HiPerFET
TM
Power
MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V
DSS
I
D25
R
DS(on)
IXFK25N90 IXFX25N90
IXFK26N90 IXFX26N90
900V
900V
25A
26A
330mΩ
Ω
300mΩ
Ω
TO-264
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (IXFK)
Mounting force
TO-264
TO-247
(IXFX)
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
T
C
T
C
T
C
= 25°C
= 25°C, pulse width limited by T
JM
= 25°C
= 25°C, pulse width limited by T
JM
25N90
25N90
26N90
26N90
25N90
26N90
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
900
900
±
20
±
30
25
100
26
104
25
26
3
5
560
-55 ... +150
150
-55 ... +150
300
260
1.13/10
20..120 /4.5..27
10
6
V
V
V
V
A
A
A
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
G
D
S
(TAB)
PLUS247
T
C
= 25°C
Features
International standard packages
Avalanche Rated
Low package inductance
Low R
DS(ON)
HDMOS Process
Fast intrinsic diode
Advantages
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ. Max.
900
3.0
5.0
±
200
T
J
= 125°C
25N90
26N90
V
V
nA
Easy to mount
Space savings
High power density
Applications:
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Battery chargers
DC choppers
AC motor drives
Temperature & lighting controls
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= 0.8 • V
DSS
V
GS
= 0V
100
μA
2 mA
330 mΩ
300 mΩ
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2008 IXYS CORPORATION,All rights reserved
DS9855D(12/08)
IXFK25N90 IXFX25N90
IXFK26N90 IXFX26N90
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
Source-Drain Diode
Symbol
I
S
I
SM
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
0.15
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
18
28
8.7
800
300
60
35
130
24
260
70
100
0.22
10.8
1000
375
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
°C/W
°C/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
TO-264 (IXFK) Outline
Characteristic Values
T
J
= 25°C unless otherwise specified)
Min.
Typ.
Max.
25N90
25N90
26N90
26N90
25
100
26
104
1.5
250
1.4
10
A
A
A
A
V
ns
μC
A
V
GS
= 0V
Repetitive, pulse width limited by T
JM
V
GS
= 0V
Repetitive, pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= I
S
, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
PLUS 247
TM
(IXFX) Outline
Note 1:
Pulse test, t
≤
300μs; duty cycle, d
≤
2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
Millimeter
Min.
Max.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
20.80
15.75
5.21
2.54
2.16
1.40
2.13
3.12
0.80
21.34
16.13
Inches
Min.
Max.
.190
.090
.075
.045
.075
.115
.024
.819
.620
.205
.100
.085
.055
.084
.123
.031
.840
.635
5.45 BSC
19.81
3.81
5.59
4.32
20.32
4.32
6.20
4.83
.215 BSC
.780
.150
.220
.170
.800
.170
0.244
.190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFK25N90 IXFX25N90
IXFK26N90 IXFX26N90
Figure 1. Output Characteristics at 25
O
C
20
T J = 25°C V GS = 9V
8V
7V
Figure 2. Extended Output Characteristics at 125
O
C
50
40
T J = 25°C
V GS = 9V
8V
7V
6V
15
I
D
- Amperes
I
D
- Amperes
6V
5V
30
20
5V
10
5
4V
10
4V
0
0
2
4
6
8
10
0
0
4
8
12
16
20
V
DS
- Volts
V
CE
- Volts
Figure 3. R
DS(on)
normalized to 0.5 I
D25
value vs. I
D
30
T J = 125°C
V GS = 9V
8V
7V
Figure 4. Admittance Curves
30
25
25
6V
I
D
- Amperes
I
D
- Amperes
20
15
10
5
0
0
5
10
15
20
5V
20
T
J
= 125 C
O
15
T
J
= 25 C
O
10
5
0
4V
25
2
3
4
5
6
7
V
DS
- Volts
V
GS
- Volts
Figure 5. R
DS(on)
normalized to 0.5 I
D25
value vs. I
D
2.4
2.2
R
DS(ON)
-
Normalized
R
DS(on)
- Normalized
R
DS(ON)
- Normalized
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
10
20
30
40
50
T J = 25°C
T J = 125°C
V GS = 10V
6.
Fig. 6. R
DS(on)
Normalized to
I
D25
value vs. T
J
R
DS(ON)
Normalized to 0.5
0.5 I
D25
Value vs.
Junction Temperature
2.4
2.4
2.2
2.2
2.0
2.0
1.8
1.8
1.6
1.6
1.4
1.4
1.2
1.2
1.0
1.0
0.8
0.8
25
25
50
50
75
75
J
V
GS
GS
10V
=
V
= 10V
I
D
= 26A
I D = 26A
I
D
= 13A
ID = 13A
100
100
125
125
150
150
I
D
- Amperes
Degrees Centigrade
T
J
-
T - Degrees C
© 2008 IXYS CORPORATION,All rights reserved
IXFK25N90 IXFX25N90
IXFK26N90 IXFX26N90
Figure 7. Gate Charge
15
12
V DS = 500 V
I D = 13 A
I G = 10 mA
Figure 8. Capacitance Curves
20000
10000
Ciss
Capacitance - pF
f = 1MHz
V
GS
- Volts
9
6
3
0
0
50
100
150
200
250
300
350
Coss
1000
Crss
100
0
5
10
15
20
25
30
35
40
Gate Charge - nC
V
DS
- Volts
Figure 9. Forward Voltage Drop of the Intrinsic Diode
50
45
40
35
25
IXFN25N90
T J = 125 o C
30
IXFN26N90
I
D
- Amperes
30
25
20
15
10
5
0
I
D
- Amperes
1.5
20
15
10
5
0
-50
T J = 25 o C
0.0
0.3
0.6
0.9
1.2
-25
0
25
50
75
100
125
150
V
SD
- Volts
Case Temperatue -
o
C
0.300
0.100
R(th)
JC
- K/W
0.010
0.001
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Pulse Width - Seconds
Figure 11. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_26N90(9X)12-09-08
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