EMD2 / UMD2N / IMD2A
General purpose (dual digital transistor)
Datasheet
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Outline
<For DTr1(NPN)>
Parameter
V
CC
I
C(MAX.)
R
1
R
2
<For DTr2(PNP)>
Value
50V
100mA
22kΩ
22kΩ
SOT-563
SOT-363
EMD2
(EMT6)
SOT-457
UMD2N
(UMT6)
Parameter
V
CC
I
C(MAX.)
R
1
R
2
Value
-50V
-100mA
22kΩ
22kΩ
IMD2A
(SMT6)
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Features
1)Both the DTA124E chip and DTC124E
chip in a EMT or UMT or SMT package.
2)Mounting possible with EMT3 or UMT3
or SMT3 automatic mounting machines.
3)Transistor elements are independent,
eliminating interference.
4)Mounting cost and area can be cut in half.
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Inner circuit
EMD2 / UMD2N
IMD2A
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Application
INVERTER, INTERFACE, DRIVER
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Packaging specifications
Part No.
EMD2
UMD2N
IMD2A
Package
SOT-563
(EMT6)
SOT-363
(UMT6)
SOT-457
(SMT6)
Package
size
1616
2021
2928
Taping
code
T2R
TR
T108
Basic
Reel size Tape width ordering
(mm)
(mm)
unit.(pcs)
180
180
180
8
8
8
8000
3000
3000
Marking
D2
D2
D2
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/9
20151030 - Rev.002
EMD2 / UMD2N / IMD2A
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Absolute maximum ratings
(T
a
= 25°C)
Datasheet
Parameter
Symbol DTr1(NPN) DTr2(PNP) Unit
V
CC
50
-50
V
V
IN
-10 to 40 -40 to 10
V
I
O
30
-30
mA
I
C(MAX)*1
100
-100
mA
P
D*2*3
150
mW/Total
P
D*2*4
300
T
j
150
℃
T
stg
-55 to +150
℃
Values
Typ.
-
-
100
-
-
-
22
1.0
250
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
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Electrical characteristics
(T
a
= 25°C) <For DTr1(NPN)>
EMD2/ UMD2N
IMD2A
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T*1
Conditions
V
CC
= 5V, I
O
= 100μA
V
O
= 0.2V, I
O
= 5mA
I
O
= 10mA, I
I
= 0.5mA
V
I
= 5V
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 5mA
-
-
V
CE
= 10V, I
E
= -5mA,
f = 100MHz
Min.
-
3.0
-
-
-
56
15.4
0.8
-
Max.
0.5
-
300
360
500
-
28.6
1.2
-
Unit
V
mV
μA
nA
-
kΩ
-
MHz
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Electrical characteristics
(T
a
= 25°C) <For DTr2(PNP)>
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T*1
Conditions
V
CC
= -5V, I
O
= -100μA
V
O
= -0.2V, I
O
= -5mA
I
O
= -10mA, I
I
= -0.5mA
V
I
= -5V
V
CC
= -50V, V
I
= 0V
V
O
= -5V, I
O
= -5mA
-
-
V
CE
= -10V, I
E
= 5mA,
f = 100MHz
Min.
-
-3.0
-
-
-
56
15.4
0.8
-
Values
Typ.
-
-
-100
-
-
-
22
1.0
250
Max.
-0.5
-
-300
-360
-500
-
28.6
1.2
-
Unit
V
mV
μA
nA
-
kΩ
-
MHz
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference and.
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/9
20151030 - Rev.002
EMD2 / UMD2N / IMD2A
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Electrical characteristic curves(T
a
= 25°C)
<For DTR1(NPN)>
Datasheet
Fig.1 Input Voltage vs. Output Current
(ON Characteristics)
Fig.2 Output Current vs. Input Voltage
(OFF Characteristics)
Fig.3 Output Current vs. Output Voltage
Fig.4 DC Current Gain vs. Output Current
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/9
20151030 - Rev.002
EMD2 / UMD2N / IMD2A
l
Electrical characteristic curves(T
a
= 25°C)
<For DTR1(NPN)>
Datasheet
Fig.5 Output Voltage vs. Output Current
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
4/9
20151030 - Rev.002
EMD2 / UMD2N / IMD2A
l
Electrical characteristic curves(T
a
=25°C)
<For DTr2(PNP)>
Datasheet
Fig.1 Input Voltage vs. Output Current
(ON Characteristics)
Fig.2 Output Current vs. Input Voltage
(OFF Characteristics)
Fig.3 Output Current vs. Output Voltage
Fig.4 DC Current Gain vs. Output Current
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/9
20151030 - Rev.002
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