d. Maximum under steady state conditions is 90 °C/W.
Document Number: 73458
S11-0209-Rev. C, 14-Feb-11
www.vishay.com
1
Si4392ADY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Symbol
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= 1 mA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
½10
V, I
D
= 12.5 A
V
GS
½4.5
V, I
D
= 10 A
V
DS
= 15 V, I
D
= 12.5 A
Min.
30
Typ.
Max.
Unit
V
30
-6
1.0
2.5
± 100
1
10
30
0.006
0.009
46
1465
0.0075
0.0115
mV/°C
V
nA
µA
A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 12.5 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 12.5 A
f = 1 MHz
V
DD
= 15 V, R
L
= 3
I
D
5 A, V
GEN
= 4.5 V, R
g
= 1
360
150
25
12
3.7
3.1
1.9
16
50
21
8
8
2.9
25
75
32
15
15
55
35
15
5.6
50
0.73
26
19
13
13
1.1
40
30
38
18
pF
nC
ns
V
DD
= 15 V, R
L
= 3
I
D
5 A, V
GEN
= 10 V, R
g
= 1
35
23
8
T
C
= 25 °C
I
S
= 2.7 A
A
V
ns
nC
ns
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73458
S11-0209-Rev. C, 14-Feb-11
Si4392ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
V
GS
= 10
V
thru 4
V
40
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
1.0
25 °C
0.8
1.2
30
0.6
T
C
= 125 °C
0.4
20
3
V
10
0.2
- 55 °C
0
0.0
0.3
0.6
0.9
1.2
1.5
0.0
0.0
1.0
2.0
3.0
4.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.011
1800
Transfer Characteristics
0.010
R
DS(on)
- On-Resistance (mΩ)
C - Capacitance (pF)
1500
C
iss
0.009
V
GS
= 4.5
V
1200
0.008
900
0.007
V
GS
= 10
V
600
C
oss
300
C
rss
0.006
0.005
0
10
20
30
40
50
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
V
G S
- Gate-to-So
u
rce
V
oltage (
V
)
I
D
= 12.5 A
8
R
DS(on)
- On-Resistance
V
DS
= 10
V
6
V
DS
= 15
V
V
DS
= 20
V
1.8
I
D
= 12.5 A
1.6
Capacitance
1.4
(
N
ormalized)
V
GS
= 10
V
1.2
V
GS
= 4.5
V
4
1.0
2
0.8
0
0.0
5.2
10.4
15.6
20.8
26.0
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73458
S11-0209-Rev. C, 14-Feb-11
www.vishay.com
3
Si4392ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
R
DS(on)
- Drain-to-So
u
rce On-Resistance (Ω)
0.05
10
I
S
- So
u
rce C
u
rrent (A)
T
J
= 150 °C
0.04
1
0.03
0.1
T
J
= 25 °C
0.02
T
J
= 125 °C
0.01
0.01
T
J
= 25 °C
0.00
0
1
2
3
4
5
6
7
8
9
10
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.4
I
D
= 250
µA
0.2
24
V
GS(th)
Variance
(V)
0.0
I
D
= 5 mA
- 0.2
- 0.4
- 0.6
6
- 0.8
- 1.0
- 50
0
- 25
0
25
50
75
100
125
150
10
-2
Po
w
er (W)
18
30
On-Resistance vs. Gate-to-Source Voltage
12
10
-1
1
Time (s)
10
100
600
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain C
u
rrent (A)
1 ms
1
10 ms
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
*
V
GS
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
10 s
DC
Single Pulse Power
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73458
S11-0209-Rev. C, 14-Feb-11
Si4392ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
25
7.5
20
I
D
- Drain C
u
rrent (A)
6.0
10
Po
w
er (W)
0
25
50
75
100
125
15
15
4.5
3.0
5
1.5
0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
1.70
Power Derating, Junction-to-Foot
1.36
Po
w
er (W)
1.02
0.68
0.34
0.00
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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