d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 62849
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
S13-1160-Rev. A, 13-May-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Symbol
R
thJA
Typical
20
2
Maximum
25
2.5
Unit
SiR664DP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t
p
= 100 µs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5 A
0.76
29
19
14
15
T
C
= 25 °C
60
150
1.1
55
35
A
V
ns
nC
ns
C
iss
C
oss
C
rss
V
DS
= 30 V, V
GS
= 10 V, I
D
= 10 A
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 3
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 30 V, R
L
= 3
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 30 V, V
GS
= 0 V
f = 1 MHz
0.5
V
DS
= 30 V, V
GS
= 6 V, I
D
= 10 A
V
DS
= 30 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 30 V, V
GS
= 0 V, f = 1 MHz
1750
720
60
26
16
12
5
3.2
29
1.7
10
12
24
7
34
95
20
8
45
3
20
24
48
14
68
190
40
16
ns
40
24
18
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 6 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V, I
D
= 20 A
30
0.0050
0.0060
0.0073
70
0.0060
0.0075
0.0095
S
1.3
60
103
- 5.5
2.5
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 62849
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
S13-1160-Rev. A, 13-May-13
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR664DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
150
V
GS
= 10 V thru 5 V
120
I
D
- Drain Current (A)
100
80
I
D
- Drain Current (A)
90
V
GS
= 4 V
60
T
C
= 25
°C
40
60
30
V
GS
= 3 V
0
0
1
2
3
4
V
DS
- Drain-to-Source Voltage (V)
20
T
C
= 125
°C
V
GS
= 2 V
5
0
0.0
1.0
2.0
3.0
T
C
= - 55
°C
4.0
5.0
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.0100
Transfer Characteristics
2000
C
iss
0.0090
R
DS(on)
- On-Resistance (Ω)
1600
C - Capacitance (pF)
V
GS
= 4.5 V
0.0080
1200
C
oss
800
0.0070
V
GS
= 6.0 V
0.0060
V
GS
= 10 V
0.0050
400
C
rss
0.0040
0
20
40
60
80
100
0
0
12
24
36
48
60
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
I
D
= 10 A
8
R
DS(on)
- On-Resistance (Normalized)
2.0
I
D
= 20 A
1.7
V
GS
= 10 V
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 30 V
6
V
DS
= 20 V
4
V
DS
= 40 V
1.4
1.1
V
GS
= 4.5 V
2
0.8
0
0
6
12
18
24
30
Q
g
- Total Gate Charge (nC)
0.5
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62849
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
S13-1160-Rev. A, 13-May-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR664DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.025
10
I
S
- Source Current (A)
1
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
0.020
I
D
= 20 A
0.015
0.1
0.010
T
J
= 125
°C
0.01
0.005
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.5
350
On-Resistance vs. Gate-to-Source Voltage
0.2
280
V
GS(th)
- Variance (V)
I
D
= 5 mA
- 0.4
I
D
= 250 μA
- 0.7
Power (W)
- 0.1
210
140
70
- 1.0
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
1000
I
DM
Limited
100
I
D
- Drain Current (A)
I
D
Limited
10
Single Pulse Power, Junction-to-Ambient
100 us
1 ms
1
Limited by R
DS(on)
*
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
1s
10 s
BVDSS Limited
DC
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 62849
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
S13-1160-Rev. A, 13-May-13
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR664DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
75
60
I
D
- Drain Current (A)
Package Limited
45
30
15
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
60
2.5
48
2.0
Power (W)
24
Power (W)
36
1.5
1.0
12
0.5
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62849
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
S13-1160-Rev. A, 13-May-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
