VS-CPV363M4UPbF
www.vishay.com
Vishay Semiconductors
IGBT SIP Module
(Ultrafast IGBT)
FEATURES
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
• HEXFRED
®
soft ultrafast diodes
• Optimized for medium speed, see fig. 1 for current vs.
frequency curve
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
IMS-2
PRIMARY CHARACTERISTICS
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
V
CES
I
RMS
per phase (2.1 kW total)
with T
C
= 90 °C
T
J
Supply voltage
Power factor
Modulation depth (see fig. 1)
V
CE(on)
(typical)
at I
C
= 6.8 A, 25 °C
Speed
Package
Circuit configuration
600 V
7.1 A
RMS
125 °C
360 V
DC
0.8
115 %
1.7 V
8 kHz to 30 kHz
SIP
Three phase inverter
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current, each IGBT
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
Isolation voltage
Maximum power dissipation, each IGBT
Operating junction and storage temperature range
Soldering temperature
Mounting torque
SYMBOL
V
CES
I
C
I
CM
I
F
I
FM
V
GE
V
ISOL
P
D
T
J
, T
Stg
For 10 s, (0.063" (1.6 mm) from case)
6-32 or M3 screw
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 100 °C
(1)
TEST CONDITIONS
T
C
= 25 °C
T
C
= 100 °C
MAX.
600
13
6.8
40
40
UNITS
V
I
LM (2)
T
C
= 100 °C
A
6.1
40
± 20
2500
36
14
-40 to +150
300
5 to 7
(0.55 to 0.8)
V
V
RMS
W
°C
lbf
in
(N
m)
Notes
(1)
Repetitive rating; V
GE
= 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2)
V
CC
= 80 % (V
CES
), V
GE
= 20 V, L = 10 μH, R
G
= 23
(see fig. 19)
Revision: 25-Oct-17
Document Number: 94486
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-CPV363M4UPbF
www.vishay.com
Vishay Semiconductors
SYMBOL
R
thJC
(IGBT)
R
thJC
(DIODE)
R
thCS
(MODULE)
TYP.
-
-
0.10
20
0.7
MAX.
3.5
5.5
-
-
-
g
oz.
°C/W
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction-to-case, each IGBT, one IGBT in conduction
Junction-to-case, each diode, one diode in conduction
Case to sink, flat, greased surface
Weight of module
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Temperature coeff. of breakdown
voltage
Collector to emitter saturation voltage
Gate threshold voltage
Temperature coeff. of threshold voltage
Forward transconductance
Zero gate voltage collector current
Diode forward voltage drop
Gate to emitter leakage current
Notes
(1)
Pulse width
80 μs, duty factor
0.1 %
(2)
Pulse width 5.0 μs; single shot
SYMBOL
V
(BR)CES
(1)
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 0 V, I
C
= 1.0 mA
I
C
= 6.8 A
I
C
= 13 A
I
C
= 6.8 A, T
J
= 150 °C
V
CE
= V
GE
, I
C
= 250 μA
V
CE
= 100 V, I
C
= 6.8 A
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C
I
C
= 12 A
See fig. 13
I
C
= 12 A, T
J
= 150 °C
V
GE
= ± 20 V
V
GE
= 15 V
See fig. 2, 5
MIN.
600
-
-
-
-
3.0
-
4.0
-
-
-
-
-
TYP.
-
0.63
1.70
2.00
1.70
-
- 11
6.0
-
-
1.4
1.3
-
MAX.
-
-
2.2
-
-
6.0
-
-
250
2500
1.7
1.6
± 100
UNITS
V
V/°C
V
(BR)CES
T
J
V
CE(on)
V
GE(th)
V
GE(th)
/T
J
g
fe (2)
I
CES
V
FM
I
GES
V
mV/°C
S
μA
V
nA
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse recovery charge
Diode reverse recovery charge
Diode peak rate of fall of recovery
during t
b
SYMBOL
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
dI
(rec)M
/dt
TEST CONDITIONS
I
C
= 6.8 A
V
CC
= 400 V
See fig. 8
T
J
= 25 °C
I
C
= 6.8 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 23
Energy losses include “tail” and diode
reverse recovery.
