74HC2G125; 74HCT2G125
Dual buffer/line driver; 3-state
Rev. 04 — 4 July 2008
Product data sheet
1. General description
The 74HC2G125; 74HCT2G125 is a high-speed, Si-gate CMOS device.
The 74HC2G125; 74HCT2G125 provides two non-inverting buffer/line drivers with 3-state
output. The 3-state output is controlled by the output enable input (pin nOE). A HIGH level
at pin nOE causes the output to assume a high-impedance OFF-state.
The bus driver output currents are equal compared to the 74HC125 and 74HCT125.
2. Features
I
I
I
I
I
I
Wide supply voltage range from 2.0 V to 6.0 V
Symmetrical output impedance
High noise immunity
Low power consumption
Balanced propagation delays
ESD protection:
N
HBM JESD22-A114E exceeds 2000 V
N
MM JESD22-A115-A exceeds 200 V
I
Multiple package options
I
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74HC2G125DP
74HCT2G125DP
74HC2G125DC
74HCT2G125DC
74HC2G125GD
74HCT2G125GD
−40 °C
to +125
°C
XSON8U
−40 °C
to +125
°C
VSSOP8
−40 °C
to +125
°C
TSSOP8
Description
plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
Version
SOT505-2
Type number
plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; UTLP based; body 3
×
2
×
0.5 mm
NXP Semiconductors
74HC2G125; 74HCT2G125
Dual buffer/line driver; 3-state
4. Marking
Table 2.
Marking
Marking code
H25
T25
H25
T25
H25
T25
Type number
74HC2G125DP
74HCT2G125DP
74HC2G125DC
74HCT2G125DC
74HC2G125GD
74HCT2G125GD
5. Functional diagram
2
1A
1Y
6
2
6
1
1OE
1
EN1
1
5
2A
2Y
3
5
7
2
EN2
mce186
A
3
OE
Y
7
2OE
mce185
mna120
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram (one driver)
6. Pinning information
6.1 Pinning
74HC2G125
74HCT2G125
74HC2G125
74HCT2G125
1OE
1A
2Y
GND
1
2
3
4
001aae074
1OE
1A
8
7
6
5
V
CC
2OE
1Y
2A
GND
2Y
1
2
3
4
8
7
6
5
V
CC
2OE
1Y
2A
001aai333
Transparent top view
Fig 4.
Pin configuration SOT505-2 (TSSOP8) and
SOT765-1 (VSSOP8)
Fig 5.
Pin configuration SOT996-2 (XSON8U)
74HC_HCT2G125_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 4 July 2008
2 of 14
NXP Semiconductors
74HC2G125; 74HCT2G125
Dual buffer/line driver; 3-state
6.2 Pin description
Table 3.
Symbol
1OE, 2OE
1A, 2A
GND
1Y, 2Y
V
CC
Pin description
Pin
1, 7
2, 5
4
6, 3
8
Description
output enable input (active LOW)
data input
ground (0 V)
data output
supply voltage
7. Functional description
Table 4.
Control
nOE
L
L
H
[1]
Function table
[1]
Input
nA
L
H
X
Output
nY
L
H
Z
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V
V
O
=
−0.5
V to (V
CC
+ 0.5 V)
[1]
[1]
[1]
Min
−0.5
-
-
-
-
−70
−65
Max
+7.0
±20
±20
35
70
-
+150
300
Unit
V
mA
mA
mA
mA
mA
°C
mW
T
amb
=
−40 °C
to +125
°C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP8 package: above 55
°C
the value of P
tot
derates linearly with 2.5 mW/K.
For VSSOP8 package: above 110
°C
the value of P
tot
derates linearly with 8 mW/K.
For XSON8U package: above 45
°C
the value of P
tot
derates linearly with 2.4 mW/K.
74HC_HCT2G125_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 4 July 2008
3 of 14
NXP Semiconductors
74HC2G125; 74HCT2G125
Dual buffer/line driver; 3-state
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
∆t/∆V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
Min
2.0
0
0
−40
-
-
-
74HC2G125
Typ
5.0
-
-
+25
-
1.67
-
Max
6.0
V
CC
V
CC
+125
625
139
83
Min
4.5
0
0
−40
-
-
-
74HCT2G125
Typ
5.0
-
-
+25
-
1.67
-
Max
5.5
V
CC
V
CC
+125
-
139
-
V
V
V
°C
ns/V
ns/V
ns/V
Unit
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
°
C.
