Surface Mount RF PIN
Switch Diodes
Technical Data
HSMP-389x Series
HSMP-489x Series
Features
• Unique Configurations in
Surface Mount Packages
– Add Flexibility
– Save Board Space
– Reduce Cost
• Switching
– Low Capacitance
– Low Resistance at Low
Current
• Low Failure in Time (FIT)
Rate
[1]
• Matched Diodes for
Consistent Performance
• Better Thermal
Conductivity for Higher
Power Dissipation
• Lead-free Option Available
Note:
1. For more information see the
Surface Mount PIN Reliability Data
Sheet.
Pin Connections and
Package Marking
1
2
3
6
5
4
Description/Applications
The HSMP-389x series is
optimized for switching applica-
tions where low resistance at low
current and low capacitance are
required. The HSMP-489x series
products feature ultra low
parasitic inductance. These
products are specifically
designed for use at frequencies
which are much higher than the
upper limit for conventional PIN
diodes.
Notes:
1. Package marking provides
orientation, identification, and
date code.
2. See “Electrical Specifications” for
appropriate package marking.
GUx
2
Package Lead Code
Identification, SOT-23/143
(Top View)
SINGLE
SERIES
Package Lead Code
Identification, SOT-323
(Top View)
SINGLE
SERIES
Package Lead Code
Identification, SOT-363
(Top View)
UNCONNECTED
TRIO
6
5
4
DUAL SWITCH
MODEL
6
5
4
#0
COMMON
ANODE
#2
COMMON
CATHODE
B
COMMON
ANODE
C
COMMON
CATHODE
1
2
3
1
2
3
L
LOW
INDUCTANCE
SINGLE
6
5
4
R
SERIES–
SHUNT PAIR
6
5
4
#3
UNCONNECTED
PAIR
#4
DUAL ANODE
E
DUAL ANODE
F
1
2
3
1
2
3
T
HIGH
FREQUENCY
SERIES
U
489B
6
5
4
#5
4890
1
2
3
V
Absolute Maximum Ratings
[1]
T
C
= +25°C
Symbol
I
f
P
IV
T
j
T
stg
θ
jc
Parameter
Forward Current (1
µs
Pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Unit
Amp
V
°C
°C
°C/W
SOT-23/143 SOT-323/363
1
100
150
-65 to 150
500
1
100
150
-65 to 150
150
ESD WARNING:
Handling Precautions Should Be
Taken To Avoid Static Discharge.
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to
the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where
contact is made to the circuit board.
3
Electrical Specifications, T
C
= 25°C, each diode
Part Number
HSMP-
3890
3892
3893
3894
3895
389B
389C
389E
389F
389L
389R
389T
389U
389V
Test Conditions
Package
Marking
Code
G0
[1]
G2
[1]
G3
[1]
G4
[1]
G5
[1]
G0
[2]
G2
[2]
G3
[2]
G4
[2]
GL
[2]
S
[2]
Z
[2]
GU
[2]
GV
[2]
Lead
Code
0
2
3
4
5
B
C
E
F
L
R
T
U
V
Configuration
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Single
Series
Common Anode
Common Cathode
Unconnected Trio
Dual Switch Mode
Low Inductance Single
Series-Shunt Pair
High Frequency Series Pair
Minimum
Maximum
Maximum
Breakdown
Series Resistance Total Capacitance
Voltage V
BR
(V)
R
S
(Ω)
C
T
(pF)
100
2.5
0.30
V
R
= V
BR
Measure
I
R
≤
10
µA
I
F
= 5 mA
f = 100 MHz
V
R
= 5 V
f = 1 MHz
Notes:
