Freescale Semiconductor
Technical Data
Document Number: MHL9236N
Rev. 8, 8/2006
Cellular Band
RF Linear LDMOS Amplifier
Designed for ultra- linear amplifier applications in
50 ohm system
s operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for the most demanding analog or digital modulation
systems, such as TDMA, CDMA or QPSK.
•
Third Order Intercept: 47 dBm Typ
•
Power Gain: 30.5 dB Typ (@ f = 880 MHz)
•
Input and Output VSWR
v
1.5:1
Features
•
Excellent Phase Linearity and Group Delay Characteristics
•
Ideal for Feedforward Base Station Applications
•
For Use in TDMA, CDMA, QPSK or Analog Systems
•
N Suffix Indicates Lead - Free Terminations
MHL9236N
800 - 960 MHz
2.5 W, 30.5 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1. Absolute Maximum Ratings
(T
C
= 25°C unless otherwise noted)
Rating
DC Supply Voltage
RF Input Power
Storage Temperature Range
Operating Case Temperature Range
Symbol
V
DD
P
in
T
stg
T
C
Value
30
+10
- 40 to +100
- 20 to +100
Unit
Vdc
dBm
°C
°C
Table 2. Electrical Characteristics
(V
DD
= 26 Vdc, T
C
= 25°C; 50
Ω
System)
Characteristic
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Compression
(f = 880 MHz)
(f = 800 - 960 MHz)
(f = 880 MHz)
Symbol
I
DD
G
p
G
F
P1dB
ITO
NF
Min
—
29
—
33
46
—
Typ
550
30.5
0.1
34
47
3.5
Max
620
32
0.3
—
—
4.5
Unit
mA
dB
dB
dBm
dBm
dB
Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz)
Noise Figure
(f = 800 - 960 MHz)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MHL9236N
1
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
40
POWER GAIN/RETURN LOSS (dB)
G
p
20
P1dB, ITO (dBm)
45
50
ITO
0
ORL
−20
IRL
40
35
V
DD
= 26 Vdc
T
C
= 25°C
P1dB
30
400
V
DD
= 26 Vdc
T
C
= 25°C
1000
1200
−40
400
800
1200
f, FREQUENCY (MHz)
1600
2000
600
800
f, FREQUENCY (MHz)
Figure 1. Power Gain, Input Return Loss,
Output Return Loss versus Frequency
Figure 2. P1dB, ITO versus Frequency
33
32
G p , POWER GAIN (dB)
31
G
p
30
29
I
DD
28
27
−40
565
560
120
575
570
V
DD
= 26 Vdc
f = 880 MHz
580
I DD , (mA)
50
48
V
DD
= 26 Vdc
f = 880 MHz 35
34.5
P1dB (dBm)
PHASE LINEARITY(
°)
ITO
46
ITO (dBm)
44
P1dB
42
40
−40
34
33.5
−20
0
20
40
60
TEMPERATURE (°C)
80
100
−20
0
40
60
20
TEMPERATURE (°C)
80
100
33
120
Figure 3. Power Gain, I
DD
versus Temperature
Figure 4. ITO, P1dB versus Temperature
−420
−425
2.2
0.30
0.50
G F , GAIN FLATNESS (dB)
GROUP DELAY (nS)
−430
PHASE (
°)
PHASE
−435
−440
−445
−450
−40
GROUP DELAY
V
DD
= 26 Vdc
f = 880 MHz
−20
0
20
40
60
TEMPERATURE (°C)
80
100
2.1
0.20
PHASE LINEARITY
0.40
2.0
0.10
G
F
V
DD
= 26 Vdc
f = 800−960 MHz
80
100
0.30
1.9
120
0
−40
−20
0
20
40
60
TEMPERATURE (°C)
0.20
120
Figure 5. Phase
(1)
, Group Delay
(1)
versus Temperature
1. In Production Test Fixture
Figure 6. Gain Flatness, Phase Linearity
versus Temperature
MHL9236N
2
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
31.7
31.5
G p , POWER GAIN (dB)
31.3
31.1
30.9
G
p
f = 880 MHz
T
C
= 25°C
700
650
I
DD
600
ITO (dBm)
I DD (mA)
550
500
450
400
30
42
40
22
P1dB (dBm)
G F , GAIN FLATNESS (dB)
46
44
P1dB
f = 880 MHz
T
C
= 25°C
24
26
VOLTAGE (VOLTS)
28
30
33
32
35
34
50
48
36
ITO
30.7
30.5
22
24
26
VOLTAGE (VOLTS)
28
Figure 7. Power Gain, I
DD
versus Voltage
Figure 8. ITO, P1dB versus Voltage
−433
2.04
0.50
0.45
PHASE LINEARITY(
°)
GROUP DELAY (nS)
0.11
0.10
G
F
0.09
0.08
0.07
f = 800−960 MHz
T
C
= 25°C
24
26
VOLTAGE (VOLTS)
28
30
0.06
0.05
−433.5
PHASE (
°)
2.03
0.40
0.35
0.30
0.25
−434
GROUP DELAY
PHASE
2.02
PHASE LINEARITY
−434.5
f = 880 MHz
T
C
= 25°C
−435
22
24
26
VOLTAGE (VOLTS)
28
2.01
2.00
30
0.20
22
Figure 9. Phase
(1)
, Group Delay
(1)
versus Voltage
1. In Production Test Fixture
Figure 10. Phase Linearity, Gain Flatness
versus Voltage
MHL9236N
RF Device Data
Freescale Semiconductor
3
PACKAGE DIMENSIONS
A
G
0.020 (0.51)
M
A
S
2X
Q
0.008 (0.20)
M
T S
M
A
M
T A
M
B
R
J
K
W
4X
1
2
3
4
S
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION "F" TO CENTER OF LEADS.
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
W
STYLE 1:
PIN 1.
2.
3.
4.
CASE:
INCHES
MIN
MAX
1.760
1.780
1.370
1.390
0.245
0.265
0.017
0.023
0.080
0.100
0.086 BSC
1.650 BSC
1.290 BSC
0.266
0.280
0.125
0.165
0.990 BSC
0.390 BSC
0.008
0.013
0.118
0.132
0.535
0.555
0.445
0.465
0.090 BSC
MILLIMETERS
MIN
MAX
44.70
45.21
34.80
35.31
6.22
6.73
0.43
0.58
2.03
2.54
2.18 BSC
41.91 BSC
32.77 BSC
6.76
7.11
3.18
4.19
25.15 BSC
9.91 BSC
0.20
0.33
3.00
3.35
13.59
14.10
11.30
11.81
2.29 BSC
D
M
N
L
H
F
E
C
T
SEATING
PLANE
M
0.020 (0.51)
M
T B
4X
P
0.020 (0.51)
T
RF INPUT
VDD1
VDD2
RF OUTPUT
GROUND
CASE 301AP - 02
ISSUE E
MHL9236N
4
RF Device Data
Freescale Semiconductor
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©
Freescale Semiconductor, Inc. 2006. All rights reserved.
MHL9236N
Document Number:
RF Device Data
MHL9236N
Rev. 8, 8/2006
Freescale Semiconductor
5
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