IS61C6416AL

IS62C6416AL

IS64C6416AL

IS65C6416AL

ISSI

JUNE 2005

®

64K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES

IS61C6416AL and IS64C6416AL

• High-speed access time: 12 ns, 15ns

• Low Active Power: 175 mW (typical)

• Low Standby Power: 1 mW (typical)

CMOS standby

IS62C6416AL and IS65C6416AL

• High-speed access time: 35 ns, 45ns

• Low Active Power: 50 mW (typical)

• Low Standby Power: 100 µW (typical)

CMOS standby

• TTL compatible interface levels

• Single 5V ± 10% power supply

• Fully static operation: no clock or refresh

required

• Available in 44-pin SOJ package and

44-pin TSOP (Type II)

• Commercial, Industrial and Automotive tempera-

ture ranges available

• Lead-free available

DESCRIPTION

The

ISSI

IS61C6416AL, IS62C6416AL, IS64C6416AL and

IS65C6416AL are high-speed, 1,048,576-bit static RAMs

organized as 65,536 words by 16 bits. They are fabricated

using

ISSI

's high-performance CMOS technology. This highly

reliable process coupled with innovative circuit design tech-

niques, yields access times as fast as 12 ns with low power

consumption.

When

CE

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be reduced

down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs,

CE

and

OE.

The active LOW Write

Enable (WE) controls both writing and reading of the memory.

A data byte allows Upper Byte (UB) and Lower Byte (LB)

access.

The IS61C6416AL, IS62C6416AL, IS64C6416AL and

IS65C6416AL are packaged in the JEDEC standard 44-pin

400-mil SOJ and 44-pin TSOP (Type II).

FUNCTIONAL BLOCK DIAGRAM

A0-A15

DECODER

64K x 16

MEMORY ARRAY

VDD

GND

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

I/O

DATA

CIRCUIT

COLUMN I/O

CE

OE

WE

UB

LB

CONTROL

CIRCUIT

Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any

published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. B

06/08/05

1

IS61C6416AL

IS62C6416AL

IS64C6416AL

IS65C6416AL

ISSI

®

PIN CONFIGURATIONS

44-Pin SOJ

A15

A14

A13

A12

A11

CE

I/O0

I/O1

I/O2

I/O3

VDD

GND

I/O4

I/O5

I/O6

I/O7

WE

A10

A9

A8

A7

NC

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

A0

A1

A2

OE

UB

LB

I/O15

I/O14

I/O13

I/O12

GND

VDD

I/O11

I/O10

I/O9

I/O8

NC

A3

A4

A5

A6

NC

44-Pin TSOP (Type II)

A15

A14

A13

A12

A11

CE

I/O0

I/O1

I/O2

I/O3

VDD

GND

I/O4

I/O5

I/O6

I/O7

WE

A10

A9

A8

A7

NC

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

A0

A1

A2

OE

UB

LB

I/O15

I/O14

I/O13

I/O12

GND

VDD

I/O11

I/O10

I/O9

I/O8

NC

A3

A4

A5

A6

NC

PIN DESCRIPTIONS

A0-A15

I/O0-I/O15

CE

OE

WE

Address Inputs

Data Inputs/Outputs

Chip Enable Input

Output Enable Input

Write Enable Input

LB

UB

NC

V

DD

GND

Lower-byte Control (I/O0-I/O7)

Upper-byte Control (I/O8-I/O15)

No Connection

Power

Ground

2

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. B

06/08/05

IS61C6416AL

IS62C6416AL

TRUTH TABLE

Mode

Not Selected

Output Disabled

Read

IS64C6416AL

IS65C6416AL

ISSI

LB

X

H

L

H

L

H

L

UB

X

H

L

H

L

I/O PIN

I/O0-I/O7

I/O8-I/O15

High-Z

D

OUT

High-Z

D

OUT

D

IN

High-Z

D

IN

High-Z

D

OUT

D

OUT

High-Z

D

IN

D

IN

V

DD

Current

I

SB

1

, I

SB

2

I

CC

1

, I

CC

2

I

CC

1

, I

CC

2

®

WE

X

H

X

H

L

CE

H

L

OE

X

H

X

L

X

Write

I

CC

1

, I

CC

2

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

V

TERM

T

STG

P

T

I

OUT

Parameter

Terminal Voltage with Respect to GND

Storage Temperature

Power Dissipation

DC Output Current (LOW)

Value

–0.5 to +7.0

–65 to +150

1.5

20

Unit

V

°C

W

mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation

of the device at these or any other conditions above those indicated in the opera-

tional sections of this specification is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect reliability.

OPERATING RANGE (IS61C/62C6416AL)

Range

Commercial

Industrial

Ambient Temperature

0°C to +70°C

-40°C to +85°C

V

DD

5V ± 10%

OPERATING RANGE (IS64C/65C6416AL)

Range

Automotive

Ambient Temperature

-40°C to +125°C

V

DD

5V ± 10%

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. B

06/08/05

3

IS61C6416AL

IS62C6416AL

CAPACITANCE

(1,2)

Symbol

C

IN

C

OUT

IS64C6416AL

IS65C6416AL

ISSI

Conditions

V

IN

= 0V

V

OUT

= 0V

Max.

5

7

Unit

pF

®

Parameter

Input Capacitance

Output Capacitance

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: T

A

= 25°C, f = 1 MHz, V

DD

= 5.0V.

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

Symbol Parameter

V

OH

V

OL

V

IH

V

IL

I

LI

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

Input LOW Voltage

(1)

Input Leakage

GND

≤

V

IN

≤

V

DD

Com.

Ind.

Auto.

Com.

Ind.

Auto.

Test Conditions

V

DD

= Min., I

OH

= –4.0 mA

V

DD

= Min., I

OL

= 8.0 mA

Min.

2.4

—

2.2

–0.3

–1

–2

–5

–1

–2

–5

Max.

—

0.4

V

DD

+ 0.5

0.8

1

2

5

1

2

5

Unit

V

µA

I

LO

Output Leakage

GND

≤

V

OUT

≤

V

DD

Outputs Disabled

µA

Note:

1. V

IL

= –3.0V for pulse width less than 10 ns.

4

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. B

06/08/05

IS61C6416AL

IS62C6416AL

IS64C6416AL

IS65C6416AL

ISSI

-12 ns

Min. Max.

Com.

Ind.

Auto.

Com.

Ind.

Auto.

typ.

(2)

Com.

Ind.

Auto.

Com.

Ind.

Auto.

typ.

(2)

—

40

45

—

50

55

—

35

1

—

350

400

—

200

450

1

µA

mA

60

50

mA

-15 ns

Min. Max.

Unit

mA

®

IS61C6416AL/IS64C6416AL

POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

Symbol Parameter

I

CC

1

V

DD

Operating

Supply Current

V

DD

Dynamic Operating

Supply Current

Test Conditions

V

DD

= V

DD MAX

.,

CE

= V

IL

I

OUT

= 0 mA, f = 0

V

DD

= V

DD MAX

.,

CE

= V

IL

I

OUT

= 0 mA, f = f

MAX

I

CC

2

I

SB

1

TTL Standby Current

(TTL Inputs)

V

DD

= V

DD MAX

.,

V

IN

= V

IH

or V

IL

CE

≥

V

IH

, f = 0

V

DD

= V

DD MAX

.,

CE

≤

V

DD

– 0.2V,

V

IN

≥

V

DD

– 0.2V, or

V

IN

≤

0.2V, f = 0

I

SB

2

CMOS Standby

Current (CMOS Inputs)

Note:

1. At f = f

MAX

, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at V

DD

= 5V, T

A

= 25% and not 100% tested.

IS62C6416AL/IS65C6416AL

POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

Symbol Parameter

I

CC

Average operating

Current

V

DD

Dynamic Operating

Supply Current

TTL Standby Current

(TTL Inputs)

CMOS Standby

Current (CMOS Inputs)

Test Conditions

CE

= V

IL

,

V

IN

= V

IH

or V

IL

,

I

I/O

= 0 mA

V

DD

= Max.,

CE

= V

IL

I

OUT

= 0 mA, f = f

MAX

V

IN

= V

IH

or V

IL

V

DD

= Max.,

V

IN

= V

IH

or V

IL

,

CE

≥

V

IH

,

f=0

V

DD

= Max.,

CE

≥

V

DD

– 0.2V,

V

IN

≥

V

DD

– 0.2V,

or V

IN

≤

V

SS

+ 0.2V, f = 0

Com.

Ind.

Auto.

Com.

Ind.

Auto.

Com.

Ind.

Auto.

Com.

Ind.

Auto.

-35 ns

Min. Max.

—

10

15

—

35

40

—

1

1.5

—

5

10

—

15

2

µA

45

mA

20

mA

-45 ns

Min. Max.

Unit

mA

I

CC

1

I

SB

1

I

SB

2

Note:

1. At f = f

MAX

, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. B

06/08/05

5

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	ISSI(芯成半导体)
产品种类 Product Category	SRAM
RoHS	Details
Memory Size	1 Mbit
Organization	64 k x 16
Access Time	12 ns
接口类型 Interface Type	Parallel
电源电压-最大 Supply Voltage - Max	5.5 V
电源电压-最小 Supply Voltage - Min	4.5 V
Supply Current - Max	45 mA
最小工作温度 Minimum Operating Temperature	- 40 C
最大工作温度 Maximum Operating Temperature	+ 85 C
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	SOJ-44
系列 Packaging	Tube
数据速率 Data Rate	SDR
类型 Type	Asynchronous
Number of Ports	1
Moisture Sensitive	Yes
NumOfPackaging	1
工厂包装数量 Factory Pack Quantity	16

IS61C6416AL-12KLI

IS61C6416AL-12KLI在线购买

IS61C6416AL-12KLI概述

IS61C6416AL-12KLI规格参数

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