BFP405
Low Noise Silicon Bipolar RF Transistor
•
For low current applications
•
For oscillators up to 12 GHz
•
Minimum noise figure
NF
min
= 1.25 dB at 1.8 GHz
Outstanding
G
ms
= 23 dB at 1.8 GHz
•
Pb-free (RoHS compliant) and halogen-free package
with visible leads
•
Qualification report according to AEC-Q101 available
3
4
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFP405
Marking
ALs
1=B
Pin Configuration
2=E
3=C
4=E
-
-
Package
SOT343
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
Value
Unit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
4.5
4.1
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
110 °C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
A
T
Stg
15
15
1.5
25
3
75
150
-65 ... 150
-65 ... 150
mW
°C
mA
Junction temperature
Ambient temperature
Storage temperature
1
T
S
is
measured on the emitter lead at the soldering point to the pcb
1
2013-09-19
BFP405
Thermal Resistance
Parameter
Symbol
R
thJS
Value
Unit
Junction - soldering point
1)
530
K/W
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 15 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 5 mA,
V
CE
= 4 V, pulse measured
1
For
Unit
max.
-
10
100
1
130
V
µA
nA
µA
-
typ.
5
-
-
-
95
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4.5
-
-
-
60
the definition of
R
thJS
please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2013-09-19
BFP405
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 10 mA,
V
CE
= 3 V,
f
= 2 GHz
Collector-base capacitance
V
CB
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 2 mA,
V
CE
= 2 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
Power gain, maximum stable
1)
I
C
= 5 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Insertion power gain
V
CE
= 2 V,
I
C
= 5 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Ω
Third order intercept point at output
2)
V
CE
= 2 V,
I
C
= 5 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Ω
1dB compression point at output
I
C
= 5 mA,
V
CE
= 2 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
1
G
Unit
max.
-
0.1
GHz
pF
typ.
25
0.05
f
T
C
cb
18
-
C
ce
-
0.24
-
C
eb
-
0.29
-
NF
min
G
ms
-
-
1.25
23
-
-
dB
dB
|S
21
|
2
14
18.5
-
IP3
-
15
-
dBm
P
-1dB
-
5
-
ms = |S21 /
S
12 |
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
2013-09-19
BFP405
Total power dissipation
P
tot
=
ƒ
(T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
90
mW
10
3
70
60
50
40
30
20
10
0
0
10
2 -7
10
-6
-5
-4
R
thJS
K/W
P
tot
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
30
60
90
°C
150
10
10
10
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
10
1
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
f
= 1MHz
0.3
P
totmax
/P
totDC
pF
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
C
CB
-2
0.2
0.15
0.1
0.05
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
s
10
0
0
0
0.5
1
1.5
2
2.5
3
V
4
t
p
V
CB
4
2013-09-19
BFP405
Transition frequency
f
T
=
ƒ
(I
C
)
f
= 2 GHz
V
CE
= parameter in V
26
GHz
4V
3V
2V
Power gain
G
ma
,
G
ms
, |S
21
|
2
=
ƒ
(f)
V
CE
= 3 V,
I
C
= 5 mA
44
dB
22
20
1.5V
36
32
28
Gms
f
T
18
16
14
12
10
8
6
4
0
4
8
12
16
0.5V
1V
G
24
20
16
12
8
4
22
0
0
1
|S21|²
Gma
mA
2
3
4
5
6
7
8
GHz
10
I
C
f
Power gain
G
ma
,
G
ms
=
ƒ
(I
C
)
V
CE
= 3V
f
= parameter in GHz
40
dB
0.15GHz
Power gain
G
ma
,
G
ms
=
ƒ
(V
CE
)
I
C
= 5 mA
f
= parameter in GHz
40
dB
0.15GHz
32
28
0.45GHz
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
32
28
0.45GHz
0.9GHz
1.5GHz
2.4GHz
G
20
16
12
8
G
24
24
20
16
12
8
3.5GHz
5.5GHz
10GHz
10GHz
4
0
0
4
0
0
4
8
12
16
20
mA
26
1
2
3
4
V
6
I
C
V
CE
5
2013-09-19
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