MGA-31389
0.1W High Gain Driver Amplifier
50MHz ~ 2GHz
Data Sheet
Description
Avago Technologies MGA-31389 is a high performance
Driver Amplifier MMIC, housed in a standard SOT-89 plastic
package. The device features flat high gain with excellent
input and output return loss, as well as superior linearity
performance. The device can be easily matched to obtain
desired performance.
MGA-31389 is especially ideal for 50
Ω
wireless infrastruc-
ture application within the 50 MHz to 2GHz frequency
range applications. With high IP3 and low noise figure and
wideband operation, the MGA-31389 may be utilized as
a driver amplifier in the transmit chain and as a second
stage LNA in the receiver chain.
This device uses Avago Technologies proprietary 0.25
mm
GaAs Enhancement mode PHEMT process.
Features
•
ROHS compliant
•
Halogen free
•
High IP3 at low DC bias power
(1)
•
High gain, with good gain flatness
•
Low noise figure
•
Advanced enhancement mode PHEMT Technology
•
Excellent uniformity in product specification
•
SOT-89 standard package
Specifications
At 0.9 GHz, Vd = 5 V, Id = 73 mA (typ) @ 25° C
•
OIP3 = 38.6 dBm
•
Noise Figure = 2.0 dB
•
Gain = 21.3 dB, Gain flatness (± 50 MHz) = 0.14 dB
•
P1dB = 22.2 dBm
•
IRL = 30.5 dB, ORL = 14.7 dB
Note:
1. The MGA-31389 has a superior LFOM of 13.3 dB. Linearity Figure of
Merit (LFOM) is essentially OIP3 divided by DC bias power.
Pin connections and Package Marking
13X
#1
#2
RFin
GND
Top View
#3
RFout
#3
#2
RFout
GND
#1
RFin
Simplified Schematic
Vdd
C
C
Bottom View
Note:
Package marking provides orientation and identification
“13” = Device Code
“X” = Date Code character indentifies month of manufacturing
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 75 V
ESD Human Body Model = 1000 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
C
L
RFin
RFout
C
C
Figure 1. Simplified Schematic diagram
MGA-31389 Absolute Maximum Rating
(1)
T
A
=25° C
Symbol
V
d, max
P
d
P
in
T
j
T
STG
Thermal Resistance
Units
V
mW
dBm
°C
°C
Parameter
Drain Voltage, RF output to ground
Power Dissipation
(2)
CW RF Input Power
Junction Temperature
Storage Temperature
Absolute Max.
5.5
605
20
150
-65 to 150
Thermal Resistance
(3)
(V
d
= 5.0 V, T
c
= 85° C),
θ
jc
= 60.0° C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Source lead temperature is 25° C. Derate 16.7
mW/° C for T
L
>128.0° C.
3. Thermal resistance measured using 150° C
Infra-Red Microscopy Technique.
MGA-31389 Electrical Specification
(1)
T
C
= 25° C, V
d
= 5 V, unless noted
Symbol
I
ds
NF
Parameter and Test Condition
Quiescent Current
Noise Figure
Frequency
N/A
0.45 GHz
0.9 GHz
1.5 GHz
0.45 GHz
0.9 GHz
1.5 GHz
0.45 GHz
(2)
0.9 GHz
(2)
1.5 GHz
(2)
0.45 GHz
0.9 GHz
1.5 GHz
0.45 GHz
0.9 GHz
1.5 GHz
0.45 GHz
0.9 GHz
1.5 GHz
0.45 GHz
0.9 GHz
1.5 GHz
0.45 GHz
0.9 GHz
1.5 GHz
Units
mA
dB
Min.
62
–
Typ.
73
2.3
2.0
2.0
21.5
21.3
20.6
38.6
38.6
41.3
22.0
22.2
21.7
41.0
41.2
38.4
24.3
30.5
15.3
11.4
14.7
12.1
27.2
27.6
28.6
Max.
90
2.5
Gain
Gain
dB
20
23
OIP3
(2)
Output Third Order Intercept Point
dBm
36.3
–
P1dB
Output Power at 1 dB Gain Compression
dBm
20.6
–
PAE
Power Added Efficiency at P1dB
%
–
–
IRL
Input Return Loss
dB
–
–
ORL
Output Return Loss
dB
–
–
ISOL
Isolation
dB
–
–
Note :
1. Measurements obtained from a test circuit described in Figure 34
2. OIP3 test condition: F1 - F2 = 10 MHz, with input power of -14 dBm per tone measured at worst case side band.
2
MGA-31389 Consistency Distribution Chart
(1,2)
70
80
1.7
1.8
1.8
2
2.1
2.2
2.3
Figure 2. Id @ 900MHz, Vd=5V, LSL=62mA, Nominal=76mA, USL=90mA
Figure 3. NF @ 900MHz, Vd=5V, Nominal=2.0dB, USL=2.5dB
20.8
21 21.1
21.3
21.5
21.7
21.9 22 22.1
38
39
40
41
Figure 4. Gain @ 900MHz, Vd=5V, LSL=20dB, Nominal=21.5dB, USL=23dB
Figure 5. OIP3 @ 900MHz, Vd=5V, LSL=36.3dBm, Nominal=39.3dBm
21
22
23
Figure 6. P1dB @ 900MHz, Vd=5V, LSL= 20.6dBm, Nominal=22.2dBm
Notes:
1. Data sample size is 3000 samples taken from 3 different wafers and 2 different lots. Future wafers allocated to this product may have nominal
values anywhere between the upper and lower limits.
2. Measurements are made on production test board which represents a trade-off between optimal Gain, NF, OIP3 and OP1dB. Circuit losses have
been de-embedded from actual measurements.
3
MGA-31389 Application Circuit Data for 450 MHz
T
c
= 25° C, V
d
= 5.0 V, I
d
= 73 mA
44
43
42
41
40
39
38
37
36
35
34
33
23
22
P1dB (dBm)
25° C
-40° C
85° C
150
250
350
450
550
Frequency (MHz)
650
750
21
20
19
18
17
150
250
350
450
550
Frequency (MHz)
650
25° C
-40° C
85° C
750
OIP3 (dBm)
Figure 7. OIP3 vs Frequency and Temperature
Figure 8. P1dB vs Frequency and Temperature
22
21
20
Gain (dB)
19
18
17
16
150
250
350
450
550
Frequency (MHz)
650
25° C
-40° C
85° C
750
IRL (dB)
-5
-10
-15
-20
-25
-30
-35
-40
150
250
350
450
550
Frequency (MHz)
650
750
25° C
-40° C
85° C
Figure 9. Gain vs Frequency and Temperature
Figure 10. IRL vs Frequency and Temperature
0
-5
ORL (dB)
-10
-15
-20
-25
150
25° C
-40° C
85° C
Isolation (dB)
-26
-27
-28
-29
-30
-31
150
25° C
-40° C
85° C
250
350
450
550
Frequency (MHz)
650
750
250
350
450
550
Frequency (MHz)
650
750
Figure 11. ORL vs Frequency and Temperature
Figure 12. Isolation vs Frequency and Temperature
4
MGA-31389 Application Circuit Data for 450 MHz
(cont'd)
T
c
= 25° C, V
d
= 5.0 V, I
d
= 73 mA
3.0
2.5
Noise Figure (dB)
OIP3 (dBm)
2.0
1.5
1.0
0.5
0.0
150
250
350
450
550
Frequency (MHz)
650
25° C
-40° C
85° C
750
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
25° C
-40° C
85° C
-20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5
Pin (dBm)
Figure 13. Noise Figure vs Frequency and Temperature
Figure 14. OIP3 vs Input Power and Temperature
110
100
90
80
70
60
50
40
30
20
10
0
Current (mA)
25° C
-40° C
85° C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Voltage (Volt)
Figure 15. Current vs Voltage and Temperature
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
