74AUP1G04
Low power single inverter gate
Features
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■
■
■
■
■
■
High speed: t
PD
= 4.3 ns (max.) at V
CC
= 2.3 V
Power down protection on inputs and outputs
Balanced propagation delays:
t
PLH
≈
t
PHL
Operating voltage range:
V
CC
(opr) = 1.2 to 3.6 V
Low power dissipation:
I
CC
= 1 µA (max.) at T
A
= 85 °C
Latch-up performance exceeds 300 mA (JESD
78, Class II)
ESD performance:
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)
DFN6L
Applications
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Mobile phones
Personal digital assistants (PDAs)
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Description
The 74AUP1G04 is a low voltage CMOS single
inverter gate fabricated with sub-micron silicon
gate and double-layer metal wiring C
2
MOS
technology. It is ideal for 1.2 to 3.6 V operations
and low power and low noise applications.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2kV ESD immunity and transient excess
voltage.
Table 1.
Device summary
Order code
74AUPG04DTR
74AUPG04GTR
Package
DFN6L (1.2 x 1 mm)
SOT-665 (1.6 x 1.6 mm)
Packing
Tape and reel
Tape and reel
March 2008
Rev 1
1/18
www.st.com
18
Maximum rating
74AUP1G04
2
Maximum rating
Stressing the device above the rating listed in the “absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 4.
Symbol
V
CC
V
I
V
O
V
O
I
IK
I
OK
I
O
I
CC
I
GND
P
D
T
stg
T
L
Supply voltage
DC input voltage
DC output voltage (V
CC
= 0 V)
DC output voltage (high or low state)
DC input diode current
DC output diode current
DC output current
DC supply current per supply pin
DC ground current per supply pin
Power dissipation
Absolute maximum ratings
Parameter
Value
-0.5 to +4.6
-0.5 to +4.6
Storage temperature
Lead temperature (10 sec)
od
operating conditions
r
2.1
Recommended
P
te
le
so
b
O
Table 5.
Recommended operating conditions
Parameter
Symbol
V
CC
V
I
Supply voltage
Input voltage
V
O
Output voltage
T
op
Operating temperature
V
CC
= 3.0 to 3.6 V
dt/dv
Input rise and fall time
V
CC
= 2.3 to 2.7 V
V
CC
= 1.2 to 1.95 V
uc
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t(
O
-
so
b
te
le
r
P
d
o
-0.5 to +4.6
uc
-20
-50
±50
s)
t(
Unit
V
V
V
V
-0.5 to V
CC
+ 0.5
mA
mA
mA
mA
mA
mW
°C
°C
±100
±100
200
-65 to +150
260
Value
1.2 to 3.6
0 to V
CC
0 to V
CC
-40 to 85
10
20
100
Unit
V
V
V
°C
ns/V
ns/V
ns/V
4/18
意法半导体-低功耗射频
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