电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SMBJ12CA-E3-55

产品描述ESD Suppressors / TVS Diodes 600W 12V 5% Bidir
产品类别电路保护   
文件大小105KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

SMBJ12CA-E3-55在线购买

供应商 器件名称 价格 最低购买 库存  
SMBJ12CA-E3-55 - - 点击查看 点击购买

SMBJ12CA-E3-55概述

ESD Suppressors / TVS Diodes 600W 12V 5% Bidir

SMBJ12CA-E3-55规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Vishay(威世)
产品种类
Product Category
ESD Suppressors / TVS Diodes
RoHSDetails
PolarityBidirectional
端接类型
Termination Style
SMD/SMT
Breakdown Voltage14.7 V
Working Voltage12 V
Clamping Voltage19.9 V
封装 / 箱体
Package / Case
DO-214AA-2
Pd-功率耗散
Pd - Power Dissipation
1 W
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C
系列
Packaging
Cut Tape
系列
Packaging
Reel
NumOfPackaging2
工厂包装数量
Factory Pack Quantity
3200
单位重量
Unit Weight
0.003386 oz

文档预览

下载PDF文档
SMBJ3V3
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Uni-directional polarity only
• Peak pulse power: 600 W (10/1000 μs)
• Excellent clamping capability
• Very fast response time
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AA (SMBJ)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units specifically for
protecting 3.3 V supplied sensitive equipment against
transient overvoltages.
4.1 V
3.3 V
600 W
5W
60 A
175 °C
PRIMARY CHARACTERISTICS
V
BR
(uni-directional)
V
WM
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
MECHANICAL DATA
Case:
DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
Uni-directional
DO-214AA (SMBJ)
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
(1)(2)
Peak pulse current with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a 8/20 μs waveform (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
(2)
Power dissipation on infinite heatsink, T
A
= 75 °C
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 1
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PP
I
PPM
I
FSM
P
D
T
J
, T
STG
VALUE
600
50
200
60
5
-65 to +175
UNIT
W
A
A
A
W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V
BR
AT I
T
MIN.
V
SMBJ3V3
KC
4.1
mA
1.0
MAXIMUM
REVERSE
LEAKAGE
CURRENT
I
R
AT V
WM
μA
200
TYPICAL
MAXIMUM MAXIMUM
TYPICAL
JUNCTION
STAND-OFF CLAMPING CLAMPING
TEMPERATURE
CAPACITANCE
VOLTAGE VOLTAGE
VOLTAGE
COEFFICIENT
C
J
AT 0 V
V
C
AT I
PP
V
C
AT I
PPM
V
WM
OF V
BR
1 MHz
10/1000 μs
8/20 μs
V
3.3
V
7.3
A
50
V
10.3
A
200
10
-4
/°C
-5.3
pF
5200
Revision: 13-Dec-13
Document Number: 88940
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
PIC+Proteus电子书讨论
我手头上有一本《单片机C语言程序设计实训100例:基于PIC+Proteus仿真》的书,我网上找了好久,这本书电子版一直找不到。因为这本书的程序代码都是印在书上的,所以打算一张一张扫描出来整理成电 ......
眼大5子 Microchip MCU
RTOS概念和微内核的实现
本帖最后由 jameswangsynnex 于 2015-3-3 19:58 编辑 RTOS概念和微内核的实现 ...
lorant 消费电子
求51单片机控制GPRS模块实现温度的远程控制的程序,GPRS模块最好是封装好的
求51单片机控制GPRS模块实现温度的远程控制的程序,GPRS模块最好是封装好的,那样看起来简单些,拜求!...
1627550352 51单片机
EEWORLD大学堂----十天学会AVR单片机和C语言视频教程
十天学会AVR单片机和C语言视频教程:https://training.eeworld.com.cn/course/4491...
量子阱 单片机
第14章 进程间通信
14.1 引言32014.2 管道32014.3 popen和pclose函数32514.4 协同进程33014.5 FIFO33314.6 系统V IPC33514.6.1 标识符和关键字33614.6.2 许可权结构33714.6.3 结构限制33714.6.4 优点和缺点33714.7 ......
謃塰 Linux开发
5G——下一波人物互联的新浪潮
无论何时何地,互联互通所带来的附加值正在加速互联世界或网络社会的发展。2013年,手机用户占世界人口的96%,而在发达国家中,有74%的人都在使用移动宽带业务。到2019年,无线数据网络流量预计 ......
maylove DSP 与 ARM 处理器

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2532  385  2346  44  20  43  31  47  50  55 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved