End of Life. Last Available Purchase Date is 31-Dec-2014
Si9910
Vishay Siliconix
Adaptive Power MOSFET Driver
1
FEATURES
dv/dt and di/dt Control
Undervoltage Protection
Short-Circuit Protection
t
rr
Shoot-Through Current Limiting
Low Quiescent Current
CMOS Compatible Inputs
Compatible with Wide Range of MOSFET Devices
Bootstrap and Charge Pump Compatible
(High-Side Drive)
DESCRIPTION
The Si9910 Power MOSFET driver provides optimized gate
drive signals, protection circuitry and logic level interface. Very
low quiescent current is provided by a CMOS buffer and a
high-current emitter-follower output stage. This efficiency
allows operation in high-voltage bridge applications with
“bootstrap” or “charge-pump”
floating power supply
techniques.
The non-inverting output configuration minimizes current
drain for an n-channel “on” state. The logic input is internally
diode clamped to allow simple pull-down in high-side drives.
Fault protection circuitry senses an undervoltage or output
short-circuit condition and disables the power MOSFET.
Addition of one external resistor limits maximum di/dt of the
external Power MOSFET. A fast feedback circuit may be used
to limit shoot-through current during t
rr
(diode reverse recovery
time) in a bridge configuration.
The Si9910 is available in both standard and lead (Pb)-free
8-pin plastic DIP and SOIC packages which are specified to
operate over the industrial temperature range of −40 C to
85 C.
FUNCTIONAL BLOCK DIAGRAM
R3
V
DS
*100 k
V
DD
DRAIN
Undervoltage/
Overcurrent
Protection
C1
*2 to 5 pF
PULL-UP
R2
*250
2- s
Delay
INPUT
PULL-DOWN
I
SENSE
R1
*0.1
V
SS
* Typical Values
1. Patent Number 484116.
Document Number: 70009
S-42043—Rev. H, 15-Nov-04
www.vishay.com
1
Si9910
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V
SS
Pin
V
DD
Supply Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−0.3
V to 18 V
Pin 1, 4, 5, 7, 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−0.3
V to V
DD
+ 0.3 V
Pin 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−0.7
V to V
DD
+ 0.3 V
Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
"20
mA
Peak Current (I
pk
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−65
to 150_C
Notes
a. Device mounted with all leads soldered or welded to PC board.
b. Derate 5.6 mW/_C above 25_C.
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−40
to 85_C
Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150_C
Power Dissipation (Package)
a
8-Pin SOIC (Y Suffix)
b
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700 mW
8-Pin Plastic DIP (J Suffix)
b
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700 mW
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
Parameter
Input
High Level Input Voltage
Low Level Input Voltage
Input Voltage Hysteresis
High Level Input Current
Low Level Input Current
V
IH
V
IL
V
h
I
IH
I
IL
V
IN
= V
DD
V
IN
= 0 V
0.90
0.70 x V
DD
7.4
6.0
2.0
0.35 x V
DD
3.0
"1
"1
mA
V
Limits
Min
c
Typ
b
Max
c
Unit
Symbol
V
DD
10.8 V to 16.5 V
T
A
= OperatingTemperature Range
Output
High Level Output Voltage
Low Level Output Voltage
Undervoltage Lockout
I
SENSE
Pin Threshold
Voltage Drain-Source Maximum
Input Current for V
DS
Input
Peak Output Source Current
Peak Output Sink Current
V
OH
V
OL
V
UVLO
V
TH
V
DS
I
VDS
I
OS+
I
OS−
Max I
S
= 2 mA, Input High
100 mV Change on Drain
Input High
I
OH
=
−200
mA
I
OL
= 200 mA
8.3
0.5
8.3
V
DD
−3
10.7
1.3
9.2
0.66
9.1
12
1
−1
3
10.6
0.8
10.2
20.0
mA
A
V
Supply
Supply Range
Supply Current
V
DD
I
DD1
I
DD2
Output High, No Load
Output Low, No Load
10.8
0.1
100
16.5
1
500
V
mA
Dynamic
Propagation Delay Time Low to High Level
Propagation Delay Time High to Low Level
Rise Time
Fall Time
Overcurrent Sense Delay (V
DS
)
Input Capacitance
t
PLH
t
PHL
t
r
t
f
t
DS
C
in
C
L
= 2000 pF
120
135
50
35
1
5
mS
pF
ns
Notes
a. Refer to PROCESS OPTION FLOWCHART for additional information.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
www.vishay.com
Document Number: 70009
S-42043—Rev. H, 15-Nov-04
2
Si9910
Vishay Siliconix
PIN DESCRIPTION
Pin 1: V
DS
Pin 1 or V
DS
is a sense input for the maximum source-drain
voltage limit. Two microseconds after a high transition on input
pin 2, an internal timer enables the V
DS(max)
sense circuitry. A
catastrophic overcurrent condition, excessive on-resistance,
or insufficient gate-drive voltage can be sensed by limiting
the maximum voltage drop across the power MOSFET. An
external resistor (R3) is required to protect pin 1 from
overvoltage during the MOSFET “off” condition. Exceeding
V
DS(max)
latches the Si9910 “off.” Drive is re-enabled on the
next positive- going input on pin 2. If pin 1 is not used, it must
be connected to pin 6 (V
SS
).
