DATA SHEET
dbook, halfpage
M3D123
BFG25AW; BFG25AW/X
NPN 5 GHz wideband transistors
Product specification
Supersedes data of August 1995
1998 Sep 23
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistors
FEATURES
Low current consumption
(100
A
to 1 mA)
Low noise figure
Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in UHF low
power amplifiers, such as pocket
telephones and paging systems.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
F
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
noise figure
T
s
85
C
I
C
= 0.5 mA; V
CE
= 1 V
I
C
= 0; V
CE
= 1 V; f = 1 MHz
I
C
= 0.5 mA; V
CE
= 1 V; f = 1 GHz; T
amb
= 25
C
s
½
opt
; I
C
= 1 mA; V
CE
= 1 V; f = 1 GHz
open emitter
open base
CONDITIONS
MIN.
50
PINNING
PIN
BFG25AW
1
2
3
4
collector
base
emitter
emitter
1
BFG25AW;
BFG25AW/X
DESCRIPTION
lfpage
4
3
2
MBK523
Top view
BFG25AW/X
1
2
3
4
collector
emitter
base
emitter
MARKING
TYPE NUMBER
BFG25AW
BFG25AW/X
CODE
N6
V1
Fig.1 SOT343N.
TYP. MAX. UNIT
80
0.2
5
16
2
8
5
6.5
500
200
0.3
pF
GHz
dB
dB
V
V
mA
mW
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz; T
amb
= 25
C
3.5
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
1998 Sep 23
2
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
85
C;
see Fig.2; note 1
open base
open collector
CONDITIONS
open emitter
65
MIN.
8
5
2
6.5
500
+150
175
MAX.
UNIT
V
V
V
mA
mW
C
C
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
re
f
T
G
UM
PARAMETER
collector-base breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
CONDITIONS
I
C
= 100
A;
I
E
= 0
I
E
= 100
A;
I
C
= 0
PARAMETER
BFG25AW; BFG25AW/X
CONDITIONS
VALUE
180
UNIT
K/W
thermal resistance from junction to soldering point T
s
85
C;
note 1
MIN.
50
3.5
TYP.
80
0.2
5
16
8
1.9
2
MAX.
8
5
2
50
200
0.3
UNIT
V
V
V
nA
pF
GHz
dB
dB
dB
dB
collector-emitter breakdown voltage I
C
= 1 mA; I
B
= 0
open emitter; V
CB
= 5 V; I
E
= 0
I
C
= 0.5 mA; V
CE
= 1 V
I
C
= 0; V
CE
= 1 V; f = 1 MHz
I
C
= 1 mA; V
CE
= 1 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 0.5 mA; V
CE
= 1 V;
f = 1 GHz; T
amb
= 25
C
I
C
= 0.5 mA; V
CE
= 1 V;
f = 2 GHz; T
amb
= 25
C
F
noise figure
s
½
opt
; I
C
= 0.5 mA; V
CE
= 1 V;
f = 1 GHz
s
½
opt
; I
C
= 1 mA; V
CE
= 1 V;
f = 1 GHz
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero. G
UM
S
21 2
---------------------------------------------------------- dB.
=
10 log
1
–
S
11 2
1
–
S
22 2
1998 Sep 23
3
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
handbook, halfpage
600
MBG248
handbook, halfpage
100
MCD138
P tot
(mW)
400
h FE
80
60
40
200
20
0
0
50
100
150
T s (
o
C)
200
0
10
3
10
2
10
1
1
I C (mA)
10
V
CE
= 1 V.
Fig.3
Fig.2 Power derating curve.
DC current gain as a function of collector
current; typical values.
handbook, halfpage
0.3
MLB971
handbook, halfpage
6
MLB972
Cre
(pF)
0.2
fT
(GHz)
4
0.1
2
0
0
2
4
VCE (V)
6
0
0
1
2
3 I (mA) 4
C
I
C
= 0; f = 1 MHz.
f = 500 MHz; V
CE
= 1 V; T
amb
= 25
C.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
1998 Sep 23
4
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
handbook, halfpage
30
MLB973
handbook, halfpage
30
MLB974
gain
(dB)
20
G UM
MSG
gain
(dB)
20
G UM
MSG
10
10
0
0
1
0
2
I C (mA)
3
0
1
2
I C (mA)
3
f = 500 MHz; V
CE
= 1 V.
f = 1 GHz; V
CE
= 1 V.
Fig.6
Gain as a function of collector current;
typical values.
Fig.7
Gain as a function of collector current;
typical values.
handbook, halfpage
50
MLB975
gain
(dB)
handbook, halfpage
50
MLB976
gain
(dB)
40
G UM
40
G UM
30
MSG
20
30
MSG
20
10
10
0
10
10
2
10
3
f (MHz)
10
4
0
10
10
2
10
3
f (MHz)
10
4
I
C
= 0.5 mA; V
CE
= 1 V.
I
C
= 1 mA; V
CE
= 1 V.
Fig.8
Gain as a function of frequency;
typical values.
Fig.9
Gain as a function of frequency;
typical values.
1998 Sep 23
5
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