MOC303XM, MOC304XM — 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output (250/400 Volt Peak)
September 2010
MOC3031M, MOC3032M, MOC3033M,
MOC3041M, MOC3042M, MOC3043M
6-Pin DIP Zero-Cross Optoisolators Triac Driver Output
(250/400 Volt Peak)
Features
■
Simplifies logic control of 115 VAC power
■
Zero voltage crossing
■
dv/dt of 2000 V/µs typical, 1000 V/µs guaranteed
■
VDE recognized (File # 94766), ordering option V
Description
The MOC303XM and MOC304XM devices consist of a
GaAs infrared emitting diode optically coupled to a
monolithic silicon detector performing the function of a
zero voltage crossing bilateral triac driver.
They are designed for use with a triac in the interface of
logic systems to equipment powered from 115 VAC
lines, such as teletypewriters, CRTs, solid-state relays,
industrial controls, printers, motors, solenoids and
consumer appliances, etc.
(e.g., MOC3043VM)
Applications
■
Solenoid/valve controls
■
Lighting controls
■
Static power switches
■
AC motor drives
■
Temperature controls
■
E.M. contactors
■
AC motor starters
■
Solid state relays
Schematic
Package Outlines
ANODE 1
6 MAIN TERM.
CATHODE 2
ZERO
CROSSING
CIRCUIT
5 NC*
N/C 3
4 MAIN TERM.
*DO NOT CONNECT
(TRIAC SUBSTRATE)
©2005 Fairchild Semiconductor Corporation
MOC303XM, MOC304XM Rev. 1.0.7
www.fairchildsemi.com
MOC303XM, MOC304XM — 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output (250/400 Volt Peak)
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise noted)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
T
J
V
ISO
P
D
EMITTER
I
F
V
R
P
D
DETECTOR
V
DRM
I
TSM
P
D
Parameters
Storage Temperature
Operating Temperature
Lead Solder Temperature
Junction Temperature Range
Isolation Surge Voltage
(1)
(peak AC voltage, 60Hz, 1 sec. duration, I
I-O
≤
2µA)
Total Device Power Dissipation @ 25°C
Derate above 25°C
Device
All
All
All
All
All
All
Value
-40 to +150
-40 to +85
260 for 10
sec
-40 to +100
7500
250
2.94
Units
°C
°C
°C
°C
Vac(pk)
mW
mW/°C
mA
V
mW
mW/°C
V
A
mW
mW/°C
Continuous Forward Current
Reverse Voltage
Total Power Dissipation 25°C Ambient
Derate above 25°C
All
All
All
60
6
120
1.41
Off-State Output Terminal Voltage
Peak Repetitive Surge Current
(PW = 100µs, 120 pps)
Total Power Dissipation @ 25°C Ambient
Derate above 25°C
MOC3031M/2M/3M
MOC3041M/2M/3M
All
All
All
250
400
1
150
1.76
Note
1. Isolation surge voltage, V
ISO
, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are
common, and Pins 4, 5 and 6 are common.
©2005 Fairchild Semiconductor Corporation
MOC303XM, MOC304XM Rev. 1.0.7
2
www.fairchildsemi.com
MOC303XM, MOC304XM — 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output (250/400 Volt Peak)
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified)
Individual Component Characteristics
Symbol
EMITTER
V
F
I
R
DETECTOR
I
DRM1
V
TM
dv/dt
Peak Blocking Current,
Either Direction
Peak On-State Voltage,
Either Direction
Critical Rate of Rise of
Off-State Voltage
Rated V
DRM
, I
F
= 0
(2)
I
TM
= 100mA peak, I
F
= 0
I
F
= 0 (Figure 9)
(4)
All
All
All
1000
1.8
100
3
nA
V
V/µs
Input Forward Voltage
Reverse Leakage Current
I
F
= 30mA
V
R
= 6V
All
All
1.25
0.01
1.5
100
V
µA
Parameters
Test Conditions
Device
Min.
Typ.
Max.
Units
Transfer Characteristics
Symbol
I
FT
DC Characteristics
LED Trigger Current
Test Conditions
Main Terminal
Voltage = 3V
(3)
Device
MOC3031M/
MOC3041M
MOC3032M/
MOC3042M
MOC3033M/
MOC3043M
Min.
Typ.
Max.
15
10
5
Units
mA
I
H
Holding Current,
Either Direction
All
400
µA
Zero Crossing Characteristics
Symbol
V
IH
Characteristics
Inhibit Voltage
Test Conditions
I
F
= rated I
FT
, MT1-MT2
voltage above which device
will not trigger
off-state
I
F
= rated I
FT
, rated V
DRM
off-state
Device
All
Min.
Typ.
Max.
20
Units
V
I
DRM2
Leakage in Inhibited
State
All
2
mA
Notes:
2. Test voltage must be applied within dv/dt rating.
3. All devices are guaranteed to trigger at an I
F
value less than or equal to max I
FT
. Therefore, recommended
operating I
F
lies between max I
FT
(15mA for MOC3031M & MOC3041M, 10mA for MOC3032M & MOC3042M,
5mA for MOC3033M & MOC3043M) and absolute max I
F
(60mA).
4. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
©2005 Fairchild Semiconductor Corporation
MOC303XM, MOC304XM Rev. 1.0.7
3
www.fairchildsemi.com
MOC303XM, MOC304XM — 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output (250/400 Volt Peak)
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Min.
Typ.
Max.
Unit
I-IV
I-IV
55/100/21
2
175
1594
V
peak
CTI
V
PR
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
V
peak
V
IORM
V
IOTM
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
850
6000
7
7
0.5
10
9
V
peak
V
peak
mm
mm
mm
Ω
RIO
Insulation Resistance at Ts, V
IO
= 500V
©2005 Fairchild Semiconductor Corporation
MOC303XM, MOC304XM Rev. 1.0.7
4
www.fairchildsemi.com
MOC303XM, MOC304XM — 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output (250/400 Volt Peak)
Typical Performance Curves
Figure 1. LED Forward Voltage vs. Forward Current
1.6
1.5
800
I
F
= 30mA
Figure 2. On-State Characteristics
600
T
A
= 25°C
I
TM
, ON-STATE CURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.1
T
A
= -40°C
400
200
0
-200
-400
-600
-800
T
A
= 25°C
T
A
= 85°C
1
10
100
-
4
-
3
-
2
-
1
0
1
2
3
4
I
F
- LED FORWARD CURRENT (mA)
V
TM
, ON-STATE VOLTAGE (VOLTS)
Figure 3. Trigger Current vs. Temperature
1.3
10000
Figure 4. Leakage Current, I
DRM
vs. Temperature
I
DRM
, LEAKAGE CURRENT (nA)
1.2
1000
I
FT
, NORMALIZED
1.1
100
1.0
10
0.9
NORMALIZED TO
T
A
= 25
o
C
1
0.8
-40
-20
0
20
40
60
80
100
0.1
-40
-20
0
20
40
60
80
100
T
A
, AMBIENT TEMPERATURE (°C)
T
A
, AMBIENT TEMPERATURE (
o
C)
©2005 Fairchild Semiconductor Corporation
MOC303XM, MOC304XM Rev. 1.0.7
5
www.fairchildsemi.com
能源基础设施
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
