IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BTA204W-600D
3Q Hi-Com Triac
15 August 2014
Product data sheet
1. General description
Planar passivated guaranteed commutation triac in a SOT223 surface mountable plastic
package for use in motor control circuits or with other highly inductive loads. This triac
balances the requirements of commutation performance and gate sensitivity and is
intended for interfacing with low power drivers, including micro controllers.
2. Features and benefits
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct triggering from low power drivers and logic ICs
High commutation capability with sensitive gate
High immunity to false turn-on by dV/dt with sensitive gate
Planar passivated for voltage ruggedness and reliability
Sensitive gate for easy logic level triggering
Surface mountable package
3. Applications
•
•
•
General purpose motor controls
Small loads in washing machines
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
sp
≤ 108 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
Typ
-
-
-
Max
600
10
1
Unit
V
A
A
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SO
T2
23
NXP Semiconductors
BTA204W-600D
3Q Hi-Com Triac
Symbol
I
GT
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 9
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 9
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 9
Min
-
-
-
Typ
-
-
-
Max
5
5
5
Unit
mA
mA
mA
Static characteristics
5. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
T1
T2
G
mb
main terminal 1
main terminal 2
gate
mounting base; connected to
T2
1
2
3
Simplified outline
4
Graphic symbol
T2
sym051
T1
G
SC-73 (SOT223)
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA204W-600D
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
Type number
BTA204W-600D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
15 August 2014
2 / 15
NXP Semiconductors
BTA204W-600D
3Q Hi-Com Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
sp
≤ 108 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
16.7 ms
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
6
I
T(RMS )
(A)
5
4
2
Conditions
Min
-
-
-
-
-
-
-
-
Max
600
1
11
10
0.5
100
1
5
0.5
150
125
003aak841
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; SIN
I
T
= 1.5 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
°C
over any 20ms period
-
-40
-
003a a k837
1.25
I
T(RMS)
(A)
1.00
108 °C
0.75
3
0.50
2
1
0
10
-2
0.25
10
-1
1
10
s urge duration (s)
0
-50
0
50
100
T
sp
(°C)
150
f = 50 Hz; T
sp
= 108 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
Fig. 2.
RMS on-state current as a function of solder
point temperature; maximum values
BTA204W-600D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
15 August 2014
3 / 15
NXP Semiconductors
BTA204W-600D
3Q Hi-Com Triac
1.6
P
tot
(W)
1.2
003aak839
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
101
T
sp(max)
(°C)
107
0.8
113
0.4
119
0
0
0.25
0.5
0.75
1.0
I
T(RMS)
(A)
125
1.25
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
10
3
I
T
I
TSM
(A)
003aak840
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
Fig. 4.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA204W-600D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
15 August 2014
4 / 15
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