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MR0A08BSO35

产品描述NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
产品类别存储   
文件大小1MB,共23页
制造商Everspin
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MR0A08BSO35概述

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM

MR0A08BSO35规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Everspin
产品种类
Product Category
NVRAM
RoHSDetails
封装 / 箱体
Package / Case
SOIC-32
接口类型
Interface Type
Parallel
Memory Size1 Mbit
Organization128 k x 8
Data Bus Width8 bit
Access Time35 ns
电源电压-最大
Supply Voltage - Max
3.6 V
电源电压-最小
Supply Voltage - Min
3 V
工作电源电流
Operating Supply Current
55 mA
最小工作温度
Minimum Operating Temperature
0 C
最大工作温度
Maximum Operating Temperature
+ 70 C
系列
Packaging
Tray
安装风格
Mounting Style
SMD/SMT
Moisture SensitiveYes
NumOfPackaging1
工厂包装数量
Factory Pack Quantity
108
单位重量
Unit Weight
0.027023 oz

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MR0A08B
FEATURES
3.3 Volt power supply
Fast 35 ns read/write cycle
SRAM compatible timing
Native non-volatility
Unlimited read & write endurance
Data always non-volatile for >20 years at temperature
Commercial and industrial temperatures
All products meet MSL-3 moisture sensitivity level
RoHS-Compliant TSOP2 and BGA packages
128K x 8 MRAM
48-ball FBGA
BENEFITS
One memory replaces FLASH, SRAM, EEPROM and
MRAM in system for simpler, more efficient design
Improves reliability by replacing battery-backed
SRAM
INTRODUCTION
44-pin TSOP2
The
MR0A08B
is a 1,048,576-bit magnetoresistive random access
memory (MRAM) device organized as 131,072 words of 8 bits. The
MR0A08B offers SRAM compatible 35 ns read/write timing with unlim-
ited endurance.
Data is always non-volatile for greater than 20-years. Data is automatically protected on
power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
The MR0A08B is the ideal memory solution for applications that must permanently store and
retrieve critical data and programs quickly.
The
MR0A08B
is available in small footprint 400-mil, 44-lead plastic small-outline TSOP
type-2 package, 8 mm x 8 mm, or a 48-pin ball grid array (BGA) package with 0.75 mm ball
centers. (The 32-SOIC package options is obsolete and no longer available for new orders.)
These packages are compatible with similar low-power SRAM products and other non-vola-
tile RAM products.
The
MR0A08B
provides highly reliable data storage over a wide range of temperatures. The
product is offered with commercial temperature range (0 to +70 °C) and industrial tempera-
ture range (-40 to +85 °C).
RoHS
Copyright © 2015 Everspin Technologies
1
MR0A08B Rev. 8.5, 12/2015

MR0A08BSO35相似产品对比

MR0A08BSO35 MR0A08BYS35 MR0A08BMA35
描述 NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
Product Attribute Attribute Value Attribute Value Attribute Value
制造商
Manufacturer
Everspin Everspin Everspin
产品种类
Product Category
NVRAM NVRAM NVRAM
RoHS Details Details Details
封装 / 箱体
Package / Case
SOIC-32 TSOP-44 BGA-48
接口类型
Interface Type
Parallel Parallel Parallel
Memory Size 1 Mbit 1 Mbit 1 Mbit
Organization 128 k x 8 128 k x 8 128 k x 8
Data Bus Width 8 bit 8 bit 8 bit
Access Time 35 ns 35 ns 35 ns
电源电压-最大
Supply Voltage - Max
3.6 V 3.6 V 3.6 V
电源电压-最小
Supply Voltage - Min
3 V 3 V 3 V
工作电源电流
Operating Supply Current
55 mA 55 mA 55 mA
最小工作温度
Minimum Operating Temperature
0 C 0 C - 40 C
最大工作温度
Maximum Operating Temperature
+ 70 C + 70 C + 125 C
系列
Packaging
Tray Tray Tray
安装风格
Mounting Style
SMD/SMT SMD/SMT SMD/SMT
Moisture Sensitive Yes Yes Yes
NumOfPackaging 1 1 1
工厂包装数量
Factory Pack Quantity
108 135 348

 
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