NXP Semiconductors
Technical Data
Document Number: MRFE8VP8600H
Rev. 1, 08/2017
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These high power transistors are designed for use in UHF TV broadcast
applications. The devices have an integrated input matching network for better
power distribution and are ideal for use in both analog and digital TV
transmitters.
DBV- Broadband Class AB Performance:
V
DD
= 50 Vdc, I
DQ
= 1400 mA,
-T
Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
P
out
(W)
140 Avg.
f
(MHz)
474
610
810
G
ps
(dB)
20.2
20.7
20.0
D
(%)
29.7
34.5
34.0
Output
PAR
(dB)
8.9
8.2
8.4
MRFE8VP8600H
MRFE8VP8600HS
470–860 MHz, 140 W AVG., 50 V
RF POWER LDMOS TRANSISTORS
Signal Type
DVB--T (8k OFDM)
Load Mismatch/Ruggedness
Frequency
(MHz)
860
Signal Type
DVB--T
(8k OFDM)
VSWR
20:1 at all
Phase Angles
P
out
(W)
125
(3 dB
Overdrive)
Test
Voltage
50
Result
No Device
Degradation
NI-
-1230H-
-4S
MRFE8VP8600H
Features
Excellent thermal characteristics
High gain for reduced PA size
High efficiency for Class AB and Doherty operations
Integrated input matching and unmatched output
Extended negative gate--source voltage range of –6 Vdc to +10 Vdc
NI-
-1230S-
-4S
MRFE8VP8600HS
Gate A
3
1 Drain A
Gate B
4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
2017 NXP B.V.
MRFE8VP8600H MRFE8VP8600HS
1
RF Device Data
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1)
Total Device Dissipation @ T
C
= 25C
Derate above 25C
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
D
Value
–0.5, +115
–6.0, +10
–65 to +150
–40 to +150
–40 to +225
1250
6.25
Unit
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 99C, 125 W DVB--T (8k OFDM), 50 Vdc, I
DQ
= 1400 mA, 860 MHz
Symbol
R
JC
Value
(2,3)
0.16
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2, passes 2500 V
B, passes 250 V
IV, passes 2000 V
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10
Adc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 115 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(4)
(V
DS
= 10 Vdc, I
D
= 925
Adc)
Gate Quiescent Voltage
(5)
(V
DD
= 50 Vdc, I
D
= 1400 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(4)
(V
GS
= 10 Vdc, I
D
= 2.8 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 17 Adc)
Dynamic Characteristics
(4)
Reverse Transfer Capacitance
(6)
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(6)
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(7)
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
1.
2.
3.
4.
5.
6.
7.
C
rss
C
oss
C
iss
—
—
—
1.62
71.2
452
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
1.3
1.8
0.1
—
2.1
2.4
0.3
19.4
2.3
2.8
0.5
—
Vdc
Vdc
Vdc
S
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
115
—
—
—
118
—
—
1
—
5
20
Adc
Vdc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at
http://www.nxp.com/RF/calculators.
Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
Each side of device measured separately.
Measurement made with device in push--pull configuration.
Part internally input matched.
Die capacitance value without internal matching.
(continued)
MRFE8VP8600H MRFE8VP8600HS
2
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In NXP Narrowband Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 1400 mA, P
out
= 125 W Avg., f = 860 MHz,
DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Signal Bandwidth @
4
MHz Offset with an Integration Bandwidth of 4 kHz.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
G
ps
D
ACPR
IRL
20.6
28.0
—
—
21.0
30.0
–61.0
–12
23.6
—
–59.4
–9
dB
%
dBc
dB
Typical DVB- (8k OFDM) Performance
(In NXP Narrowband Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 1400 mA, f = 860 MHz,
-T
DVB--T (8k OFDM) Single Channel.
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF,
P
out
= 125 W Avg.
Load Mismatch
VSWR 20:1 at all Phase Angles, 3 dB Overdrive from
Rated P
out
(125 W Avg.)
PAR
—
7.8
—
dB
No Degradation in Output Power
Table 5. Ordering Information
Device
MRFE8VP8600HR5
MRFE8VP8600HSR5
Tape and Reel Information
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
Package
NI--1230H--4S
NI--1230S--4S
1. Measurement made with device in push--pull configuration.
MRFE8VP8600H MRFE8VP8600HS
RF Device Data
NXP Semiconductors
3
C1 C2
R1
C17
C18
C16
COAX1
C13*
C15
COAX3
C24*
C3*
C4*
C5*
C6*
C7
L1
C10*
CUT OUT AREA
C9
C25*
C19* C21*
C20*
C23*
C8
C22*
C26*
C27*
C28*
COAX2
MRFE8VP8600H
Rev. 0
C11 C12
R2
C14*
C29
C30
COAX4
C31
D63637
C32
*C3, C4, C5, C6, C10, C13, C14, C19, C20, C21, C22, C23, C24, C25, C26, C27, and C28 are mounted vertically.