Symbol
Parameter
Conditions
T
amb
=
−40 °C
to +85
°C
T
amb
=
−40 °C
to +125
°C
Unit
Min
74HC2G125
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 2.0 V
I
O
=
−20 µA;
V
CC
= 4.5 V
I
O
=
−20 µA;
V
CC
= 6.0 V
I
O
=
−6.0
mA; V
CC
= 4.5 V
I
O
=
−7.8
mA; V
CC
= 6.0 V
V
OL
LOW-level output V
I
= V
IH
or V
IL
voltage
I
O
= 20
µA;
V
CC
= 2.0 V
I
O
= 20
µA;
V
CC
= 4.5 V
I
O
= 20
µA;
V
CC
= 6.0 V
I
O
= 6.0 mA; V
CC
= 4.5 V
I
O
= 7.8 mA; V
CC
= 6.0 V
I
I
I
OZ
input leakage
current
V
I
= V
CC
or GND; V
CC
= 6.0 V
1.9
4.4
5.9
3.84
5.34
-
-
-
-
-
-
-
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
-
-
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
±1.0
±5.0
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
±1.0
±10
V
V
V
V
V
V
V
V
V
V
µA
µA
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Typ
Max
Min
Max
OFF-state output V
I
= V
IH
or V
IL
;
current
V
O
= V
CC
or GND; V
CC
= 6.0 V
74HC_HCT2G125_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 4 July 2008
4 of 14
NXP Semiconductors
74HC2G125; 74HCT2G125
Dual buffer/line driver; 3-state
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
°
C.
Symbol
I
CC
C
I
C
O
Parameter
supply current
input capacitance
output
capacitance
HIGH-level input
voltage
LOW-level input
voltage
HIGH-level
output voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
=
−20 µA
I
O
=
−6.0
mA
V
OL
LOW-level output V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
voltage
I
O
= 20
µA
I
O
= 6.0 mA
I
I
I
OZ
I
CC
∆I
CC
C
I
C
O
input leakage
current
V
I
= V
CC
or GND; V
CC
= 5.5 V
4.4
3.84
-
-
-
-
-
-
-
-
4.5
4.32
0
0.16
-
-
-
-
1.0
1.5
-
-
0.1
0.33
±1.0
±5.0
10
375
-
-
4.4
3.7
-
-
-
-
-
-
-
-
-
-
0.1
0.4
±1.0
±10
20
410
-
-
µA
µA
pF
pF
V
V
V
V
µA
Conditions
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
T
amb
=
−40 °C
to +85
°C
T
amb
=
−40 °C
to +125
°C
Unit
Min
-
-
-
Typ
-
1.0
1.5
Max
10
-
-
Min
-
-
-
Max
20
-
-
µA
pF
pF
74HCT2G125
V
IH
V
IL
V
OH
2.0
-
1.6
1.2
-
0.8
2.0
-
-
0.8
V
V
OFF-state output V
I
= V
IH
or V
IL
; V
O
=
current
V
CC
or GND; V
CC
= 5.5 V
supply current
additional supply
current
input capacitance
output
capacitance
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
per input; V
CC
= 4.5 V to 5.5 V;
V
I
= V
CC
−
2.1 V; I
O
= 0 A
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); C
L
= 50 pF unless otherwise specified; for test circuit see
Figure 8.
Symbol Parameter
74HC2G125
t
pd
propagation
delay
nA to nY; see
Figure 6
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
V
CC
= 6.0 V
[2]
Conditions
T
amb
=
−40 °C
to +85
°C
T
amb
=
−40 °C
to +125
°C
Unit
Min
Typ
[1]
Max
Min
Max
-
-
-
-
35
11
10
8
115
23
-
20
-
-
-
-
135
27
-
23
ns
ns
ns
ns
74HC_HCT2G125_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 4 July 2008
5 of 14
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
