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SMCJ150A

产品描述ESD Suppressors / TVS Diodes 150volts 5uA 6.2 Amps Uni-Dir
产品类别分立半导体    二极管   
文件大小265KB,共5页
制造商Bourns
官网地址http://www.bourns.com
标准
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SMCJ150A概述

ESD Suppressors / TVS Diodes 150volts 5uA 6.2 Amps Uni-Dir

SMCJ150A规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Bourns
零件包装代码DO-214AB
包装说明R-PDSO-C2
针数2
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time14 weeks
最大击穿电压192 V
最小击穿电压167 V
击穿电压标称值179.5 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AB
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性UNIDIRECTIONAL
认证状态Not Qualified
最大重复峰值反向电压150 V
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间30

文档预览

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IA
N
Features
n
RoHS compliant*
n
Surface Mount SMC package
n
Standoff Voltage: 5.0 to 495 volts
n
Power Dissipation: 1500 watts
Applications
n
IEC 61000-4-2 ESD (Min. Level 4)
n
IEC 61000-4-4 EFT
n
IEC 61000-4-5 Surge
*R
oH
S
C
OM
PL
T
LE
AD
F
RE
E
SMCJ Transient Voltage Suppressor Diode Series
General Information
Ro VE LEA
HS RS D
C ION FRE
OM S E
PL AR
IA E
NT
*
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components.
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AB (SMC)
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 495 V and Breakdown
Voltage up to 550 V. Typical fast response times are less than 1.0 picosecond for unidirectional devices and less than 5.0 picoseconds for
bidirectional devices from 0 V to Minimum Breakdown Voltage.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their flat configuration
minimizes roll away.
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Peak Forward Surge Current
8.3 ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method)
(Note 3)
Steady State Power Dissipation @ TL = 75 °C
Maximum Instantaneous Forward Voltage @ I
PP
= 100 A
(For Unidirectional Units Only)
Operating Temperature Range
Storage Temperature Range
1.
2.
3.
SMCJ5.0A ~ SMCJ90A
SMCJ100A ~ SMCJ495A
Symbol
P
PK
I
FSM
P
M(AV)
V
F
T
STG
T
J
Value
1500
200
5.0
3.5
5.0
Unit
Watts
Amps
Watts
Volts
°C
°C
Minimum Peak Pulse Power Dissipation (TP = 1 ms)
(Note 1,2)
-55 to +150
-55 to +150
Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
Thermal Resistance Junction to Lead.
8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
How to Order
SMCJ 5.0 CA - H
Package
SMCJ = SMC/DO-214AB
Asia-Pacific:
Tel: +886-2 2562-4117
Email: asiacus@bourns.com
Europe:
Tel: +36 88 520 390
Email: eurocus@bourns.com
The Americas:
Tel: +1-951 781-5500
Email: americus@bourns.com
www.bourns.com
Working Peak Reverse Voltage
5.0 = 5.0 VRWM (Volts)
Suffix
A = 5 % Tolerance Unidirectional Device
CA = 5 % Tolerance Bidirectional Device
Reel
(blank) = 13 inch reel
-H = 7 inch reel
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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