1. Package marking code is white.
2. Package is laser marked.
High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes
Part
Package
Number Marking
HSMP- Code
[1]
Configuration
489x
GA
Dual Anode
Test Conditions
Minimum
Breakdown
Voltage
V
BR
(V)
100
V
R
= V
BR
Measure
I
R
≤
10
µA
Maximum
Series
Resistance
R
S
(Ω)
2.5
I
F
= 5 mA
Typical
Total
Capacitance
C
T
(pF)
0.33
f = 1 MHz
V
R
= 5 V
Maximum
Total
Capacitance
C
T
(pF)
0.375
V
R
= 5 V
f = 1 MHz
Typical
Total
Inductance
L
T
(nH)
1.0
f = 500 MHz –
3 GHz
Note:
1. SOT-23 package marking code is white; SOT-323 is laser marked.
Typical Parameters at
T
C
= 25°C
Part Number
HSMP-
389x
Test Conditions
Series Resistance
R
S
(Ω)
3.8
I
F
= 1 mA
f = 100 MHz
Carrier Lifetime
τ
(ns)
200
I
F
= 10 mA
I
R
= 6 mA
Total Capacitance
C
T
(pF)
0.20 @ 5 V
4
HSMP-389x Series Typical Performance, T
C
= 25°C, each diode
100
TOTAL CAPACITANCE (pF)
0.55
0.50
0.45
0.40
0.35
0.30
0.25
1 GHz
0.20
0
4
8
12
16
20
1 MHz
INPUT INTERCEPT POINT (dBm)
120
RF RESISTANCE (OHMS)
10
Diode Mounted as a
Series Attenuator in a
115
50 Ohm Microstrip and
Tested at 123 MHz
110
105
100
95
90
85
1
10
30
I
F
– FORWARD BIAS CURRENT (mA)
1
0.1
0.01
0.1
1
10
100
I
F
– FORWARD BIAS CURRENT (mA)
V
R
– REVERSE VOLTAGE (V)
Figure 1. Total RF Resistance at 25°C
vs. Forward Bias Current.
Figure 2. Capacitance vs. Reverse
Voltage.
Figure 3. 2nd Harmonic Input
Intercept Point vs. Forward Bias
Current.
T
rr
– REVERSE RECOVERY TIME (nS)
200
I
F
– FORWARD CURRENT (mA)
100
160
V
R
= –2V
120
10
1
80
V
R
= –5V
40
V
R
= –10V
0
10
15
20
25
30
0.1
0.01
125°C 25°C –50°C
0
0.2
0.4
0.6
0.8
1.0
1.2
FORWARD CURRENT (mA)
V
F
– FORWARD VOLTAGE (V)
Figure 4. Typical Reverse Recovery
Time vs. Reverse Voltage.
Figure 5. Forward Current vs. Forward
Voltage.
Typical Applications for Multiple Diode Products
1
2
3
3
2
1
1
2
“ON”
“OFF”
1
0
0
2
+V
–V
3
2
1
1
0
4
5
6
b1
b2
b3
RF in
4
5
6
RF out
Figure 6. HSMP-389L used in a SP3T Switch.
Figure 7. HSMP-389L Unconnected Trio used in a
Dual Voltage, High Isolation Switch.
5
Typical Applications for Multiple Diode Products
(continued)
1
+V
0
2
0
+V
“ON”
“OFF”
1
6
5
4
1
RF out
6
5
4
1
RF in
2
3
1
RF out
2
3
RF in
2
Figure 8. HSMP-389L Unconnected Trio used in a
Positive Voltage, High Isolation Switch.
Figure 9. HSMP-389T used in a Low Inductance
Shunt Mounted Switch.
Bias
Xmtr
C
Ant
λ
4
C
Rcvr
Bias
Xmtr
bias
Ant
λ
4
Rcvr
Bias
Antenna
Xmtr
PA
λ
4
HSMP-389V
LNA
HSMP-389U
λ
4
Rcvr
Figure 10. HSMP-389U Series/Shunt Pair used in a
900 MHz Transmit/Receive Switch.
Figure 11. HSMP-389V Series/Shunt Pair used in a
1.8 GHz Transmit/Receive Switch.
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