电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

PACDN043

产品描述UNIDIRECTIONAL, 6 ELEMENT, SILICON, TVS DIODE
产品类别半导体    分立半导体   
文件大小174KB,共14页
制造商CALMIRCO
官网地址http://www.calmicro.com/
下载文档 详细参数 全文预览

PACDN043概述

UNIDIRECTIONAL, 6 ELEMENT, SILICON, TVS DIODE

单向, 6 组成, 硅, 瞬态抑制二极管

PACDN043规格参数

参数名称属性值
端子数量8
元件数量6
加工封装描述3 × 3 MM, 0.85 MM HEIGHT, 铅 FREE , SMT, MSOP-8
无铅Yes
欧盟RoHS规范Yes
状态DISCONTINUED
包装形状SQUARE
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式GULL WING
端子涂层镍 钯 金
端子位置
包装材料塑料/环氧树脂
工艺AVALANCHE
结构COMMON ANODE, 6 ELEMENTS
二极管元件材料
最大功耗极限0.5000 W
极性单向
二极管类型TRANS 电压 SUPPRESSOR 二极管
关闭电压6.1 V

PACDN043文档预览

PACDN042/43/44/45/46
Transient Voltage Suppressors / ESD Protectors
Features
Two, three, four, five, or six transient voltage
suppressors
Compact SMT package saves board space and
facilitates layout in space-critical applications
In-system ESD protection to 20kV contact
discharge, per the IEC 61000-4-2 international
standard
Lead-free versions available
Product Description
The family of devices consists of the PACDN042,
PACDN043, PACDN044, PACDN045, and PACDN046.
These devices are transient voltage suppressor arrays
that provide a very high level of protection for sensitive
electronic components which may be subjected to
electrostatic discharge (ESD). The PACDN042/43/44/
45/46 devices are designed and characterized to dissi-
pate safely ESD strikes that exceed IEC 61000-4-2
International Standard Level 4 (8kV contact discharge).
All pins are rated to withstand 20kV ESD pulses using
the IEC 61000-4-2 contact discharge method. Using
the MIL-STD-883D (Method 3015) specification for
Human Body Model (HBM) ESD, all pins are protected
from contact discharges of greater than 30kV.
The PACDN042/43/44/45/46 is available with lead-free
finishing, supporting the current global industry move-
ment to lead free manufacturing.
Applications
ESD protection of PC ports, including USB ports,
serial ports, parallel ports, IEEE1394 ports,
docking ports, proprietary ports, etc.
Protection of interface ports or IC pins which are
exposed to high ESD levels
Electrical Schematic
PACDN042
GND
3
4
PACDN043
3
8
PACDN044T
GND
7
6
GND
5
1
2
1
GND
2
1
GND
2
3
GND
4
SOT23-3
SC70-3
PACDN044Y
5
4
6
SOT-143
PACDN045
5
4
GND
8
TSSOP-8
PACDN046
7
6
5
1
2
GND
3
1
2
GND
3
1
GND
2
3
4
SOT23-5
SC70-5
SOT23-6
SC70-6
MSOP-8
© 2003 California Micro Devices Corp. All rights reserved.
11/26/03
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L
Tel: 408.263.3214
L
Fax: 408.263.7846
L
www.calmicro.com
1
PACDN042/43/44/45/46
PACKAGE / PINOUT DIAGRAMS
Top View
TVS
CATHODE
Top View
TVS
CATHODE
Top View
GND
1
1
1
4
TVS
CATHODE
D042 /
D052
TVS
CATHODE
D42 /
D52
D043 /
D053
3
GND
3
GND
2
TVS
CATHODE
2
TVS
CATHODE
2
3
TVS
CATHODE
3-pin SOT23
Top View
TVS
CATHODE
3-pin SC70
Top View
TVS
CATHODE
TVS
CATHODE
4-pin SOT143
Top View
TVS
CATHODE
GND
TVS
CATHODE
GND
1
5
1
5
1
2
3
4
8
7
6
5
TVS
CATHODE
GND
TVS
CATHODE
GND
PACDN044T /
PACDN044T
PACDN054T
D044 /
D054
4
TVS
CATHODE
D44 /
D54
GND
2
GND
2
TVS
CATHODE
3
TVS
CATHODE
3
4
TVS
CATHODE
TVS
CATHODE
5-pin SOT23
Top View
TVS
CATHODE
5-pin SC70
Top View
TVS
CATHODE
TVS
CATHODE
8-pin TSSOP
Top View
TVS
CATHODE
GND
TVS
CATHODE
TVS
CATHODE
TVS
CATHODE
1
6
1
6
1
8
GND
TVS
CATHODE
TVS
CATHODE
TVS
CATHODE
D046 /
D056
D045 /
D055
D45 /
D55
GND
2
5
TVS
CATHODE
GND
2
5
TVS
CATHODE
2
3
4
7
6
5
TVS
CATHODE
3
4
TVS
CATHODE
TVS
CATHODE
3
4
TVS
CATHODE
6-pin SOT23
6-pin SC70
8-pin MSOP
Note: SOT23, SC70, SOT143, TSSOP, and MSOP packages
may differ in size. These drawings are not to scale.
PIN DESCRIPTIONS
PINS
(Refer to package outline drawings)
