End of Life. Last Available Purchase Date is 31-Dec-2014
Si9913
Vishay Siliconix
Half-Bridge MOSFET Driver for Switching Power Supplies
FEATURES
D
D
D
D
D
D
D
D
D
D
4.5- to 5.5-V Operation
Undervoltage Lockout
250-kHz to 1-MHz Switching Frequency
Synchronous Switch Enable
One Input PWM Signal Generates Both Drive
Bootstrapped High-Side Drive
Operates from 4.5- to 30-V Supply
TTL/CMOS Compatible Input Levels
1-A Peak Drive Current
Break-Before-Make Circuit
APPLICATIONS
D
D
D
D
D
Multiphase Desktop CPU Supplies
Single-Supply Synchronous Buck Converters
Mobile Computing CPU Core Power Converters
Standard-Synchronous Converters
High Frequency Switching Converters
DESCRIPTION
The Si9913 is a dual MOSFET high-speed driver with
break-before-make. It is designed to operate in high frequency
dc-dc switchmode power supplies. The high-side driver is
bootstrapped to handle the high voltage slew rate associated
with “floating” high-side gate drivers. Each driver is capable
of switching a 3000-pF load with 60-ns propogation delay and
25-ns transition time. The Si9913 comes with internal
break-before-make feature to prevent shoot-through current in
the external MOSFETs. A synschronous enable pin is used to
enable the low-side driver. When disabled, the OUT
L
is logic
low.
The Si9913 is available in both standard and lead (Pb)-free 8-pin
SOIC packages for operation over the industrial operation range
(−40_C to 85_C).
FUNCTIONAL BLOCK DIAGRAM
AND TRUTH TABLE
BOOT
V
DD
D1
V
DC
Q
1
OUT
H
C
BOOT
Level Shift
Undervoltage
TRUTH TABLE
V
S
L
L
L
V
S
V
DD
OUTPUT
SYN
L
L
H
H
L
L
H
H
IN
L
H
L
H
L
H
L
H
V
OUTL
L
L
H
L
L
L
L
L
V
OUTH
L
H
L
H
L
H
L
H
IN
SYN
OUT
L
L
Q
2
H
H
H
H
+
−
V
BBM
GND
Document Number: 71343
S-40133—Rev. B, 16-Feb-04
www.vishay.com
1
Si9913
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Low Side Driver Supply Voltage
Input Voltage on IN
Synchronous Pin Voltage
Bootstrap Voltage
High Side Driver (Bootstrap) Supply Voltage
Operating Junction Temperature Range
Storage Temperature Range
Power Dissipation (Note a and b)
Thermal Impedance
Lead Temperature (soldering 10 Sec)
Notes
a. Device mounted with all leads soldered to P.C. Board
b. Derate 8.3 W/_C above 25_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Symbol
V
DD
V
IN
V
SYN
V
BOOT
V
BOOT
−
V
S
T
J
T
stg
P
D
q
JA
Limit
7.0
−0.3
to V
DD
+0.3
−0.3
to V
DD
+0.3
35.0
7.0
−40
to 125
−40
to 150
830
125
300
Unit
V
_C
mW
°C/W
°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Bootstrap Voltage (High-Side Drain Voltage)
Logic Supply
Bootstrap Capacitor
Ambient Temperature
Symbol
V
BOOT
V
DD
C
BOOT
T
A
Limit
4.5 to 30
4.5 to 5.5
100 n to 1
m
−40
to 85
Unit
V
F
_C
SPECIFICATIONS
Test Conditions Unless Specified
Parameter
Power Supplies
V
DD
Supply
I
DD
Supply
I
DD
Supply
I
DD
Supply
I
DD
Supply
I
DD
Supply
I
DD
Supply
