VS-HFA135NH40PbF
www.vishay.com
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 275 A
FEATURES
Lug terminal
anode
• Very low Q
rr
and t
rr
• Designed and qualified for industrial level
• UL approved file E222165
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
HALF-PAK (D-67)
Base
cathode
BENEFITS
• Reduced RFI and EMI
• Reduced snubbing
PRIMARY CHARACTERISTICS
I
F
(maximum)
V
R
I
F(DC)
at T
C
Package
Circuit configuration
275 A
400 V
138 A at 100 °C
HALF-PAK (D-67)
Single diode
DESCRIPTION
HEXFRED
®
diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Non-repetitive avalanche energy
Maximum power dissipation
Operating junction and storage
temperature range
SYMBOL
V
R
I
F
I
FSM
E
AS
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
Limited by junction temperature
L = 100 μH, duty cycle limited by maximum T
J
T
C
= 25 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
400
275
138
900
1.4
463
185
-55 to +150
mJ
W
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown
voltage
Maximum forward voltage
Maximum reverse leakage current
Junction capacitance
Series inductance
SYMBOL
V
BR
TEST CONDITIONS
I
R
= 100 μA
I
F
= 135 A
V
FM
I
RM
C
T
L
S
I
F
= 270 A
I
F
= 135 A, T
J
= 125 °C
T
J
= 125 °C, V
R
= 400 V
V
R
= 200 V
See fig. 2
See fig. 3
See fig. 1
MIN.
400
-
-
-
-
-
-
TYP.
-
1.06
1.2
0.96
-
280
6.0
MAX.
-
1.65
2.0
1.58
3
380
-
mA
pF
nH
V
UNITS
From top of terminal hole to mounting plane
Revision: 11-Jan-18
Document Number: 94050
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA135NH40PbF
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 135 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
TYP.
77
280
7.5
15
150
2800
350
300
MAX.
120
440
14
30
780
6300
-
-
UNITS
ns
A
nC
A/μs
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of recovery current
See fig. 8
SYMBOL
t
rr
I
RRM
Q
rr
dI
(rec)M
/dt
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Terminal torque
Case style
minimum
maximum
minimum
maximum
HALF-PAK (D-67)
SYMBOL
T
J
,
T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, flat, smooth and greased
TEST CONDITIONS
VALUES
-55 to +150
0.27
°C/W
0.05
30
1.06
3 (26.5)
4 (35.4)
3.4 (30)
5 (44.2)
N·m
(lbf · in)
g
oz.
UNITS
°C
I
F
- Istantaneous Forward Current (A)
1000
10
T
J
= 150 °C
I
R
- Reverse Current (µA)
1
T
J
= 125 °C
0.1
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.01
T
J
= 25 °C
0.001
1
0.2
0.7
1.2
1.7
2.2
2.7
3.2
0.0001
100
200
300
400
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Revision: 11-Jan-18
Document Number: 94050
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA135NH40PbF
www.vishay.com
Vishay Semiconductors
70
60
50
T
J
= 125 °C
T
J
= 25 °C
10 000
C
T
- Junction Capacitance (pF)
I
RRM
(A)
40
30
20
10
1000
T
J
= 25 °C
I
F
= 200 A
I
F
= 135 A
I
F
= 50 A
100
1
10
100
1000
0
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
dI
F
/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
Maximum Allowable Case Temperature (°C)
160
140
120
6000
5000
4000
DC
T
J
= 125 °C
T
J
= 25 °C
80
60
40
20
0
0
50
100
150
Q
rr
(nC)
100
I
F
= 200 A
I
F
= 135 A
I
F
= 50 A
3000
2000
1000
0
100
200
250
300
350
1000
I
F(AV)
- DC Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature vs.
DC Forward Current
dI
F
/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
450
400
350
300
T
J
= 125 °C
T
J
= 25 °C
10 000
250
200
150
100
50
0
100
1000
dI
(rec)M
/dt (A/µs)
I
F
= 200 A
I
F
= 135 A
I
F
= 50 A
200 A
135 A
50 A
t
rr
(ns)
1000
T
J
= 125 °C
T
J
= 25 °C
100
100
1000
dI
F
/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt
Revision: 11-Jan-18
Document Number: 94050
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA135NH40PbF
www.vishay.com
Vishay Semiconductors
1
Z
thJC
- Thermal Response
0.1
0.01
Single pulse
(thermal response)
0.001
0.00001
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 9 - Maximum Thermal Impedance Z
thJC
Characteristics
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 11-Jan-18
Document Number: 94050
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA135NH40PbF
www.vishay.com
Vishay Semiconductors
I
L(PK)
High-speed
switch
L = 100 µH
D.U.T.
R
g
= 25
Ω
Current
monitor
Freewheel
diode
+
V
d
= 50 V
V
(AVAL)
V
R(RATED)
Decay
time
Fig. 12 - Avalanche Test Circuit and Waveforms
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
HFA
2
135
3
N
4
H
5
40
6
PbF
7
Vishay Semiconductors product
HEXFRED
®
family
Average current rating
N = not isolated
H = HALF-PAK (D-67)
Voltage rating (400 V)
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95020
Revision: 11-Jan-18
Document Number: 94050
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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