PN2907A
Preferred Device
General Purpose Transistor
PNP Silicon
Features
•
These are Pb-Free Devices*
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
-60
-60
-5.0
-600
625
5.0
1.5
12
- 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
TO-92
CASE 29
STYLE 1
12
1
1
EMITTER
2
BASE
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction- to- Ambient
Thermal Resistance, Junction-to-Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
PN2
907A
YWW
G
G
PN2907A
Y
WW
G
= Device Code
= Year
= Work Week
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
1
May, 2007 - Rev. 3
Publication Order Number:
PN2907A/D
PN2907A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 1)
(I
C
= -10 mAdc, I
B
= 0)
Collector-Base Breakdown Voltage
(I
C
= -10
mAdc,
I
E
= 0)
Emitter-Base Breakdown Voltage
(I
E
= -10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= -30 Vdc, V
EB(off)
= -0.5 Vdc)
Collector Cutoff Current
(V
CB
= -50 Vdc, I
E
= 0)
(V
CB
= -50 Vdc, I
E
= 0, T
A
= 150°C)
Base Current
(V
CE
= -30 Vdc, V
EB(off)
= -0.5 Vdc)
ON CHARACTERISTICS
DC Current Gain
(I
C
= -0.1 mAdc, V
CE
= -10 Vdc)
(I
C
= -1.0 mAdc, V
CE
= -10 Vdc)
(I
C
= -10 mAdc, V
CE
= -10 Vdc)
(I
C
= -150 mAdc, V
CE
= -10 Vdc) (Note 1)
(I
C
= -500 mAdc, V
CE
= -10 Vdc) (Note 1)
Collector-Emitter Saturation Voltage (Note 1)
(I
C
= -150 mAdc, I
B
= -15 mAdc)
(I
C
= -500 mAdc, I
B
= -50 mAdc)
Base-Emitter Saturation Voltage (Note 1)
(I
C
= -150 mAdc, I
B
= -15 mAdc)
(I
C
= -500 mAdc, I
B
= -50 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product (Notes 1 and 2),
(I
C
= -50 mAdc, V
CE
= -20 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= -10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= -2.0 Vdc, I
C
= 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Of f Time
Storage Time
Fall Time
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
(V
CC
= -6.0 Vdc, I
C
= -150 mAdc,
I
B1
= I
B2
= 15 mAdc) (Figure 2)
(V
CC
= -30 Vdc, I
C
= -150 mAdc,
I
B1
= -15 mAdc) (Figures 1 and 5)
t
on
t
d
t
r
t
off
t
s
t
f
-
-
-
-
-
-
45
10
40
100
80
30
ns
ns
ns
ns
ns
ns
f
T
C
obo
C
ibo
200
-
-
-
8.0
30
MHz
pF
pF
h
FE
75
100
100
100
50
V
CE(sat)
-
-
V
BE(sat)
-
-
-1.3
-2.6
-0.4
-1.6
Vdc
-
-
-
300
-
Vdc
-
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
-
-
I
B
-
-0.01
-10
-50
nAdc
-60
-60
-5.0
-
-
-
-
-50
Vdc
Vdc
Vdc
nAdc
mAdc
Symbol
Min
Max
Unit
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2
PN2907A
ORDERING INFORMATION
Device
PN2907AG
PN2907ARLRAG
Package
TO-92
(Pb-Free)
TO-92
(Pb-Free)
Shipping
†
5000 Units / Bulk
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
INPUT
Z
o
= 50
W
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
0
-16 V
200 ns
50
1.0 k
-30 V
200
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
Figure 1. Delay and Rise Time Test Circuit
INPUT
Z
o
= 50
W
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
0
-30 V
200 ns
+15 V
-6.0 V
37
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
1.0 k
1.0 k
50
1N916
Figure 2. Storage and Fall Time Test Circuit
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3
PN2907A
TYPICAL CHARACTERISTICS
3.0
hFE , NORMALIZED CURRENT GAIN
2.0
V
CE
= -1.0 V
V
CE
= -10 V
T
J
= 125°C
25°C
1.0
0.7
0.5
0.3
0.2
-0.1
-55
°C
-0.2
-0.3
-0.5 -0.7
-1.0
-2.0
-3.0
-5.0 -7.0
-10
-20
-30
-50 -70
-100
-200
-300
-500
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0
-0.8
I
C
= -1.0 mA
-0.6
-10 mA
-100 mA
-500 mA
-0.4
-0.2
0
-0.005
-0.01
-0.02 -0.03
-0.05 -0.07 -0.1
-0.2 -0.3
-0.5 -0.7 -1.0
I
B
, BASE CURRENT (mA)
-2.0
-3.0
-5.0 -7.0
-10
-20
-30
-50
Figure 4. Collector Saturation Region
300
200
100
70
50
30
20
t
d
@ V
BE(off)
= 0 V
10
7.0
5.0
3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
I
C
, COLLECTOR CURRENT
t
r
500
V
CC
= -30 V
I
C
/I
B
= 10
T
J
= 25°C
t, TIME (ns)
300
200
t
f
100
70
50
30
20
2.0 V
-200 -300
-500
10
7.0
5.0
-5.0 -7.0 -10
t′
s
= t
s
- 1/8 t
f
V
CC
= -30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
-20 -30
-50 -70 -100
-200 -300 -500
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn-On Time
Figure 6. Turn-Off Time
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4
PN2907A
TYPICAL SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25°C
10
10
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
I
C
= -1.0 mA, R
s
= 430
W
-500
mA,
R
s
= 560
W
-50
mA,
R
s
= 2.7 kW
-100
mA,
R
s
= 1.6 kW
R
s
= OPTIMUM SOURCE RESISTANCE
NF, NOISE FIGURE (dB)
8.0
6.0
6.0
4.0
4.0
I
C
= -50
mA
-100
mA
-500
mA
-1.0 mA
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
100
0
50
100
200
500 1.0 k
2.0 k
5.0 k 10 k
20 k
50 k
f, FREQUENCY (kHz)
R
s
, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 8. Source Resistance Effects
30
20
C, CAPACITANCE (pF)
C
eb
400
300
200
10
7.0
5.0
3.0
2.0
-0.1
C
cb
100
80
60
40
30
20
-1.0
-2.0
V
CE
= -20 V
T
J
= 25°C
-0.2 -0.3 -0.5
-1.0
-2.0 -3.0 -5.0
-10
-20 -30
-5.0
-10
-20
-50
-100 -200
-500 -1000
REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
Figure 10. Current-Gain — Bandwidth Product
-1.0
T
J
= 25°C
-0.8
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 10
COEFFICIENT (mV/
°
C)
V
BE(on)
@ V
CE
= -10 V
+0.5
0
R
qVC
for V
CE(sat)
-0.5
-1.0
-1.5
-2.0
V
CE(sat)
@ I
C
/I
B
= 10
-2.5
-0.1 -0.2
R
qVB
for V
BE
-0.6
-0.4
-0.2
0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
I
C
, COLLECTOR CURRENT (mA)
-500
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
I
C
, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
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