VS-HFA280NJ60CPbF
www.vishay.com
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 280 A
FEATURES
• Very low Q
rr
and t
rr
Lug
terminal
anode 1
Lug
terminal
anode 2
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
BENEFITS
TO-244
Base common
cathode
• Reduced RFI and EMI
• Reduced snubbing
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
I
F(DC)
at T
C
Package
Circuit configuration
280 A
600 V
149 A at 100 °C
TO-244
Two diodes common cathode
HEXFRED
®
diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI
F
/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Non-repetitive avalanche energy
Maximum power dissipation
Operating junction and storage
temperature range
SYMBOL
V
R
I
F
I
FSM
E
AS
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
Limited by junction temperature
L = 100 μH, duty cycle limited by maximum T
J
T
C
= 25 °C
T
C
= 100 °C
TEST CONDITIONS
MAX.
600
292
149
600
2.2
657
263
-55 to +150
mJ
W
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
Maximum forward voltage
Maximum reverse
leakage current
Junction capacitance
Series inductance
SYMBOL
V
BR
I
R
= 100 μA
I
F
= 105 A
V
FM
I
F
= 210 A
I
F
= 105 A, T
J
= 125 °C
I
RM
C
T
L
S
T
J
= 125 °C, V
R
= 600 V
V
R
= 200 V
See fig. 2
See fig. 3
See fig. 1
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
1.33
1.53
1.22
2.4
280
5.0
MAX.
-
1.8
2.1
1.64
8
400
-
mA
pF
nH
V
UNITS
From top of terminal hole to mounting plane
Revision: 11-Jan-18
Document Number: 94067
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA280NJ60CPbF
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
t
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 105 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
39
92
180
9.3
16
490
1400
290
200
MAX.
-
140
270
17
30
1200
4000
-
-
A
nC
A/μs
ns
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of recovery current
See fig. 8
SYMBOL
I
RRM
Q
rr
dI
(rec)M
/dt
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Thermal resistance, junction to case
Typical thermal resistance, case to heatsink
Weight
Mounting torque (1)
Terminal torque
Vertical pull
2" lever pull
per leg
per module
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
MIN.
-55
-
-
-
-
-
30 (3.4)
center hole
12 (1.4)
30 (3.4)
-
-
TYP.
-
-
-
0.10
68
2.4
-
-
-
-
-
MAX.
150
0.19
0.095
-
-
-
40 (4.6)
18 (2.1)
40 (4.6)
80
35
lbf
in
g
oz.
lbf
in
(N
m)
°C/W
K/W
UNITS
°C
Note
(1)
Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface.
Gradually tighten each mounting bolt in 5 to 10 lbf
in
steps until desired or maximum torque limits are reached.
I
F
- Instantaneous Forward Current (A)
1000
10 000
T
J
= 150 °C
I
R
- Reverse Current (µA)
1000
T
J
= 125 °C
100
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
10
T
J
= 25 °C
1
0.2
0.7
1.2
1.7
2.2
2.7
3.2
1
100
200
300
400
500
600
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
(Per Leg)
Revision: 11-Jan-18
Document Number: 94067
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA280NJ60CPbF
www.vishay.com
Vishay Semiconductors
70
60
50
T
J
= 125 °C
T
J
= 25 °C
10 000
C
T
- Junction Capacitance (pF)
I
RRM
(A)
40
30
20
10
1000
T
J
= 25 °C
I
F
= 200 A
I
F
= 140 A
I
F
= 50 A
100
1
10
100
1000
0
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
dI
F
/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt (Per Leg)
160
140
5000
T
J
= 125 °C
T
J
= 25 °C
4000
I
F
= 200 A
I
F
= 140 A
I
F
= 50 A
Maximum Allowable
Case Temperature (°C)
120
DC
80
60
40
D = 0.50
Q
rr
(nC)
100
3000
2000
1000
20
0
0
50
100
150
200
250
300
350
0
100
1000
I
F(AV)
- DC Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward
Current (Per Leg)
300
250
200
T
J
= 125 °C
T
J
= 25 °C
dI
F
/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt (Per Leg)
10 000
dI
(rec)M
/dt (A/µs)
I
F
= 200 A
I
F
= 140 A
I
F
= 50 A
200 A
140 A
50 A
t
rr
(ns)
150
100
50
0
100
1000
T
J
= 125 °C
T
J
= 25 °C
1000
100
100
1000
dI
F
/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt (Per Leg)
dI
F
/dt (A/µs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt (Per Leg)
Revision: 11-Jan-18
Document Number: 94067
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA280NJ60CPbF
www.vishay.com
Vishay Semiconductors
1
Z
thJC
- Thermal Response
0.1
0.01
Single pulse
(thermal response)
0.001
0.00001
0.0001
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 9 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 11-Jan-18
Document Number: 94067
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA280NJ60CPbF
www.vishay.com
Vishay Semiconductors
I
L(PK)
High-speed
switch
L = 100 µH
D.U.T.
R
g
= 25
Ω
Current
monitor
Freewheel
diode
+
V
d
= 50 V
V
(AVAL)
V
R(RATED)
Decay
time
Fig. 12 - Avalanche Test Circuit and Waveforms
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
HFA
2
-
-
-
-
-
-
-
280
3
NJ
4
60
5
C
6
PbF
7
Vishay Semiconductors product
HEXFRED
®
family, electron irradiated
Average current rating
NJ = TO-224
Voltage rating (600 V)
C = two diodes common cathode
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95021
Revision: 11-Jan-18
Document Number: 94067
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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