VSLB9530S
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
FEATURES
• Package type: leaded
• Package form: TELUX
• Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6
• Peak wavelength:
λ
p
= 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity, vertical:
ϕ
v
= ± 18°
• Angle of half intensity, horizontal:
ϕ
h
= ± 36°
19232
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: f
c
= 24 MHz
DESCRIPTION
VSLB59530S, is an infrared, 940 nm emitting diode in
GaAlAs multi-quantum well (MQW) technology with high
radiant power and high speed. It is molded in a clear high
power TELUX package with an oval lens resulting in angle of
half intensities in vertical direction of ± 18° and in horizontal
direction of ± 36°.
• Good spectral matching with Si photodetectors
• Compatible with wave solder processes according to
CECC 00802
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• Emitter source for gesture recognition applications
• Emitter source for 3D TV
• Emitter source for mid range proximity detection
• Emitter source for object/presence detection
PRODUCT SUMMARY
COMPONENT
VSLB9530S
I
e
(mW/sr)
60
ϕ
v
(deg)
± 18
ϕ
h
(deg)
± 36
λ
p
(nm)
940
t
r
(ns)
15
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
VSLB9530S
Note
• MOQ: minimum order quantity
PACKAGING
Tube
REMARKS
MOQ: 2100 pcs, 70 pcs/tube
PACKAGE FORM
TELUX
Rev. 1.1, 03-Sep-13
Document Number: 82564
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSLB9530S
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
t
≤
5 s, 1.5 mm from body preheat
temperature 100 °C/30 s
T
sd
R
thJA
VALUE
5
150
300
1.5
232.5
100
- 40 to + 95
- 40 to + 100
260
200
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
250
160
140
P
V
- Power Dissipation (mW)
200
I
F
- Forward Current (mA)
120
100
80
60
40
20
150
100
R
thJA
= 200 K/W
R
thJA
= 200 K/W
50
0
0
10
20 30
40
50
60
70 80
90
100
0
0
10
20 30
40
50
60
70 80
90
100
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity, vertical
Angle of half intensity, horizontal
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Cut-off frequency
I
F
= 30 mA
I
F
= 30 mA
I
F
= 30 mA
I
F
= 100 mA, 20 % to 80 %
I
F
= 100 mA, 20 % to 80 %
I
DC
= 70 mA, I
AC
= 30 mA pp
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 150 mA, t
p
= 20 ms
I
F
= 1.5 A, t
p
= 100 μs
I
F
= 150 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0 mW/cm
2
I
F
= 150 mA, t
p
= 20 ms
I
F
= 1.5 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 150 mA
SYMBOL
V
F
V
F
V
F
TK
VF
I
R
C
J
I
e
I
e
φ
e
TKφ
e
ϕ
v
ϕ
h
λ
p
Δλ
TKλ
p
t
r
t
f
f
c
40
86
60
520
40
- 0.42
± 18
± 36
940
25
0.25
15
15
24
95
MIN.
1.05
TYP.
1.28
1.31
1.9
- 0.89
10
MAX.
1.5
1.55
UNIT
V
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
deg
nm
nm
nm/K
ns
ns
MHz
Rev. 1.1, 03-Sep-13
Document Number: 82564
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSLB9530S
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
I
e,rel
- Relative Radiant Intensity (%)
10
150
140
130
120
110
100
90
80
70
60
50
- 50
t
p
= 20 ms
I
F
= 150 mA
I
F
- Forward Current (mA)
t
p
= 100 µs
1
0.1
0.01
0.001
0.5
1.0
1.5
2.0
- 25
0
25
50
75
100
V
F
- Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
T
amb
- Ambient Temperature (°C)
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
1000
100
t
p
= 100 µs
Φ
e rel
- Relative Radiant Power (%)
I
e
- Radiant Intensity (mW/sr)
90
80
70
60
50
40
30
20
10
0
840
880
920
960
1000
1040
I
F
= 30 mA
100
10
1
0.1
0.001
0.01
0.1
1
10
21445
I
F
- Forward Current (A)
Fig. 4 - Radiant Intensity vs. Forward Current
λ
- Wavelength (nm)
Fig. 7 - Relative Radiant Power vs. Wavelength
1.5
0°
vertical
10°
20°
30°
I
e, rel
- Relative Radiant Sensitivity
V
F
- Forward Voltage (V)
1.4
horizontal
vertical
40°
1.3
I
F
= 150 mA
1.0
0.9
0.8
0.7
horizontal
50°
60°
70°
80°
0.6
0.4
0.2
0
1.2
1.1
t
p
= 20 ms
1.0
- 50
- 25
0
25
50
75
100
T
amb
- Ambient Temperature (°C)
Fig. 5 - Forward Voltage vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Rev. 1.1, 03-Sep-13
Document Number: 82564
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
VSLB9530S
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
Vishay Semiconductors
Rev. 1.1, 03-Sep-13
Document Number: 82564
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSLB9530S
www.vishay.com
FAN FOLD BOX DIMENSIONS
in millimeters
Vishay Semiconductors
Label
600
45
16491
110
Label
Rev. 1.1, 03-Sep-13
Document Number: 82564
5
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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