(Refer to package outline drawings)
NAME
TVS Cathode
GND
DESCRIPTION
The cathode of the respective TVS diode, which should be
connected to the node requiring transient voltage protection.
The anode of the TVS diodes.
© 2003 California Micro Devices Corp. All rights reserved.
2
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L
Tel: 408.263.3214
L
Fax: 408.263.7846
L
www.calmicro.com
11/26/03
PACDN042/43/44/45/46
Ordering Information
PART NUMBERING INFORMATION
Standard Finish
Ordering Part
Bumps
3
3
4
5
5
6
6
8
8
Package
SOT23-3
SC70-3
SOT143
SOT23-5
SC70-5
SOT23-6
SC70-6
TSSOP
MSOP
Number
1
PACDN042Y3
PACDN042YB3
PACDN043Y4
PACDN044Y5
PACDN044YB5
PACDN045Y6
PACDN045YB6
PACDN044T
PACDN046M
Part Marking
D042
D42
D043
D044
D44
D045
D45
PACDN044T
D046
Lead-free Finish
2
Ordering Part
Number
1
PACDN042Y3R
PACDN042YB3R
PACDN043Y4R
PACDN044Y5R
PACDN044YB5R
PACDN045Y6R
PACDN045YB6R
PACDN044TR
PACDN046MR
Part Marking
D052
D52
D053
D054
D54
D055
D55
PACDN054T
D056
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Storage Temperature Range
Package Power Dissipation
SC70
SOT23-3, SOT23-5, SOT23-6, SOT143
TSSOP, MSOP
RATING
-65 to +150
0.2
0.225
0.5
UNITS
°C
W
W
W
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature
RATING
-40 to +85
UNITS
°C
© 2003 California Micro Devices Corp. All rights reserved.
11/26/03
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L
Tel: 408.263.3214
L
Fax: 408.263.7846
L
www.calmicro.com
3
PACDN042/43/44/45/46
Specifications (cont’d)
ELECTRICAL OPERATING CHARACTERISTICS
SYMBOL PARAMETER
C
V
RSO
Capacitance
Reverse Stand-off Voltage
CONDITIONS
T
A
= 25°C, 2.5VDC, 1MHz
I
R
=10µA, T
A
= 25°C
I
R
=1mA, T
A
= 25°C
I
LEAK
V
SIG
Leakage Current
Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
V
IN
=5.0VDC, T
A
= 25°C
I = 10mA, T
A
= 25°C
I = -10mA, T
A
= 25°C
6.2
-0.4
+30
+20
5.5
6.1
1
6.8
-0.8
100
8
-1.2
MIN
TYP
30
MAX
UNITS
pF
V
V
nA
V
V
kV
kV
V
ESD
ESD Withstand Voltage
Human Body Model, MIL-STD-883,
Notes 1 & 2
Method 3015
Contact Discharge per IEC 61000-4-2 Notes 1 & 2
standard
Clamping Voltage during ESD Discharge
+8kV Discharge
-8kV Discharge
Diode Dynamic Resistance
Forward Conduction
Reverse Conduction
MIL-STD-883D, Method 3015
V
CL
12
-8
1.0
1.4
V
V
R
D
Note 1: Guaranteed by design and characterization.
Note 2: ESD voltage applied between channel pins & ground, one pin at a time; all other channel pins open; all GND pins grounded.
© 2003 California Micro Devices Corp. All rights reserved.
4
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L
Tel: 408.263.3214
L
Fax: 408.263.7846
L
www.calmicro.com
11/26/03
PACDN042/43/44/45/46
Performance Information
Diode Capacitance
Typical diode capacitance with respect to positive TVS cathode voltage (reverse voltage across the diode) is given
in
Figure 1.
Diode Capacitance (pF)
60
50
40
30
20
10
0
0
1
2
3
4
Diode Reverse Voltage (V)
5
Figure 1. Diode Capacitance vs. Reverse Voltage
Typical High Current Diode Characteristics
Measurements are made in pulse mode with a nominal pulse width of 0.7mS.
Typical Input VI Characteristics
(Pulse-mode measurements, pulse width = 0.7mS nominal)
1.6
1.4
1.2
1.0
0.8
0.6
R
D
=
slope
1
Input Current (A)
0.4
0.2
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
R
D
=
slope
1
Input Voltage (V)
© 2003 California Micro Devices Corp. All rights reserved.
11/26/03
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L
Tel: 408.263.3214
L
Fax: 408.263.7846
L
www.calmicro.com
5

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2583  466  618  2205  1540  52  10  13  45  32 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved