SKP15N60
SKW15N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
75% lower
E
off
compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
PG-TO-220-3-1
- parallel switching capability
(TO-220AB)
Very soft, fast recovery anti-parallel Emitter Controlled
Diode
Pb-free lead plating; RoHS compliant
1
Qualified according to JEDEC for target applications
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
SKP15N60
SKW15N60
V
CE
600V
600V
I
C
15A
15A
V
CE(sat)
2.3V
2.3V
T
j
150C
150C
Marking
Package
K15N60 PG-TO-220-3-1
K15N60 PG-TO-247-3
1
J-STD-020 and JESD-022
1
Rev. 2.4
12.06.2013
SKP15N60
SKW15N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25C
T
C
= 100C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
600V,
T
j
150C
Diode forward current
T
C
= 25C
T
C
= 100C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
Power dissipation
T
C
= 25C
Operating junction and storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
T
j
,
T
stg
T
s
-55...+150
260
C
°C
2
Symbol
V
CE
I
C
Value
600
31
15
Unit
V
A
I
Cpul s
-
I
F
62
62
31
15
I
Fpul s
V
GE
t
SC
P
tot
62
20
10
139
V
s
W
V
GE
= 15V,
V
CC
600V,
T
j
150C
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.4
12.06.2013
SKP15N60
SKW15N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
thJA
PG-TO-220-3-1
PG-TO-247-3-1
62
40
R
thJCD
1.7
R
thJC
0.9
K/W
Symbol
Conditions
Max. Value
Unit
Electrical Characteristic,
at
T
j
= 25
C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 5 00
A
V
CE(sat)
V
G E
= 15 V ,
I
C
= 15 A
T
j
=2 5
C
T
j
=1 5 0 C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 1 5 A
T
j
=2 5
C
T
j
=1 5 0 C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 40 0
A
,
V
C E
=
V
G E
V
C E
= 60 0 V,
V
G E
= 0 V
T
j
=2 5
C
T
j
=1 5 0 C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
Symbol
Conditions
Value
min.
600
1.7
-
1.2
-
3
-
-
-
3
-
-
-
-
-
-
-
Typ.
-
2
2.3
1.4
1.25
4
-
-
-
10.9
800
84
52
76
7
13
150
max.
-
2.4
2.8
1.8
1.65
5
Unit
V
A
40
2000
100
-
960
101
62
99
-
-
-
A
nC
nH
nA
S
pF
I
GES
g
fs
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 15 A
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 48 0 V,
I
C
=1 5 A
V
G E
= 15 V
PG-TO-220-3-1
PG-TO-247-3-21
V
G E
= 15 V ,t
S C
10
s
V
C C
6 0 0 V,
T
j
1 5 0 C
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
3
Rev. 2.4
12.06.2013
SKP15N60
SKW15N60
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
C
,
V
R
= 2 00 V ,
I
F
= 1 5 A,
d i
F
/ d t
=2 0 0 A/
s
-
-
-
-
-
-
279
28
254
390
5.0
180
-
-
-
-
-
-
nC
A
A/s
ns
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
C
,
V
C C
= 40 0 V,
I
C
= 1 5 A,
V
G E
= 0/ 15 V ,
R
G
= 21
,
1)
L
= 18 0 nH ,
1)
C
= 25 0 pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
32
23
234
46
0.30
0.27
0.57
38
28
281
55
0.36
0.35
0.71
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Q
rr
I
rrm
d i
r r
/d t
T
j
=1 5 0 C
V
R
= 2 00 V ,
I
F
= 1 5 A,
d i
F
/ d t
=2 0 0 A/
s
-
-
-
-
-
-
360
40
320
1020
7.5
200
-
-
-
-
-
-
nC
A
A/s
ns
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 5 0 C
V
C C
= 40 0 V,
I
C
= 1 5 A,
V
G E
= 0/ 15 V ,
R
G
= 21
,
1)
L
= 18 0 nH ,
1)
C
= 25 0 pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
31
23
261
54
0.45
0.41
0.86
38
28
313
65
0.54
0.53
1.07
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
1)
Leakage inductance
L
a nd Stray capacity
C
due to dynamic test circuit in Figure E.
4
Rev. 2.4
12.06.2013
SKP15N60
SKW15N60
80A
100A
I
c
70A
60A
t
p
=5
s
15
s
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
10A
50
s
50A
40A
30A
T
C
=110°C
20A
10A
0A
10Hz
T
C
=80°C
200
s
1A
1ms
I
c
DC
0.1A
1V
10V
100V
1000V
100Hz
1kHz
10kHz
100kHz
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
150C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 21)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25C,
T
j
150C)
35A
140W
30A
120W
P
tot
,
POWER DISSIPATION
100W
80W
60W
40W
20W
0W
25°C
I
C
,
COLLECTOR CURRENT
25A
20A
15A
10A
5A
0A
25°C
50°C
75°C
100°C
125°C
50°C
75°C
100°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
150C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
15V,
T
j
150C)
5
Rev. 2.4
12.06.2013
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