MOSFET N-channel 60 V 15 mo FET
| 参数名称 | 属性值 |
| Product Attribute | Attribute Value |
| 制造商 Manufacturer | NXP(恩智浦) |
| 产品种类 Product Category | MOSFET |
| RoHS | Details |
| 技术 Technology | Si |
| 安装风格 Mounting Style | SMD/SMT |
| 封装 / 箱体 Package / Case | LFPAK56-5 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 53 A |
| Rds On - Drain-Source Resistance | 9.6 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 25.41 nC |
| 最小工作温度 Minimum Operating Temperature | - 55 C |
| 最大工作温度 Maximum Operating Temperature | + 175 C |
| Configuration | Single |
| Pd-功率耗散 Pd - Power Dissipation | 94 W |
| Channel Mode | Enhancement |
| 系列 Packaging | Reel |
| Transistor Type | 1 N-Channel |
| Fall Time | 10.9 ns |
| NumOfPackaging | 1 |
| Rise Time | 9.9 ns |
| 工厂包装数量 Factory Pack Quantity | 1500 |
| Typical Turn-Off Delay Time | 17.8 ns |
| Typical Turn-On Delay Time | 7.4 ns |
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