Boot Strap Current
V
DD
I
DD1
(en)
I
DD2(en)
I
DD3(dis)
I
DD4(en)
I
DD5(dis)
I
DD(en)
I
DD(dis)
I
BOOT
SYN = H, IN = H, V
S
= 0 V
SYN = H, IN = L, V
S
= 0 V
SYN = L, IN = X, V
S
= V
SYN = H, IN = X, V
S
= 25 V, V
BOOT
= 30 V
SYN = L, IN = X, V
S
= 25 V, V
BOOT
= 30 V
F
IN
= 300 kHz, SYN = High, Driving Si4412DY
F
IN
= 300 kHz, SYN = Low, Driving Si4412DY
V
BOOT
= 30 V, V
S
= 25 V, V
OUTH
= H
0.9
9
5
3
mA
4.5
5.5
1000
500
500
200
200
mA
Limits
Min
a
Typ
b
Max
a
Unit
Symbol
V
BOOT
= 4.5 to 30 V, V
DD
= 4.5 to 5.5 V
T
A
=
−40
to 85_C
Reference Voltage
Break-Before-Make Reference Voltage
V
BBM
1.1
3
V
Logic Inputs (SYN, IN)
Input High
Input Low
V
IH
V
IL
0.7 V
DD
−0.3
V
DD
+ 0.3
0.3 V
DD
V
Undervoltage Lockout
V
DD
Undervoltage
V
DD
Undervoltage Hysteresis
www.vishay.com
V
UVL
V
HYST
V
DD
Rising
3.7
0.4
4.3
V
2
Document Number: 71343
S-40133—Rev. B, 16-Feb-04
Si9913
Vishay Siliconix
SPECIFICATIONS
Test Conditions Unless Specified
Parameter
Bootstrap Diode
Diode Forward Voltage
VF
D1
Forward Current = 100 mA
0.8
1
V
Limits
Min
a
Typ
b
Max
a
Unit
Symbol
V
BOOT
= 4.5 to 30 V, V
DD
= 4.5 to 5.5 V
T
A
=
−40
to 85_C
Output Drive Current
OUT
H
Source Current
OUT
H
Sink Current
OUT
L
Source Current
OUT
L
Sink Current
I
OUT( H+)
I
OUT(H−)
I
OUT (L+)
I
OUT(L−)
V
BOOT
−
V
S
= 3.7 V, V
OUTH
−
V
S
= 2 V
V
BOOT
−
V
S
= 3.7 V, V
OUTH
−
V
S
= 1 V
V
DD
= 4.5 V, V
OUTL
= 2 V
V
DD
= 4.5 V, V
OUTL
= 1 V
0.6
0.4
−0.4
−0.4
A
Timing (C
LOAD
= 3 nF)
OUT
L
Off Propagation Delay
OUT
L
On Propagation Delay
OUT
H
Off Propagation Delay
OUT
H
On Propagation Delay
OUT
L
Turn On Time
OUT
L
Turn Off Time
OUT
H
Turn On Time
OUT
H
Turn Off Time
t
pdl(OUTL)
t
pdh(OUTL)
t
pdl(OUTH)
t
pdh(OUTH)
t
r(OUTL)
t
f(OUTL)
t
r(OUTH)
t
f(OUTH)
V
DD
= 4 5 V
4.5
V
BOOT
−
V
S
= 4 5 V
4.5
OUT
L
= 10 to 90%
OUT
L
= 90 to 10%
OUT
H
−
V
S
= 10 to 90%
OUT
H
−
V
S
= 90 to 10%
30
20
30
20
25
25
30
30
ns
Notes
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
TIMING WAVEFORMS
IN
50%
50%
t
pdh(OUTL)
90%
OUT
L
10%
t
pdl
(
OUTH)
t
f(OUTL)
90%
10%
t
r(OUTL)
t
pdl(OUTL)
OUT
H
t
pdh(OUTH)
t
r(OUTH)
90%
10%
90%
10%
t
f(OUTH)
V
S
Document Number: 71343
S-40133—Rev. B, 16-Feb-04
www.vishay.com
3
Si9913
Vishay Siliconix
PIN CONFIGURATION
SO-8
OUT
H
GND
IN
SYN
1
2
3
4
Top View
8
7
6
5
V
S
BOOT
V
DD
OUT
L
PIN DESCRIPTION
Pin Number
1
2
3
4
5
6
7
8
Name
OUT
H
GND
IN
SYN
OUT
L
V
DD
BOOT
V
S
Output drive for upper MOSFET.
Ground supply
CMOS level input signal. Controls both output drives.
Function
Synchronous enable. When logic is high, the low-side driver is enabled.
Output drive for lower MOSFET.
Input power supply
Floating bootstrap supply for the upper MOSFET
Floating GND for the upper MOSFET. V
S
is connected to the buck switching node and the source side of the upper MOSFET.
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