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BD682G

产品描述Darlington Transistors 4A 100V 40W PNP
产品类别分立半导体    晶体管   
文件大小73KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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BD682G概述

Darlington Transistors 4A 100V 40W PNP

BD682G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
零件包装代码TO-225AA
包装说明ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
针数3
制造商包装代码77-09
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time10 weeks
最大集电极电流 (IC)4 A
集电极-发射极最大电压100 V
配置DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)750
JEDEC-95代码TO-225AA
JESD-30 代码R-PSFM-T3
JESD-609代码e3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)260
极性/信道类型PNP
最大功率耗散 (Abs)40 W
认证状态Not Qualified
表面贴装NO
端子面层Tin (Sn)
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间40
晶体管应用AMPLIFIER
晶体管元件材料SILICON
Base Number Matches1

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BD676G,
BD678G,
BD680G,
BD682G,
BD676AG,
BD678AG,
BD680AG,
BD682TG
http://onsemi.com
Plastic Medium-Power
Silicon PNP Darlingtons
This series of plastic, medium−power silicon PNP Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
High DC Current Gain
Monolithic Construction
BD676, 676A, 678, 678A, 680, 680A, 682 are complementary
with BD675, 675A, 677, 677A, 679, 679A, 681
BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BD676G, BD676AG
BD678G, BD678AG
BD680G, BD680AG
BD682G, BD682TG
Collector-Base Voltage
BD676G, BD676AG
BD678G, BD678AG
BD680G, BD680AG
BD682G, BD682TG
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
45
60
80
100
V
CB
45
60
80
100
V
EB
I
C
I
B
P
D
40
0.32
T
J
, T
stg
−55 to +150
W
W/°C
°C
5.0
4.0
0.1
Vdc
Adc
Adc
Vdc
Value
Unit
Vdc
4.0 AMP DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLT, 40 WATT
COLLECTOR 2, 4
BASE 3
EMITTER 1
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAMS
YWW
BD6xxG
YWW
BD6xxAG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Y
= Year
WW
= Work Week
BD6xx = Device Code
xx = 76, 78, 80, 82, or 82T
G
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
R
qJC
Max
3.13
Unit
°C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 14
Publication Order Number:
BD676/D

BD682G相似产品对比

BD682G BD678G BD680G
描述 Darlington Transistors 4A 100V 40W PNP Darlington Transistors 4A 60V Bipolar Power PNP Darlington Transistors 4A 80V Bipolar Power PNP
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅 不含铅
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) -
零件包装代码 TO-225AA TO-225AA TO-225AA
包装说明 ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN FLANGE MOUNT, R-PSFM-T3
针数 3 3 3
制造商包装代码 77-09 77-09 77-09
Reach Compliance Code compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99
Factory Lead Time 10 weeks 4 weeks 1 week
最大集电极电流 (IC) 4 A 4 A 4 A
集电极-发射极最大电压 100 V 60 V 80 V
配置 DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE) 750 750 750
JEDEC-95代码 TO-225AA TO-225AA TO-225AA
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609代码 e3 e3 e3
元件数量 1 1 1
端子数量 3 3 3
最高工作温度 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) 260 260 260
极性/信道类型 PNP PNP PNP
最大功率耗散 (Abs) 40 W 40 W 40 W
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO
端子面层 Tin (Sn) Tin (Sn) Matte Tin (Sn) - annealed
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 40 40 40
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON
Base Number Matches 1 1 1

 
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