SGA5586ZDC
to 4000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA5586Z
Package: SOT-86
DC to 4000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Product Description
The SGA5586Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high F
T
and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
Features
Gain & Return Loss vs. Frequency
24
GAIN
V
D
= 3.3 V, I
D
= 60 mA (Typ.)
D
-20
-30
-40
6
1
2
3
4
Frequency (GHz)
18
Gain (dB)
ORL
-10
Return Loss (dB)
12
IRL
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
6
0
0
N
Parameter
Small Signal Gain
FO
R
Min.
Specification
Typ.
23.1
18.7
17.3
18.1
15.8
31.6
28.8
4000
EW
5
ES
0
Max.
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>10dB
IG
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Output Power at 1dB Compression
Output Third Intercept Point
Bandwidth Determined by Return
Loss
Input Return Loss
12.2
dB
1950MHz
Output Return Loss
20.7
dB
1950MHz
Noise Figure
2.6
dB
1950MHz
Device Operating Voltage
3.5
3.9
4.2
V
Device Operating Current
54
60
66
mA
Thermal Resistance
97
°C/W
(Junction - Lead)
Test Conditions: V
S
=8V, I
D
=60mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=68Ω, T
L
=25°C, Z
S
=Z
L
=50Ω
N
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS20160224
O
T
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
N
High Gain: 18.7dB at
1950MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Condition
1 of 6
SGA5586Z
Absolute Maximum Ratings
Parameter
Max Device Current (I
D
)
Max Device Voltage (V
D
)
Max RF Input Power
Max Junction Temp (T
J
)
Operating Temp Range (T
L
)
Max Storage Temp
Rating
120
6
+16
+150
-40 to +85
+150
Unit
mA
V
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies
Parameter
Unit
OIP
3
vs. Frequency
V
D
= 3.9 V, I
D
= 60 mA
35
EW
Small Signal Gain
dB
26.0
24.7
23.1
18.7
Output Third Order Intercept Point
dBm
31.5
31.6
28.8
Output Power at 1dB Compression
dBm
18.3
18.1
15.8
Input Return Loss
dB
22.3
13.9
11.8
12.2
Output Return Loss
dB
19.8
18.6
18.8
20.7
Reverse Isolation
dB
27.7
27.4
27.0
23.4
Noise Figure
dB
2.5
2.5
2.6
Test Conditions: V
S
=8V, I
D
=60mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=75Ω, T
L
=25°C, Z
S
=Z
L
=50Ω
ES
0.5
1
100
MHz
500
MHz
IG
850
MHz
3
N
1950
MHz
2400
MHz
17.3
27.1
14.4
12.3
17.5
21.5
3.0
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
3500
MHz
14.8
D
10.6
14.2
17.5
P
1dB
vs. Frequency
V
D
= 3.9 V, I
D
= 60 mA
N
P
1dB
(dBm)
20
18
16
14
12
30
OIP
3
(dBm)
25
20
FO
T
L
=+25ºC
2.5
3
R
15
0
O
T
T
L
=+25ºC
10
0
1.5
2
Frequency (GHz)
2.5
3
0.5
1
1.5
2
Frequency (GHz)
N
Noise Figure vs. Frequency
V
D
= 3.9 V, I
D
= 60 mA
5
Noise Figure (dB)
4
3
2
1
0
0
0.5
1
1.5
2
Frequency (GHz)
T
L
=+25ºC
2.5
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS20160224
SGA5586Z
|
S
|
vs. Frequency
21
|
S
|
vs. Frequency
11
32
24
S
21
(dB)
V
D
= 3.9 V, I
D
= 60 mA (Typ.)
0
-10
S
11
(dB)
-20
-30
-40
V
D
= 3.9 V, I
D
= 60 mA (Typ.)
16
8
0
0
1
2
3
Frequency (GHz)
4
|
S
|
vs. Frequency
12
-10
-15
S
12
(dB)
-20
-25
V
D
= 3.9 V, I
D
= 60 mA (Typ.)
0
-10
-20
-30
-40
5
N
EW
S
22
(dB)
D
ES
IG
22
5
0
1
2
3
Frequency (GHz)
N
T
L
+25°C
-40°C
+85°C
T
L
4
+25°C
-40°C
+85°C
5
|
S
|
vs. Frequency
V
D
= 3.9 V, I
D
= 60 mA (Typ.)
T
L
-30
0
1
2
3
Frequency (GHz)
+25°C
-40°C
+85°C
T
L
0
1
2
3
Frequency (GHz)
4
+25°C
-40°C
+85°C
R
4
5
N
DS20160224
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
O
T
FO
3 of 6
SGA5586Z
Pin
1
2, 4
3
Function
RF IN
GND
RF OUT/BIAS
Description
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.
Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead
inductance.
RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper-
ation.
Application Schematic
Frequency (Mhz)
L
C
68 nH
IG
33 nH
1 uF
1000
pF
C
D
L
C
C
D
100 pF
68 pF
N
22 pF
22 nH
V
S
R
BIAS
Reference
Designator
500
850
1950
2400
3500
C
B
220 pF
100 pF
68 pF
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
RF in
C
B
4
1
SGA5586Z
3
2
C
B
RF out
Supply Voltage(V
S
)
ES
R
BIAS
Recommended Bias Resistor Values for I
D
=60mA
R
BIAS
=( V
S
-V
D
) / I
D
6V
8V
68
10 V
100
12 V
130
D
N
1 uF
1000 pF
36
Evaluation Board Layout
V
S
R
BIAS
FO
O
T
L
C
A55
R
C
D
C
B
C
B
N
4 of 6
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EW
Note: R
BIAS
provides DC bias stability over temperature.
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
DS20160224
SGA5586Z
Suggested Pad Layout
Package Drawing
N
DS20160224
O
T
FO
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
R
N
EW
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
D
ES
IG
5 of 6
N
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