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CY7C1525KV18-250BZCT

产品描述SRAM Sync SRAMs
产品类别存储   
文件大小624KB,共35页
制造商Cypress(赛普拉斯)
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CY7C1525KV18-250BZCT概述

SRAM Sync SRAMs

CY7C1525KV18-250BZCT规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Cypress(赛普拉斯)
产品种类
Product Category
SRAM
Memory Size72 Mbit
Organization8 M x 9
Access Time0.45 ns
Maximum Clock Frequency250 MHz
接口类型
Interface Type
Parallel
电源电压-最大
Supply Voltage - Max
1.9 V
电源电压-最小
Supply Voltage - Min
1.7 V
Supply Current - Max640 mA
最小工作温度
Minimum Operating Temperature
0 C
最大工作温度
Maximum Operating Temperature
+ 70 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
FBGA-165
系列
Packaging
Reel
Memory TypeQDR
类型
Type
Synchronous
NumOfPackaging1
工厂包装数量
Factory Pack Quantity
1000

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CY7C1525KV18
CY7C1512KV18
CY7C1514KV18
72-Mbit QDR
®
II SRAM Two-Word
Burst Architecture
72-Mbit QDR
®
II SRAM Two-Word Burst Architecture
Features
Configurations
CY7C1525KV18 – 8M × 9
CY7C1512KV18 – 4M × 18
CY7C1514KV18 – 2M × 36
Separate independent read and write data ports
Supports concurrent transactions
350 MHz clock for high bandwidth
Two-word burst on all accesses
Double data rate (DDR) interfaces on both read and write ports
(data transferred at 700 MHz) at 350 MHz
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
Echo clocks (CQ and CQ) simplify data capture in high speed
systems
Single multiplexed address input bus latches address inputs
for both read and write ports
Separate port selects for depth expansion
Synchronous internally self-timed writes
QDR
®
II operates with 1.5 cycle read latency when DOFF is
asserted HIGH
Operates similar to QDR I device with 1 cycle read latency when
DOFF is asserted LOW
Available in × 9, × 18, and × 36 configurations
Full data coherency, providing most current data
Core V
DD
= 1.8 V (±0.1 V); I/O V
DDQ
= 1.4 V to V
DD
Supports both 1.5 V and 1.8 V I/O supply
Available in 165-ball fine pitch ball grid array (FBGA) package
(13 × 15 × 1.4 mm)
Offered in both Pb-free and non Pb-free packages
Variable drive HSTL output buffers
JTAG 1149.1 compatible test access port
Phase Locked Loop (PLL) for Accurate Data Placement
Functional Description
The CY7C1525KV18, CY7C1512KV18, and CY7C1514KV18
are 1.8 V synchronous pipelined SRAMs, equipped with QDR II
architecture. QDR II architecture consists of two separate ports:
the read port and the write port to access the memory array. The
read port has dedicated data outputs to support read operations
and the write port has dedicated data inputs to support write
operations. QDR II architecture has separate data inputs and
data outputs to completely eliminate the need to “turnaround” the
data bus that exists with common I/O devices. Access to each
port is through a common address bus. Addresses for read and
write addresses are latched on alternate rising edges of the input
(K) clock. Accesses to the QDR II read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are equipped with DDR
interfaces. Each address location is associated with 9-bit words
(CY7C1525KV18), 18-bit words (CY7C1512KV18), or 36-bit
words (CY7C1514KV18) that burst sequentially into or out of the
device. Because data can be transferred into and out of the
device on every rising edge of both input clocks (K and K and C
and C), memory bandwidth is maximized while simplifying
system design by eliminating bus turnarounds.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
For a complete list of related documentation, click
here.
Selection Guide
Description
Maximum operating frequency
Maximum operating current
×9
× 18
350 MHz
350
Not Offered
840
333 MHz
333
790
810
990
300 MHz
300
730
750
910
250 MHz
250
640
650
790
Unit
MHz
mA
× 36 Not Offered
Cypress Semiconductor Corporation
Document Number: 001-00436 Rev. *V
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised January 19, 2018

 
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