Figure 2. MRFE8VP8600H Test Circuit Component Layout — 860 MHz, DVB- (8k OFDM)
-T
Table 6. MRFE8VP8600H Test Circuit Component Designations and Values — 860 MHz, DVB- (8k OFDM)
-T
Part
C1, C11
C2, C12
C3, C4, C5, C6
C7, C8
C9
C10
C13, C14
C15, C29
C16, C25, C26, C28, C30
C17, C31
C18, C32
C19
C20
C21
C22
C23
C24, C27
Coax1, 2
Coax3, 4
L1
R1, R2
PCB
Description
10
F
Chip Capacitors
2.2
F
Chip Capacitors
30 pF Chip Capacitors
24 pF Chip Capacitors
0.8–8.0 pF Variable Capacitor
12 pF Chip Capacitor
8.2 pF Chip Capacitors
2.2
F
Chip Capacitors
100 pF Chip Capacitors
4.7
F
Chip Capacitors
470
F,
63 V Electrolytic Capacitors
7.5 pF Chip Capacitor
3.3 pF Chip Capacitor
3.0 pF Chip Capacitor
3.9 pF Chip Capacitor
5.1 pF Chip Capacitor
1000 pF Chip Capacitors
25
Semi Rigid Coax, 2.0 Shield Length
25
Semi Rigid Coax, 2.2 Shield Length
2.5 nH, 1 Turn Inductor
10
,
1/4 W Chip Resistors
Rogers RO4350B, 0.030,
r
= 3.66
Part Number
GRM32ER61H106KA12L
C3225X7R1H225K250AB
ATC100B300JT500XT
ATC100B240JT500XT
27291SL
ATC100B120JT500XT
ATC100B8R2CT500XT
C3225X7R2A225K230AB
ATC100B101JT500XT
C575X7R2A475K230KA
MCGPR63V477M13X26--RH
ATC100B7R5CT500XT
ATC100B3R3CT500XT
ATC100B3R0BT500XT
ATC100B3R9CT500XT
ATC100B5R1CT500XT
ATC100B102JT50XT
UT--141C--25
UT--141C--25
A01TKLC
CRCW120610R0JNEA
D63637
Manufacturer
Murata
TDK
ATC
ATC
Johanson Components
ATC
ATC
TDK
ATC
TDK
Multicomp
ATC
ATC
ATC
ATC
ATC
ATC
Micro--Coax
Micro--Coax
Coilcraft
Vishay
MTL
MRFE8VP8600H MRFE8VP8600HS
4
RF Device Data
NXP Semiconductors
COAX1
C1
C15
C13
C24
Z24
Z28
Z40
Z32
Z34
Z36 Z38
Z26
Z30
Z18
Z6
C7
L1
DUT
C19
C20
C21
C22
C23
Z41
Z23
Z25
Z29
Z33
Z35
Z47
C27
C29
V
BIAS
Z51
+
C11
C30
C12
C31
C32
R2
Z21
Z49
V
SUPPLY
COAX4
Z27
Z31
Z37 Z39
C26
Z42
C14
Z15
Z17
Z19
Z7
Z9
C8
Z11
Z13
C9
C10
Z8
Z10
Z12
Z14
Z16
C25
Z43
C28
Z22
Z46
C2
COAX3
V
BIAS
+
Z48
C16
C18
C17
R1
V
SUPPLY
Z20
Z50
RF Device Data
NXP Semiconductors
Figure 3. MRFE8VP8600H Test Circuit Schematic — 860 MHz DVB- (8k OFDM)
-T
Description
0.204
0.062 Microstrip
Z18, Z19
Z20*, Z21*
Z22, Z23
Z24, Z25
Z26, Z27
Z28, Z29
Z30, Z31
Z32, Z33
Z34, Z35
Z36, Z37
0.245
0.080 Microstrip
0.220
0.060 Microstrip
0.410
0.062 Microstrip
0.019
0.100 Microstrip
0.341
0.400 Microstrip
0.083
0.400 Microstrip
0.065
0.400 Microstrip
0.208
0.850 Microstrip
0.242
0.960 Microstrip
Microstrip
Description
0.115
0.080 Microstrip
1.026
0.080 Microstrip
0.164
0.520 Microstrip
0.186
0.520 Microstrip
0.015
0.420 Microstrip
0.072
0.420 Microstrip
0.072
0.420 Microstrip
0.275
0.420 Microstrip
0.072
0.420 Microstrip
0.074
0.420 Microstrip
Microstrip
Z38, Z39
Z40
Z41
Z42
Z43
Z44
Z45
Z46, Z47
Z48*, Z49*
Z50, Z51
Description
0.211
0.100 Microstrip
0.389
0.060 Microstrip
0.155
0.060 Microstrip
0.280
0.060 Microstrip
0.070
0.080 Microstrip
0.018
0.080 Microstrip
0.204
0.062 Microstrip
0.358
0.080 Microstrip
0.297
0.080 Microstrip
0.371
0.080 Microstrip
Z4
C3
Z3
RF
INPUT
Z1
Z2
C4
RF
OUTPUT
Z44 Z45
C5
Z5
C6
COAX2
Table 7. MRFE8VP8600H Test Circuit Schematic — 860 MHz DVB- (8k OFDM)
-T
Microstrip
Z1
Z2
Z3, Z4
Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
MRFE8VP8600H MRFE8VP8600HS
5
*Line length includes microstrip bends
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