Pin 2: INPUT
A non-inverting, Schmidt trigger input controls the state of the
MOSFET gate-drive outputs and enables the protection logic.
When the input is low (v V
IL
), V
DD
is monitored for an
undervoltage condition (insufficiently charged bootstrap
capacitor). If an undervoltage (v V
DD(min)
) condition exists,
the driver will ignore a turn-on input signal. An undervoltage
(v V
DD(min)
) condition during an “on” state will not be sensed.
“floating”
applications
(half-bridge, high-side)
and
ground-referenced applications (half-bridge, low-side).
Pin 7: PULL-DOWN
Pin 8: PULL-UP
Pull-up and pull-down outputs collectively provide the power
MOSFET gate with charging and discharging currents. Turn
“on” or “off” di/dt can be limited by adding resistance (R
2
) in
series with the appropriate output.
APPLICATIONS
“Floating” High-Side Drive Applications
As demonstrated in Figure 1, the Si9910 is intended for use
as both a ground-referenced gate driver and as a “high-side”
or source-referenced gate driver in half-bridge applications.
Several features of the Si9910 permit its use in half-bridge
high-side drive applications.
A simple and inexpensive method of isolating a floating supply
to power the Si9910 in high-side driver applications had to be
provided. Therefore, the Si9910 was designed to be
compatible with two of the most commonly used floating
supply techniques: the bootstrap and the charge pump. Both
of these techniques have limitations when used alone. A
properly designed bootstrap circuit can provide
low-impedance drive which minimizes transition losses and
the charge pump circuit provides static operation.
The Si9910 is configured to take advantage of either floating
supply technique if the application is not sensitive to their
particular limitations, or both techniques if switching losses
must be minimized and static operation is necessary. The
schematic above illustrates both the charge pump and
bootstrap circuits used in conjunction with an Si9910 in a
high-side driver application.
Input signal level shifting is accomplished with a passive
pull-up (R4) and n-channel MOSFET (Q2) for pull-down in
applications below 500 V. Total node capacitance defines the
value of R4 needed to guarantee an input transition rate which
safely exceeds the maximum dv/dt rate of the output
half-bridge. Using level-shift devices with higher current
capabilities may necessitate the addition of current-limiting
components such as R5.
Bootstrap Undervoltage Lockout
When using a bootstrap capacitor as a high-side floating
supply, care must be taken to ensure time is available to
recharge the bootstrap capacitor prior to turn-on of the
high-side MOSFET. As a catastrophic protection against
abnormal conditions such as start-up, loss of power, etc., an
internal voltage monitor has been included which monitors the
bootstrap voltage when the Si9910 is in the low state. The
Si9910 will not respond to a high input signal until the voltage
on the bootstrap capacitor is sufficient to fully enhance the
power MOSFET gate. For more details, please refer to
Application Note AN705.
Document Number: 70009
S-42043—Rev. H, 15-Nov-04
Pin 3: V
DD
V
DD
supplies power for the driver’s internal circuitry and
charging current for the power MOSFET’s gate capacitance.
The Si9910 minimizes the internal I
DD
in the “on” state
(gate-drive outputs high) allowing a “floating” power supply to
be provided by charge pump or bootstrap techniques.
Pin 4: DRAIN
Drain is an analog input to the internal dv/dt limiting circuitry.
An external capacitor (C1) must be used to protect the input
from exposure to the high-voltage (“off” state) drain and to set
the power MOSFET’s maximum rate of dv/dt. If dv/dt feedback
is not used, pin 4 must be left open.
Pin 5: I
SENSE
I
SENSE
in combination with an external resistor (R
1)
protects the power MOSFET from potentially catastrophic
peak currents. I
SENSE
is an analog feedback that limits current
during the power MOSFET’s transition to an “on” state. It is
intended to protect power MOSFETs (in a half-bridge
arrangement) from “shoot-through” current, resulting from
excess di/dt and t
rr
of flyback diodes or from logic timing
overlap. An 0.8-V drop across (R1) should indicate a current
level that is approximately four times the maximum allowable
load current. When the I
SENSE
input is not used, it should be
tied to pin 6 (V
SS
).
Pin 6: V
SS
V
SS
is the driver’s ground return pin. The applications diagram
illustrates the connection of V
SS
for source-referenced
www.vishay.com
4
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
