AUTOMOTIVE GRADE
AUIRF8736M2TR
Automotive DirectFET
®
Power MOSFET
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
V
(BR)DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
Q
g
40V
1.3m
1.9m
137A
136nC
Applicable DirectFET
®
Outline and Substrate Outline
SB
Description
SC
M2
M4
M4
DirectFET
®
ISOMETRIC
L4
L6
L8
The AUIRF8736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile.
The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF8736M2 to offer substantial system level savings and performance improvement
specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing
techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
automotive applications.
Base Part Number
AUIRF8736M2
Package Type
DirectFET2 M-CAN
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
AUIRF8736M2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
A
= 25°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
E
AS
E
AS
(Tested)
I
AR
E
AR
T
P
T
J
T
STG
*
Qualification
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
40
±20
137
97
27
565
63
2.5
82
254
See Fig. 14, 15, 22a, 22b
270
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C
standards can be found at
http://www.irf.com/
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AUIRF8736M2TR
Thermal Resistance
Symbol
R
JA
R
JA
R
JA
R
J-Can
R
J-PCB
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
Typ.
–––
12.5
20
–––
1.0
0.42
Max.
60
–––
–––
2.4
–––
Units
°C/W
W/°C
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
V
(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
––– 0.03 –––
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
–––
1.3
1.9
Static Drain-to-Source On-Resistance
R
DS(on)
V
GS(th)
Gate Threshold Voltage
2.2
–––
3.9
Gate Threshold Voltage Coefficient
––– -9.3
–––
V
GS(th)
/T
J
gfs
Forward Transconductance
150
–––
–––
R
G
Internal Gate Resistance
––– 0.73 –––
–––
–––
1.0
Drain-to-Source Leakage Current
I
DSS
–––
–––
150
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
––– -100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Q
g
Total Gate Charge
–––
136
204
Q
gs1
Gate-to-Source Charge
–––
28
–––
Q
gs2
Gate-to-Source Charge
–––
10
–––
Q
gd
Gate-to-Drain ("Miller") Charge
–––
45
–––
Q
godr
Gate Charge Overdrive
–––
53
–––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
–––
55
–––
Q
oss
Output Charge
–––
41
–––
t
d(on)
Turn-On Delay Time
–––
36
–––
t
r
Rise Time
–––
119
–––
t
d(off)
Turn-Off Delay Time
–––
82
–––
t
f
Fall Time
–––
83
–––
C
iss
Input Capacitance
––– 6867 –––
C
oss
Output Capacitance
––– 1045 –––
C
rss
Reverse Transfer Capacitance
–––
682
–––
C
oss
eff.
Effective Output Capacitance
––– 1362 –––
Units
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1.0mA
m V
GS
= 10V, I
D
= 85A
V V
DS
= V
GS
, I
D
= 150µA
mV/°C
S V
DS
= 10V, I
D
= 85A
µA
nA
Units
nC
nC
V
DS
= 32V, V
GS
= 0V
V
DD
= 40V, V
GS
= 10V
I
D
= 85A
R
G
= 6.8
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
DS
= 20V
V
GS
= 10V
I
D
= 85A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Conditions
ns
pF
2
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AUIRF8736M2TR
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
46
59
Diode Characteristics
Symbol
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
Diode Forward Voltage
V
SD
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Max. Units
Conditions
137
MOSFET symbol
A
showing the
integral reverse
565
A
p-n junction diode.
1.3
V T
J
= 25°C, I
S
= 85A, V
GS
= 0V
–––
ns I
F
= 85A, V
DD
= 25V
–––
nC dv/dt = 100A/µs
Surface mounted on 1 in.
square Cu board (still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
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1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
AUIRF8736M2TR
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
4.5V
1
4.5V
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
60µs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
ID = 85A
4.0
Fig. 2
Typical Output Characteristics
RDS(on), Drain-to -Source On Resistance (
m
)
RDS(on), Drain-to -Source On Resistance (m
)
5.0
2.0
1.8
T J = 125°C
3.0
T J = 125°C
2.0
1.6
1.4
T J = 25°C
1.0
T J = 25°C
1.2
0.0
4
6
8
10
12
14
16
18
20
1.0
0
20
40
60
80
100
120
140
VGS, Gate -to -Source Voltage (V)
ID, Drain Current (A)
Fig. 3
Typical On-Resistance vs. Gate Voltage
1000
Fig. 4
Typical On-Resistance vs. Drain Current
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1.6
1.4
1.2
1.0
0.8
0.6
ID = 85A
VGS = 10V
100
T J = -40°C
T J = 25°C
10
T J = 175°C
VDS = 10V
60µs
PULSE WIDTH
1.0
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Transfer Characteristics
4
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Fig 6.
Normalized On-Resistance vs. Temperature
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4.5
VGS(th) , Gate threshold Voltage (V)
1000
AUIRF8736M2TR
ISD, Reverse Drain Current (A)
4.0
3.5
3.0
2.5
2.0
1.5
-75 -50 -25
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
100
T J = 175°C
ID
ID
ID
ID
= 150µA
= 250µA
= 1.0mA
= 1.0A
10
T J = 25°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
Fig. 7
Typical Threshold Voltage vs.
Junction Temperature
300
GFS , Forward Transconductance (S)
Fig 8.
Typical Source-Drain Diode Forward Voltage
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
250
200
150
TJ = 25°C
C, Capacitance (pF)
10000
Ciss
Coss
Crss
TJ = 175°C
100
50
0
0
20
40
60
80 100 120 140 160 180
1000
VDS = 10V
20µs PULSE WIDTH
100
1
10
VDS, Drain-to-Source Voltage (V)
100
ID, Drain-to-Source Current (A)
Fig 9.
Typical Forward Transconductance vs. Drain Current
14.0
ID= 85A
VGS, Gate-to-Source Voltage (V)
Fig 10.
Typical Capacitance vs. Drain-to-Source Voltage
140
120
ID, Drain Current (A)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
20
40
VDS= 32V
VDS= 20V
VDS= 8.0V
100
80
60
40
20
0
60
80 100 120 140 160 180
25
50
75
100
125
150
175
QG, Total Gate Charge (nC)
T C , Case Temperature (°C)
Fig 11.
Typical Gate Charge vs.
Gate-to-Source Voltage
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Fig 12.
Maximum Drain Current vs. Case Temperature
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January 14, 2014
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