SUP/SUB65P06-20
Vishay Siliconix
P-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
–60
r
DS(on)
(W)
0.020
I
D
(A)
–65
a
TO-220AB
S
TO-263
G
DRAIN connected to TAB
G D S
Top View
SUP65P06-20
G
D S
D
Top View
SUB65P06-20
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 125_C (TO-263)
c
P
D
T
J
, T
stg
T
C
= 25_C
T
C
= 125_C
I
D
I
DM
I
AR
E
AR
Symbol
V
GS
Limit
"20
–65
a
–39
–200
–60
180
250
d
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
c
Junction-to-Ambient
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle
v
1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
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Document Number: 70289
S-05111—Rev. C, 10-Dec-01
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Free Air (TO-220AB)
Symbol
R
thJA
R
thJA
R
thJC
Limit
40
62.5
0.6
Unit
_C/W
2-1
SUP/SUB65P06-20
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= –250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –60 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –60 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= –60 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
= –5 V, V
GS
= –10 V
V
GS
= –10 V, I
D
= –30 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –10 V, I
D
= –30 A, T
J
= 125_C
V
GS
= –10 V, I
D
= –30 A, T
J
= 175_C
Forward Transconductance
a
g
fs
V
DS
= –15 V, I
D
= –30 A
25
–120
0.017
0.020
0.033
0.042
S
W
–60
–2.0
–3.0
–4.0
"100
–1
–50
–150
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –30 V, R
L
= 0.47
W
I
D
]
–65 A, V
GEN
= –10 V, R
G
= 2.5
W
V
DS
= –30 V, V
GS
= –10 V, I
D
= –65 A
V
GS
= 0 V, V
DS
= –25 V, f = 1 MHz
4500
870
350
85
24
22
15
40
65
30
40
80
120
60
ns
120
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
s
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= –65 A, di/dt = 100 A/ms
m
I
F
= –65 A, V
GS
= 0 V
–1.1
70
7
0.245
–65
A
–200
–1.4
120
9
0.54
V
ns
A
mC
Notes:
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing
d. Independent of operating temperature.
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FaxBack 408-970-5600
2-2
Document Number: 70289
S-05111—Rev. C, 10-Dec-01
SUP/SUB65P06-20
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
200
V
GS
= 10, 9, 8 V
7V
160
I D – Drain Current (A)
I D – Drain Current (A)
160
25_C
125_C
120
T
C
= –55_C
200
Transfer Characteristics
120
6V
80
5V
40
4V
0
0
2
4
6
8
10
80
40
0
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
100
0.030
On-Resistance vs. Drain Current
80
g fs – Transconductance (S)
T
C
= –55_C
r DS(on)– On-Resistance (
W
)
0.025
25_C
60
125_C
40
0.020
V
GS
= 10 V
0.015
V
GS
= 20 V
0.010
20
0.005
0
0
20
40
60
80
100
0.000
0
20
40
60
80
100
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
Capacitance
6000
20
Gate Charge
V GS – Gate-to-Source Voltage (V)
5000
C – Capacitance (pF)
C
iss
16
V
DS
= 30 V
I
D
= 65 A
4000
12
3000
8
2000
C
oss
1000
C
rss
4
0
0
10
20
30
40
50
60
0
0
25
50
75
100
125
150
175
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Document Number: 70289
S-05111—Rev. C, 10-Dec-01
www.vishay.com
2-3
SUP/SUB65P06-20
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V
GS
= 10 V
I
D
= 30 A
r DS(on)– On-Resistance (
W
)
(Normalized)
2.0
I S – Source Current (A)
T
J
= 150_C
T
J
= 25_C
10
100
Source-Drain Diode Forward Voltage
1.5
1.0
0.5
0.0
–50
1
–25
0
25
50
75
100
125
150
175
0.3
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
80
500
10
ms
100
ms
1 ms
10
10 ms
100 ms
dc
1
T
C
= 25_C
Single Pulse
Safe Operating Area
100
60
I D – Drain Current (A)
I D – Drain Current (A)
Limited by r
DS(on)
40
20
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
T
C
– Case Temperature (_C)
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–5
10
–4
10
–3
10
–2
10
–1
1
3
Square Wave Pulse Duration (sec)
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S
FaxBack 408-970-5600
Document Number: 70289
S-05111—Rev. C, 10-Dec-01
2-4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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