See fig. 9, 10, 11, 18
T
J
= 150 °C
I
C
= 6.8 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 23
Energy losses include “tail” and
diode reverse recovery
See fig. 9, 10, 11, 18
V
GE
= 0 V
V
CC
= 30 V
ƒ = 1.0 MHz
See fig. 7
T
J
= 25 °C
See fig. 14
T
J
= 125 °C
T
J
= 25 °C
See fig. 15
I
F
= 12 A
T
J
= 125 °C
V
R
= 200 V
T
J
= 25 °C
See fig. 16 dI/dt = 200 A/μs
T
J
= 125 °C
T
J
= 25 °C
See fig. 17
T
J
= 125 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
53
7.7
21
43
14
95
83
0.17
0.15
0.32
41
16
110
230
0.52
1100
73
14
42
83
3.5
5.6
80
220
180
116
MAX.
79
12
31
-
-
140
190
-
-
0.45
-
-
-
-
-
-
-
-
60
120
6.0
10
180
600
-
-
ns
A
nC
A/μs
UNITS
nC
ns
mJ
ns
mJ
pF
Revision: 25-Oct-17
Document Number: 94486
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-CPV363M4UPbF
www.vishay.com
Vishay Semiconductors
3.50
12
8
2.33
6
1.75
4
1.17
2
0.58
0
0.1
0.00
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of Fundamental)
100
14
V
GE
= 15V
I
C
, Collector-to-Emitter Current (A)
Maximum DC Collector Current (A)
12
10
10
8
T
J
= 150°C
T
J
= 25°C
1
6
4
2
0.1
0.1
1
V
GE
= 15V
20µs PULSE WIDTH
10
0
25
50
75
100
125
150
V
CE
, Collector-to-Emitter Voltage (V)
T
C
, Case Temperature (°C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Maximum Collector Current vs. Case Temperature
100
3.0
I
C
, Collector-to-Emitter Current (A)
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
I
C
=13.6A
T
J
= 150°C
10
T
J
= 25°C
2.0
I
C
= 6.8A
1
I
C
= 3.4 A
0.1
5
6
7
V
CC
= 10V
5µs PULSE WIDTH
8
9
10
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
V
GE
, Gate-to-Emitter Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig. 3 - Typical Transfer Characteristics
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Revision: 25-Oct-17
Document Number: 94486
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Total Output Power (kW)
10
LOAD CURRENT (A)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
2.92
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www.vishay.com
Vishay Semiconductors
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
P
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/t
2
DM
t
1
t
2
0.01
0.00001
2. Peak T
J
= P
DM
x Z
thJC
+ T C
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
2000
C, Capacitance (pF)
1600
C
ies
1200
Total Switching Losses (mJ)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc
, C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
0.40
V
CC
V
GE
T
J
0.38
I
C
= 480V
= 15V
= 25
°
C
= 6.8A
0.36
800
C
oes
C
res
0.34
400
0.32
0
1
10
100
0.30
0
12
24
36
48
60
V
CE
, Collector-to-Emitter Voltage (V)
R
G
, Gate Resistance (
Ω
)
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
20
V
GE
, Gate-to-Emitter Voltage (V)
V
CC
= 400V
I
C
= 6.8A
10
R
G
= 23
Ω
V
GE
= 15V
V
CC
= 480V
12
Total Switching Losses (mJ)
16
1
I
C
=
13.6
A
I
C
=
6.8
A
I
C
=
3.4
A
8
4
0
0
10
20
30
40
50
60
0.1
-60 -40 -20
0
20 40
60
80 100 120 140 160
Q
G
, Total Gate Charge (nC)
T
J
, Junction Temperature (
°
C )
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 10 - Typical Switching Losses vs. Junction Temperature
Revision: 25-Oct-17
Document Number: 94486
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-CPV363M4UPbF
www.vishay.com
Vishay Semiconductors
100
1.2
0.8
I
C
, Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
R
G
T
J
V
CC
1.0
V
GE
= 23
Ω
= 150
°
C
= 480V
= 15V
V
GE
= 20V
o
T
J
= 125 C
10
0.6
0.4
1
0.2
0.0
0
2
4
6
8
10
12
14
16
SAFE OPERATING AREA
0.1
1
10
100
1000
I
C
, Collector-to-emitter Current (A)
V
CE
, Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
Fig. 12 - Turn-Off SOA
100
Instantaneous Forward Current - I
F
(A)
T
J
= 150°C
10
T
J
= 125°C
T
J
= 25°C
1
0.4
1.4
2.4
Forward Voltage Drop - V
FM
(V)
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Revision: 25-Oct-17
Document Number: 94486
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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