AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
AUIRFS4127
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
200V
18.6m
22m
72A
G
S
max
I
D
D
S
G
D
2
Pak
AUIRFS4127
G
Gate
D
Drain
S
Source
Base part number
AUIRFS4127
Package Type
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFS4127
AUIRFS4127TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
E
AS
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Max.
72
51
300
375
2.5
± 20
57
250
See Fig. 14, 15, 22a, 22b
-55 to + 175
300(1.6mm from case)
Typ.
–––
–––
Max.
0.4
40
Units
A
W
W/°C
V
V/ns
mJ
A
mJ
°C
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Junction-to-Ambient
R
JA
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
Units
°C/W
1
2015-10-27
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
200
–––
–––
V
––– 0.23 ––– V/°C
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
––– 18.6
22
R
DS(on)
Static Drain-to-Source On-Resistance
m
V
GS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
gfs
Forward Trans conductance
79
–––
–––
S
–––
–––
20
I
DSS
Drain-to-Source Leakage Current
µA
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
––– -100
R
G
Internal Gate Resistance
–––
3.0
–––
AUIRFS4127
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 44A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 50V, I
D
= 44A
V
DS
= 200V, V
GS
= 0V
V
DS
= 200V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge
––– 100 150
I
D
= 44A
V
DS
= 100V
Q
gs
Gate-to-Source Charge
–––
30
–––
nC
V
GS
= 10V
Q
gd
Gate-to-Drain ("Miller") Charge
–––
31
–––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
–––
69
–––
t
d(on)
Turn-On Delay Time
–––
17
–––
V
DD
= 130V
I
D
= 44A
t
r
Rise Time
–––
18
–––
ns
t
d(off)
Turn-Off Delay Time
–––
56
–––
R
G
= 2.7
V
GS
= 10V
Fall Time
–––
22
–––
t
f
C
iss
Input Capacitance
––– 5380 –––
V
GS
= 0V
V
DS
= 50V
C
oss
Output Capacitance
––– 410 –––
C
rss
Reverse Transfer Capacitance
–––
86
–––
pF ƒ = 1.0 MHz (See Fig. 5)
C
oss
eff. (ER) Effective Output Capacitance (Energy Related) ––– 360 –––
V
GS
= 0V, V
DS
= 0V to 160V
C
oss
eff. (TR) Effective Output Capacitance (Time Related)
––– 590 –––
V
GS
= 0V, V
DS
= 0V to 160V
Diode Characteristics
Symbol
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
I
RRM
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.26mH, R
G
= 25, I
AS
= 44A, V
GS
=10V. Part not recommended for use above this value.
44A, di/dt
760A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
I
SD
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.
R
is measured at T
J
approximately 90°C.
JC
value shown is at time zero.
R
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
136
139
458
688
8.3
72
Max. Units
A
300
1.3
–––
–––
–––
–––
–––
V
ns
nC
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 44A, V
GS
= 0V
T
J
= 25°C V
R
= 100V,
T
J
= 125°C I = 44A
F
T
J
= 25°C di/dt = 100A/µs
T
J
= 125°C
T
J
= 25°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
2
2017-03-28
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
AUIRFS4127
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
10
BOTTOM
10
1
4.5V
1
0.1
4.5V
0.01
0.1
1
60µs PULSE WIDTH
Tj = 25°C
10
100
60µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
VDS = 50V
ID, Drain-to-Source Current
)
100
Fig 2.
Typical Output Characteristics
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID = 44A
3.0
60µs PULSE WIDTH
VGS = 10V
2.5
TJ = 175°C
10
2.0
TJ = 25°C
1
1.5
1.0
0.1
3.0
4.0
5.0
6.0
7.0
8.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
8000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
16
VGS, Gate-to-Source Voltage (V)
ID = 44A
12
VDS = 160V
VDS = 100V
VDS = 40V
6000
C, Capacitance (pF)
Ciss
4000
8
2000
C oss
0
1
Crss
10
VDS , Drain-to-Source Voltage (V)
100
4
0
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
2017-03-28
1000
AUIRFS4127
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100µsec
ISD , Reverse Drain Current (A)
100
TJ = 175°C
100
1msec
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
DC
100
1000
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 8.
Maximum Safe Operating Area
260
Id = 5mA
80
60
ID, Drain Current (A)
240
40
220
20
200
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
180
-60 -40 -20 0 20 40 60 80 100 120 140160 180
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
8.0
Fig 10.
Drain-to-Source Breakdown Voltage
1000
EAS, Single Pulse Avalanche Energy (mJ)
800
6.0
8.2A
13A
BOTTOM
44A
TOP
ID
Energy (µJ)
600
4.0
400
2.0
200
0.0
0
40
80
120
160
200
0
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 11.
Typical C
oss
Stored Energy
4
Fig 12.
Maximum Avalanche Energy vs. Drain Current
2017-03-28
1
AUIRFS4127
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 150°C and
Tstart =25°C (Single Pulse)
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14.
Avalanche Current vs. Pulse Width
250
EAR , Avalanche Energy (mJ)
200
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 44A
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
22a, 22b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
= Allowable rise in junction temperature, not to exceed T
jmax
(assumed as 25°C in Figure 14, 15).
t
av
= Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·I
av
) =
T/
Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)·
t
av
2017-03-28
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