Transistors
2SC5848
Silicon NPN epitaxial planar type
For general amplification
Complementary to
2SA2079
Features
High forward current transfer ratio h
FE
Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package:
0.6
mm
×
1.0
mm (hight
0.39
mm)
3
2
Unit: mm
1
1.00
±0.05
0.60
±0.05
0.39
+0.01
−0.03
0.15
±0.05
0.05
±0.03
0.35
±0.01
0.25
±0.05
0.50
±0.05
0.25
±0.05
1
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
60
50
7
100
200
100
125
–55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
1: Base
2: Emitter
3: Collector
3
0.65
±0.01
2
0.05
±0.03
ML3-N2 Package
Marking Symbol :
3E
Electrical Characteristics
T
a
=
25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2
mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
20
V, I
E
=
0
V
CE
=
10
V, I
B
=
0
V
CE
=
10
V, I
C
=
2
mA
I
C
=
100
mA, I
B
=
10
mA
V
CB
=
10
V, I
E
= –2 mA, f =
200
MHz
V
CB
=
10
V, I
E
=
0,
f =
1
MHz
180
0.1
100
2.2
Min
60
50
7
0.1
100
390
0.3
Typ
Max
Unit
V
V
V
µA
µA
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
Publication date : December
2004
SJC00327AED
1
2SC5848
2SC5848_ P
C
-T
a
P
C
T
a
2SC5848_I
C
-V
CE
I
C
V
CE
2SC5848_I
C
-I
B
I
C
I
B
120
50
T
a
=
25°C
I
B
=
160
µA
140
µA
120
µA
140
120
Collector power dissipation P
C
(mW)
100
V
CE
=
10 V
T
a
=
25°C
Collector current I
C
(mA)
Collector current I
C
(mA)
40
80
60
40
20
0
100
80
60
40
20
0
30
100
µA
80
µA
60
µA
20
10
40
µA
20
µA
0
20
40
60
80
100 120 140
0
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
Ambient temperature T
a
(°C)
2SC5848_I
B
-V
BE
Collector-emitter voltage V
CE
(V)
2SC5848_I
C
-V
BE
Base current I
B
(mA)
2SC5848_V
CE(sat)
-I
C
I
B
V
BE
I
C
V
BE
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
3.5
3.0
V
CE
=
10 V
T
a
=
25°C
120
V
CE
=
10V
100
1
I
C
/ I
B
=
10
Base current I
B
(mA)
2.5
2.0
1.5
1.0
0.5
0
Collector current I
C
(mA)
80
60
40
20
0
T
a
=
75°C
25°C
–25°C
0.1
T
a
=
75°C
–25°C
25°C
0
0.2
0.4
0.6
0.8
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
1
10
100
Base-emitter voltage V
BE
(V)
2SC5848_h
FE
-I
C
Base-emitter voltage V
BE
(V)
2SC5848_C
ob
-V
CB
Collector current I
C
(mA)
h
FE
I
C
C
ob
V
CB
T
a
=
75°C
V
CE
=
10 V
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
350
300
250
–25°C
200
150
100
50
0
10
Forward current transfer ratio h
FE
f
=
1 MHz
T
a
=
25°C
25°C
1
10
100
1 000
1
0
8
16
24
32
40
Collector current I
C
(mA)
Collector-base voltage V
CB
(V)
2
SJC00327AED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
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required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
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tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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