TSM7N65
650V N-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
650
1.2 @ V
GS
=10V
I
D
(A)
6.4
General Description
Features
●
●
●
●
Low R
DS(ON)
1.2Ω (Max.)
Low gate charge typical @ 32nC (Typ.)
Low Crss typical @ 25pF (Typ.)
Fast Switching
Ordering Information
Part No.
TSM7N65CZ C0
TSM7N65CI C0
e co
Package
TO-220
ITO-220
mm
Packing
50pcs / Tube
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating
(T
A
=25
o
C unless otherwise noted)
Parameter
Symbol
V
DS
V
GS
Ta =25ºC
Ta =100ºC
I
D
I
DM
E
AS
I
AR
TO-220
ITO-220
P
TOT
T
J
T
STG
tR
en
1/9
The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp
ballast based on half bridge.
de
Limit
650
±30
6.4
3.8
22
216
6
125
30
150
-55 to +150
d
Block Diagram
Unit
V
V
A
A
A
mJ
A
W
ºC
o
Drain-Source Voltage
Gate-Source Voltage
No
Continuous Drain Current
Pulsed Drain Current *
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Total Power Dissipation @ T
C
= 25 C
Operating Junction Temperature
Storage Temperature Range
*
Limited by maximum junction temperature
o
C
Version: D12
TSM7N65
650V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Note:
Surface mounted on FR4 board t
≤
10sec
TO-220
ITO-220
Symbol
RӨ
JC
RӨ
JA
Limit
1.0
4.2
62.5
Unit
o
C/W
o
C/W
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transfer Conductance
Diode Forward Voltage
Dynamic
Total Gate Charge
V
GS
= 0V, I
D
= 250uA
V
GS
= 10V, I
D
= 3A
de
BV
DSS
650
--
--
2.0
--
R
DS(ON)
V
GS(TH)
I
DSS
1.0
--
--
--
--
3.7
--
32
6
11
905
115
25
14
14
47
19
638
4.8
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
I
GSS
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
t
fr
Conditions
Symbol
d
Min
Typ
Max
--
1.2
4.0
1
50
±10
--
1.6
46
--
--
--
--
--
--
--
--
--
--
--
Unit
V
Ω
V
uA
uA
S
V
V
DS
= V
GS
, I
D
= 250uA
V
DS
= 650V, V
GS
= 0V
T
C
=125ºC
e co
mm
V
DS
= 650V, V
GS
= 0V,
V
GS
= ±20V, V
DS
= 0V
V
DS
= 8V, I
D
= 1A
I
S
= 6A, V
GS
= 0V
V
DS
= 300V, I
D
= 6A,
V
GS
= 10V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
V
GS
= 10V, I
D
= 6A,
V
DD
= 300V, R
G
= 25Ω
V
GS
= 0V, I
S
= 6A,
2/9
en
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
nC
tR
Output Capacitance
Switching
pF
Reverse Transfer Capacitance
No
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Turn-Off Delay Time
nS
Reverse Recovery Time
nS
uC
dI
F
/dt = 100A/us
Reverse Recovery Charge
Q
fr
Note:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. V
DD
= 50V, I
AS
=3.6A, L=30mH, V
DS
=500V
3. Pulse test: pulse width
≤300uS,
duty cycle
≤2%
4. Essentially Independent of Operating Temperature
Version: D12
TSM7N65
650V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
mm
3/9
No
tR
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
e co
Version: D12
en
Gate Charge
de
d
TSM7N65
650V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area - TO-220
No
tR
e co
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/9
Version: D12
mm
en
Maximum Safe Operating Area - ITO-220
de
d
TSM7N65
650V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
No
E
AS
Test Circuit & Waveform
tR
5/9
e co
Version: D12
mm
en
de
d
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