Class C5 (1125V)
AEC-Q101-005
Yes
MSL1
†††
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device Model
RoHS Compliant
†††
ESD
†††
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
www.irf.com
3
AUIRGP35B60PD-E
70
60
50
Ptot (W)
IC (A)
350
300
250
200
150
100
50
0
0
20
40
60
80
100 120 140 160
0
20
40
60
80
100 120 140 160
T C (°C)
T C (°C)
40
30
20
10
0
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
70
60
50
ICE (A)
100
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
IC A)
40
30
20
10
10
1
10
100
1000
0
0
1
2
3
VCE (V)
4
5
VCE (V)
Fig. 3
- Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
70
60
50
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
70
60
50
Fig. 4
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
ICE (A)
30
20
10
0
0
1
2
3
VCE (V)
4
5
ICE (A)
40
40
30
20
10
0
0
1
2
3
VCE (V)
4
5
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 125°C; tp = 80µs
4
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AUIRGP35B60PD-E
800
700
600
500
VCE (V)
ICE (A)
10
T J = 25°C
T J = 125°C
9
8
7
6
5
4
TJ = 125°C
T J = 25°C
0
5
10
VGE (V)
15
20
3
2
1
0
5
10
VGE (V)
15
20
ICE = 11A
ICE = 22A
ICE = 35A
400
300
200
100
0
Fig. 7
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
10
9
I sa t n o sF r adCr e t -I ( )
n t n e u owr ur n
a
A
100
Fig. 8
- Typical V
CE
vs. V
GE
T
J
= 25°C
8
7
VCE (V)
6
5
4
3
2
1
0
5
10
VGE (V)
ICE = 11A
ICE = 22A
ICE = 35A
F
10
T
J
= 150°C
T
J
= 125°C
T
J
=
25°C
15
20
1
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V
FM
(V)
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= 125°C
800
700
600
Energy (µJ)
Fig. 10
- Typ. Diode Forward Characteristics
tp = 80µs
1000
Swiching Time (ns)
EON
500
400
300
200
100
0
0
5
10
15
20
IC (A)
25
30
35
40
EOFF
100
td OFF
tdON
10
tF
tR
1
0
10
20
30
40
Fig. 11
- Typ. Energy Loss vs. I
C
T
J
= 125°C; L = 200µH; V
CE
= 390V, R
G
= 3.3Ω; V
GE
= 15V.
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Diode clamp used: 30ETH06 (See C.T.3)
IC (A)
Fig. 12
- Typ. Switching Time vs. I
C
T
J
= 125°C; L = 200µH; V
CE
= 390V, R
G
= 3.3Ω; V
GE
= 15V.
Diode clamp used: 30ETH06 (See C.T.3)
5
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